Granted Patent B2

US 12,464,863 · App. 18/629,555 · Granted Nov 4, 2025

Inventor: Petar Atanackovic (Henley Beach South, AU)

Assignee: Silanna UV Technologies Pte Ltd

H10H20/822H01L21/02178H01L21/02192H01L21/02194H01L21/0228H01L21/02458H01L21/02507H01L23/66H01S5/34H10D30/015H10D30/6755H10D62/80H10D62/8161H10D62/82H10D62/8503H10D64/691H10H20/01335H10H20/811H10H20/812H10H20/817H10H20/818H10H20/857H10H29/10H01L2223/6627H10D30/47H10D30/475

Abstract

Claims (27)

1 . A transistor, comprising:

a substrate comprising sapphire;

an epitaxial channel layer on the substrate, the epitaxial channel layer comprising α-Ga 2 O 3 with a first bandgap;

an epitaxial gate layer on the epitaxial channel layer, the epitaxial gate layer comprising an oxide material with a second bandgap, wherein the second bandgap is wider than the first bandgap; and

electrical contacts comprising:

a source electrical contact coupled to the epitaxial channel layer;

a drain electrical contact coupled to the epitaxial channel layer; and

a gate electrical contact coupled to the epitaxial gate layer.

2 . The transistor of claim 1 , wherein the oxide material comprises α-Al 2 O 3 .

3 . The transistor of claim 1 , wherein the oxide material comprises α-(Al x Ga 1-x ) 2 O 3 , wherein 0<x<1.

4 . The transistor of claim 1 , wherein the sapphire substrate comprises a crystal orientation in the A-plane, M-plane, or R-plane.

5 . The transistor of claim 1 , wherein the α-Ga 2 O 3 comprises n-type conductivity.

6 . The transistor of claim 1 , wherein the α-Ga 2 O 3 comprises p-type conductivity.

7 . The transistor of claim 6 , wherein the α-Ga 2 O 3 is doped p-type using Li.

8 . The transistor of claim 6 , wherein the α-Ga 2 O 3 is doped p-type using N.

9 . The transistor of claim 1 , further comprising a mesa structure comprising the epitaxial channel layer and the epitaxial gate layer.

10 . The transistor of claim 1 , further comprising an n-type or p-type epitaxial layer between the epitaxial gate layer and the gate electrical contact.

11 . The transistor of claim 10 , wherein the n-type or p-type epitaxial layer comprises α-Ga 2 O 3 .

12 . The transistor of claim 1 , wherein the epitaxial channel layer comprises a doping density and a thickness configured to provide a fully-depleted channel.

13 . The transistor of claim 1 , wherein the epitaxial channel layer further comprises an n-i-n structure, comprising a first n+ doped α-Ga 2 O 3 and a second n+ doped α-Ga 2 O 3 region arranged on either side of an α-Ga 2 O 3 channel region, and wherein the source electrical contact couples to the first n+ doped α-Ga 2 O 3 region and the drain electrical contact couples to the second n+ doped α-Ga 2 O 3 region.

14 . The transistor of claim 13 , wherein the α-Ga 2 O 3 channel region comprises a doping density and a lateral length configured to provide a fully-depleted channel.

15 . The transistor of claim 1 , wherein the source and drain electrical contacts further comprise regrown epitaxial oxide.

16 . The transistor of claim 15 , wherein the regrown epitaxial oxide comprises n+Ga 2 O 3 .

17 . The transistor of claim 1 , further comprising a superlattice between the sapphire substrate and the epitaxial channel layer, wherein the superlattice comprises a plurality of α-Al 2 O 3 layers and a plurality of α-Ga 2 O 3 layers.

18 . The transistor of claim 1 , further comprising a buried oxide layer and a buried ground plane, wherein the buried oxide layer and the buried ground plane are between the sapphire substrate and the epitaxial channel layer, wherein the buried oxide layer and the buried ground plane are configured to confine RF waves in RF planar circuits.

19 . The transistor of claim 18 , wherein the buried oxide layer comprises α-Al 2 O 3 and the buried ground plane comprises α-Ga 2 O 3 .

20 . A system comprising the transistor of claim 18 , coupled to an antenna array through an RF waveguide.

Assignments (2)

Continuity (6)

References Cited (239)