Semiconductor component having a SiC semiconductor body
A semiconductor component includes: a SiC semiconductor body; a trench extending from a first surface of the SiC semiconductor body into the SiC semiconductor body, the trench having a conductive connection structure, a structure width at a bottom of the trench, and a dielectric layer covering sidewalls of the trench; a shielding region along the bottom and having a central section which has a lateral first width; and a contact formed between the conductive connection structure and the shielding region. The conductive connection structure is electrically connected to a source electrode. In at least one doping plane extending approximately parallel to the bottom, a dopant concentration in the central section deviates by not more than 10% from a maximum value of the dopant concentration in the shielding region in the doping plane. The first width is less than the structure width and is at least 30% of the structure width.
1 . A semiconductor component, comprising:
a SiC semiconductor body;
a trench extending from a first surface of the SiC semiconductor body into the SiC semiconductor body, the trench having a conductive connection structure, a structure width at a bottom of the trench, and a dielectric layer covering sidewalls of the trench;
a shielding region formed in the SiC semiconductor body along the bottom, the shielding region having a central section which has a lateral first width; and
a contact formed between the conductive connection structure and the shielding region,
wherein the conductive connection structure is electrically connected to a source electrode,
wherein in at least one doping plane extending approximately parallel to the bottom, a dopant concentration in the central section deviates by not more than 10% from a maximum value of the dopant concentration in the shielding region in the doping plane,
wherein the first width is less than the structure width and is at least 30% of the structure width.
2 . The semiconductor component of claim 1 , wherein the doping plane connects laterally adjacent local maximum values of vertical dopant distributions in the shielding region.
3 . The semiconductor component of claim 1 , wherein the first width is less than a difference between the structure width and twice an average distance between the doping plane and the bottom.
4 . The semiconductor component of claim 1 , wherein a field dielectric in the trench has a sidewall section having a first layer thickness along a sidewall of the trench, and wherein the conductive connection structure has a second width at the bottom that is less than the difference between the structure width of the trench at the bottom and twice the first layer thickness.
5 . The semiconductor component of claim 4 , wherein the field dielectric has a bottom section having a second layer thickness along the bottom, wherein the second layer thickness is at most equal to the first layer thickness, and wherein the bottom section is formed in an outer section of the bottom between a part of the conductive connection structure and the shielding region.
6 . The semiconductor component of claim 1 , wherein a JFET partial region is formed in the SiC semiconductor body, wherein the JFET partial region and the shielding region form a unipolar junction, wherein the shielding region is formed between the trench and the JFET partial region, wherein the JFET partial region has a lateral fifth width along the unipolar junction, and wherein the fifth width is less than the first width.
7 . The semiconductor component of claim 1 , wherein the trench has a gate electrode and an isolation dielectric, wherein the gate electrode is formed between the first surface and the conductive connection structure, and wherein the isolation dielectric is formed between the gate electrode and the conductive connection structure.
8 . A semiconductor component, comprising:
a SiC semiconductor body;
a gate electrode structure extending from a first surface of the SiC semiconductor body into the SiC semiconductor body, the gate electrode structure having a conductive connection structure;
a shielding region formed in the SiC semiconductor body at a bottom of the conductive connection structure;
a contact formed between the conductive connection structure and the shielding region;
a source region along a sidewall of the gate electrode structure, the source region extending from the first surface into the SiC semiconductor body; and
a first load electrode above the first surface and electrically connected to the source region,
wherein the conductive connection structure is electrically connected to both the first load electrode and the shielding region,
wherein the shielding region has a central section which has a lateral first width, wherein in a doping plane extending approximately parallel to the bottom, a dopant concentration in the central section deviates by not more than 10% from a maximum value of the dopant concentration in the shielding region in the doping plane.
9 . The semiconductor component of claim 8 , wherein the doping plane connects laterally adjacent local maximum values of vertical dopant distributions in the shielding region.
10 . The semiconductor component of claim 8 , wherein the gate electrode structure has a structure width at the bottom, and wherein the first width is less than the structure width and is at least 30% of the structure width.
11 . The semiconductor component of claim 10 , wherein the first width is less than a difference between the structure width and twice an average distance between the doping plane and the bottom.
12 . The semiconductor component of claim 10 , wherein the gate electrode structure has a field dielectric, wherein the field dielectric has a sidewall section having a first layer thickness along the sidewall of the gate electrode structure, and wherein the conductive connection structure has a second width at the bottom that is less than the difference between the structure width of the gate electrode structure at the bottom and twice the first layer thickness.
13 . The semiconductor component of claim 12 , wherein the field dielectric has a bottom section having a second layer thickness along the bottom, wherein the second layer thickness is at most equal to the first layer thickness, and wherein the bottom section is formed in an outer section of the bottom between a part of the conductive connection structure and the shielding region.
14 . The semiconductor component of claim 8 , wherein a JFET partial region is formed in the SiC semiconductor body, wherein the JFET partial region and the shielding region form a unipolar junction, wherein the shielding region is formed between the gate electrode structure and the JFET partial region, wherein the JFET partial region has a lateral fifth width along the unipolar junction, and wherein the fifth width is less than the first width.
15 . The semiconductor component of claim 8 , wherein the gate electrode structure has a gate electrode and an isolation dielectric, wherein the gate electrode is formed between the first surface and the conductive connection structure, and wherein the isolation dielectric is formed between the gate electrode and the conductive connection structure.
16 . The semiconductor component of claim 15 , wherein an interlayer dielectric isolates the gate electrode from the first load electrode.
17 . The semiconductor component of claim 16 , wherein the first load electrode is electrically connected to the source region by a contact structure that extends from the first load electrode through an opening in the interlayer dielectric as far as or into the SiC semiconductor body.
18 . The semiconductor component of claim 8 , wherein during an avalanche breakdown, the conductive connection structure carries away charge carriers which pass a pn junction between the shielding region and a drift zone to the first load electrode.
19 . The semiconductor component of claim 8 , wherein in a reverse- biased state of the semiconductor component, a unipolar charge carrier current flows via a Schottky contact and the conductive connection structure to the first load electrode.