Mechanisms for supplying process gas into wafer process apparatus
Embodiments of mechanisms for processing a semiconductor wafer are provided. A method for processing a wafer includes providing a wafer process apparatus. The wafer process apparatus includes a chamber and a stage positioned in the chamber for supporting the semiconductor wafer. The method also includes supplying a process gas to the semiconductor wafer via a discharged assembly that is adjacent to the stage. The discharged assembly includes a discharged passage configured without a vertical flow path section.
1. A wafer process apparatus, comprising:
a chamber;
a susceptor module positioned in the chamber, wherein the susceptor module comprises a stage for supporting a semiconductor wafer and is rotatable about a rotation axis; and
a discharging assembly and a fluid outlet assembly positioned at two sides of the susceptor module, wherein the discharging assembly has a lateral surface adjacent to the stage and partially surrounding the rotation axis, and a plurality of openings are arranged on the lateral surface and configured for providing a process gas to the chamber, wherein the discharging assembly comprises a plurality of discharging passages connected to the openings, respectively, wherein each of the discharging passages is a step structure comprising an outer flow path section, a linearly sloped flow path section, and an inner flow path section, wherein the outer flow path section and the inner flow path section extend in a direction perpendicular to the rotation axis, and the linearly sloped flow path section extends at a downward angle from the outer flow path section to the inner flow path section,
and wherein the discharging assembly comprises:
a lower member having a first surface, wherein a groove is formed on the first surface and immediately connected to the lateral surface; and
an upper member having a second surface positioned higher than the first surface relative to the stage, wherein the upper member has a protruding portion positioned relative to the groove and projecting toward the groove from the second surface to define one of the discharging passages,
wherein a lower region of the lateral surface of the discharging assembly which corresponds to the lower member is closer to the stage than an upper region of the discharging assembly which corresponds to the upper member, and a flange is connected to the lower region of the lateral surface, wherein a bottom surface of the groove, the lower region of the lateral surface and an upper surface of the flange are arranged in order and form a step structure, wherein in the direction of the rotation axis, the outer flow path section is higher than the inner flow path section, and the inner flow path section is higher than the upper surface of the flange at the same height as the stage.
2. The wafer process apparatus as claimed in claim 1 , wherein each of the discharging passages extends in a direction that is parallel to a traversal line that passes through the rotation axis;
wherein the lateral surface extends toward opposite sides of the transversal line and terminates at two ends;
wherein a distance between two ends of the lateral surface is equal to or greater than a width of the stage.
3. The wafer process apparatus as claimed in claim 2 , wherein two of the openings are respectively arranged adjacent to the two ends of the lateral surface.
4. The wafer process apparatus as claimed in claim 1 , wherein each of the discharging passages is configured without a flow path section that extends in a direction parallel to the rotation axis.
5. The wafer process apparatus as claimed in claim 1 , further comprising:
an interface passage connected to a first group of the discharging passages of the discharging assembly; and
a fluid passage connected to a second group of the discharging passages of the discharging assembly, wherein the fluid passage is disposed outside the interface passage and surrounding the interface passage, and
wherein a width of one of the first group of the discharging passages is smaller than the width of the interface passage, and a width of one of the second group of the discharging passages is smaller than the width of fluid passage.
6. The wafer process apparatus as claimed in claim 5 , wherein one end of the interface passage is fluidly connected to the first group of the discharging passages, and the other end of the interface passage is fluidly connected to a first gas inlet connector, and
wherein one end of the fluid passage is fluidly connected to the second group of the discharging passages, and the other end of the fluid passage is fluidly connected to a second gas inlet connector.
7. The wafer process apparatus as claimed in claim 5 , wherein the process gas passing through the interface passage is isolated from the process gas passing through the fluid passage.
8. The wafer process apparatus as claimed in claim 1 , further comprising a gas supplying module configured to supply a second process gas into the chamber via a gas line.
9. A wafer process apparatus, comprising:
a chamber;
a susceptor module positioned in the chamber, wherein the susceptor module comprises a stage for supporting a semiconductor wafer and is rotatable about a rotation axis;
a discharging assembly and a fluid outlet assembly positioned at two sides of the susceptor module, wherein the discharging assembly comprises a lateral surface adjacent to the stage and partially surrounding the rotation axis, and a plurality of openings are arranged on the lateral surface and configured to provide a process gas to the chamber, wherein a distance between two ends of the lateral surface is equal to or greater than a width of the stage which extends across the rotation axis, wherein a first group of the openings are arranged on a central region of the lateral surface, and a second group of the openings are arranged on two lateral regions of the lateral surface, the two lateral regions are respectively located between two sides of the central region and the two ends of the lateral surface,
wherein the discharging assembly comprises a plurality of discharging passages connected to the openings, respectively, and each of the discharging passages is a step structure comprising an outer flow path section, a linearly sloped section, and an inner flow path section, wherein the outer flow path section and the inner flow path section extend in a direction perpendicular to the rotation axis, and the linearly sloped flow path section extends at a downward angle from the outer flow path section the inner flow path section;
an interface passage connected to the first group of the openings through a first group of the discharging passages of the discharging assembly; and
a fluid passage connected to the second group of the openings through a second group of the discharging passages of the discharging assembly,
wherein the discharging assembly comprises:
a lower member having a first surface, wherein a groove is formed on the first surface and immediately connected to the lateral surface; and
an upper member having a second surface positioned higher than the first surface relative to the stage, wherein the upper member has a protruding portion positioned relative to the groove and projecting toward the groove from the second surface to define one of the discharging passages,
wherein a lower region of the lateral surface of the discharging assembly which corresponds to the lower member is closer to the stage than an upper region of the discharging assembly which corresponds to the upper member, and a flange is connected to the lower region of the lateral surface, wherein a bottom surface of the groove, the lower region of the lateral surface and an upper surface of the flange are arranged in order and form a step structure, wherein in the direction of the rotation axis, the outer flow path section is higher than the inner flow path section, and the inner flow path section is higher than the upper surface of the flange at the same height as the stage.
