Non-volatile memory that dynamically reduces the number of bits of data stored per memory cell
A non-volatile memory system reduces the number of bits of data per non-volatile memory cell for a block (or other grouping of non-volatile memory cells) in response to a failed memory operation, the block being subjected to more than a minimum number of programming cycles or other events. The reducing of the number of bits of data stored in the memory cells allows the useful life of the block to be extended.
1. A non-volatile storage apparatus, comprising:
a group of non-volatile memory cells; and
a control circuit connected to the non-volatile memory cells, the control circuit is configured to:
operate the group of non-volatile memory cells at a first number of bits of data per memory cell;
receive a command to perform a memory operation;
determine whether the group of non-volatile memory cells has undergone more than a minimum number of programming cycles;
in response to determining that the group of non-volatile memory cells has undergone more than the minimum number of programming cycles and the memory operation being a read process, perform the memory operation on the group of non-volatile memory cells at the first number of bits of data per memory cell; and
in response to determining that the group of non-volatile memory cells has undergone more than the minimum number of programming cycles and the memory operation being a programming process, convert the group of non-volatile memory cells to a second number of bits of data per memory cell and operate the group of non-volatile memory cells at the second number of bits of data per memory cell.
2. The non-volatile storage apparatus of claim 1 , wherein the control circuit is further configured to:
in response to determining that the group of non-volatile memory cells has undergone less than the minimum number of programming cycles:
perform the memory operation on the group of non-volatile memory cells at the first number of bits of data per memory cell; and
if the memory operation fails, convert the group of non-volatile memory cells to the second number of bits of data per memory cell.
3. The non-volatile storage apparatus of claim 1 , wherein the control circuit is further configured to:
in response to determining that the group of non-volatile memory cells has undergone less than the minimum number of programming cycles, perform the memory operation on the group of non-volatile memory cells at the first number of bits of data per memory cell.
4. The non-volatile storage apparatus of claim 1 , wherein
the control circuit is configured to maintain one or more mapping tables that indicate whether groups of non-volatile memory cells are being operated at the first number of bits of data per memory cell or at the second number of bits of data per memory cell.
5. The non-volatile storage apparatus of claim 1 , wherein:
the control circuit is configured to convert the group of non-volatile memory cells to the second number of bits of data per memory cell by verifying that the group of non-volatile memory cells can successfully erase, program and read at the second number of bits of data per memory cell.
6. The non-volatile storage apparatus of claim 5 , wherein:
the control circuit is configured to perform the verifying as a background process.
7. The non-volatile storage apparatus of claim 5 , wherein:
the control circuit is configured to mark the group of non-volatile memory cells as a bad group if the verification that the group of non-volatile memory cells can successfully erase, program and read at the second number of bits of data per memory cell fails.
8. The non-volatile storage apparatus of claim 1 , wherein:
the memory operation is a read operation; and
the control circuit is further configured to:
in response to determining that the group of non-volatile memory cells has undergone less than the minimum number of programming cycles:
perform the read operation on the group of non-volatile memory cells at the first number of bits of data per memory cell; and
if the read operation fails, convert the group of non-volatile memory cells to the second number of bits of data per memory cell.
9. The non-volatile storage apparatus of claim 1 , wherein:
the memory operation is a programming operation; and
the control circuit is further configured to:
in response to determining that the group of non-volatile memory cells has undergone less than the minimum number of programming cycles:
perform the programming operation on the group of non-volatile memory cells at the first number of bits of data per memory cell; and
if the programming operation fails, convert the group of non-volatile memory cells to the second number of bits of data per memory cell.
10. The non-volatile storage apparatus of claim 1 , wherein:
the memory operation is an erase operation; and
the control circuit is further configured to:
in response to determining that the group of non-volatile memory cells has undergone less than the minimum number of programming cycles:
perform the erase operation on the group of non-volatile memory cells at the first number of bits of data per memory cell; and
if the erase operation fails, convert the group of non-volatile memory cells to the second number of bits of data per memory cell.
11. The non-volatile storage apparatus of claim 1 , wherein:
the second number of bits of data per memory cell is smaller than the first number of bits of data per memory cell.
12. A non-volatile storage apparatus, comprising:
a block of non-volatile memory cells; and
a control circuit connected to the non-volatile memory cells, the control circuit comprises means for reducing a number of data bits stored in the block of non-volatile memory cells for a new memory operation in response to determining that the block of non-volatile memory cells has undergone more than a minimum number of programming cycles and the new memory operation is a programming operation, without reducing the number of data bits stored in the block of non-volatile memory cells for the new memory operation in response to determining that the block of non-volatile memory cells has undergone more than the minimum number of programming cycles and the new memory operation is a read operation, the control circuit is configured to operate the block of non-volatile memory cells before and after reducing the number of data bits stored in the block of non-volatile memory cells.
13. The non-volatile storage apparatus of claim 12 , wherein:
the control circuit further comprises means for reducing a number of data bits stored in the block of non-volatile memory cells in response to determining that a memory operation for the block of non-volatile memory cells failed.
14. The non-volatile storage apparatus of claim 12 , wherein:
the control circuit is configured to perform a read operation for the block of non-volatile memory cells before reducing the number of data bits stored in the block of non-volatile memory cells and after the block of non-volatile memory cells has undergone more than the minimum number of programming cycles.
15. A method of operating non-volatile storage, comprising:
receiving a command to perform a memory operation;
identifying a first block of non-volatile memory cells being operated at a first number of bits of data per memory cell;
determining that the first block of non-volatile memory cells has undergone less than a minimum number of programming cycles;
in response to determining that the first block of non-volatile memory cells has undergone less than the minimum number of programming cycles:
performing the memory operation on the first block of non-volatile memory cells at the first number of bits of data per memory cell, and
if the memory operation fails, converting the first block of non-volatile memory cells to a second number of bits of data per memory cell and operating the first block of non-volatile memory cells at the second number of bits of data per memory cell, the second number of bits of data per memory cell is less than the first number of bits of data per memory cell.
16. The method of claim 15 , further comprising:
in response to determining that the group of non-volatile memory cells has undergone more than the minimum number of programming cycles and the memory operation being a read process, performing the memory operation on the group of non-volatile memory cells at the first number of bits of data per memory cell.
17. The method of claim 16 , further comprising:
in response to determining that the group of non-volatile memory cells has undergone more than the minimum number of programming cycles and the memory operation being a programming process, converting the group of non-volatile memory cells to a second number of bits of data per memory cell and performing the memory operation on the group of non-volatile memory cells at the second number of bits of data per memory cell.