10. The wafer process apparatus as claimed in claim 9 , wherein each of the discharging passages extends in a direction that is parallel to a traversal line passing through the rotation axis, and the stage comprises two edge points arranged along a direction that is perpendicular to the traversal line, and the width of the stage is equal to the distance between the two edge points.
11. The wafer process apparatus as claimed in claim 9 , wherein the interface passage and the fluid passage are fluidly connected to the chamber through the discharging assembly.
12. The wafer process apparatus as claimed in claim 11 , wherein the plurality of discharging passages connecting both the fluid passage and the interface passage to the openings each is configured without a flow path section that extends in a direction parallel to the rotation axis.
13. The wafer process apparatus as claimed in claim 11 , wherein an inner wall of the interface passage intersects the discharging assembly at an acute angle when viewed along the direction of the rotation axis, and in a direction toward the discharging assembly, a width of the interface passage is increased to have a trapezoidal shape.
14. The wafer process apparatus as claimed in claim 13 , wherein an inner wall of the fluid passage intersects the discharging assembly at an acute angle when viewed along the direction of the rotation axis, and in a direction toward the discharging assembly, a width of the fluid passage is increased to have a trapezoidal shape, wherein the fluid passage is disposed outside the interface passage and surrounding the interface passage.
15. The wafer process apparatus as claimed in claim 9 , further comprising a gas supplying module configured to supply a second process gas into the chamber via a gas line;
wherein an intersection of the inner wall of the fluid passage and the discharging assembly is aligned with an outermost edge point of the stage and aligned with an end of the gas line.
16. A method for processing a semiconductor wafer, comprising:
providing a wafer process apparatus comprising a chamber and a stage positioned in the chamber for supporting the semiconductor wafer; and
supplying a process gas to the semiconductor wafer via a discharging assembly of the wafer process apparatus, wherein the discharging assembly has a lateral surface adjacent to the stage and partially surrounding a rotation axis of the stage, and a plurality of openings are arranged on the lateral surface and configured for providing the process gas to the chamber,
wherein the discharging assembly comprises a plurality of discharging passages connected to the openings, respectively, wherein each of the discharging passages is a step structure comprising an outer flow path section, a linearly sloped flow path section, and an inner flow path section, wherein the outer flow path section and the inner flow path section extend in a direction perpendicular to the rotation axis, and the linearly sloped flow path section extends at a downward angle from the outer flow path section to the inner flow path section so that the process gas from the discharging passages is directed downwardly to a plane at which the semiconductor wafer is located,
and wherein the discharging assembly comprises:
a lower member having a first surface, wherein a groove is formed on the first surface and immediately connected to the lateral surface; and
an upper member having a second surface positioned higher than the first surface relative to the stage, wherein the upper member has a protruding portion positioned relative to the groove and projecting toward the groove from the second surface to define one of the discharging passages,
wherein a lower region of the lateral surface of the discharging assembly which corresponds to the lower member is closer to the stage than an upper region of the discharging assembly which corresponds to the upper member, and a flange is connected to the lower region of the lateral surface, wherein a bottom surface of the groove, the lower region of the lateral surface and an upper surface of the flange are arranged in order and form a step structure, wherein in the direction of the rotation axis, the outer flow path section is higher than the inner flow path section, and the inner flow path section is higher than the upper surface of the flange at the same height as the stage.
17. The method as claimed in claim 16 , wherein each of the discharging passages extends in a direction that is parallel to a traversal line that passes through the rotation axis, and the process gas from the discharging assembly is supplied substantially along the transversal line;
wherein the lateral surface extends toward opposite sides of the transversal line and terminates at two ends;
wherein a distance between the two ends of the lateral surface is equal to or greater than a width of the stage.
18. The method as claimed in claim 16 , wherein each of the discharging passages is configured without a flow path section that extends in a direction parallel to the rotation axis.
19. The method as claimed in claim 16 , wherein the method further comprising rotating the stage about the rotation axis.
20. The method as claimed in claim 16 , further comprising:
supplying a second process gas from a gas supplying module into the chamber via a gas line.