Semiconductor device including terminal electrodes
The semiconductor device includes a semiconductor layer which has a main surface, a switching device which is formed in the semiconductor layer, a first electrode which is arranged on the main surface and electrically connected to the switching device, a second electrode which is arranged on the main surface at an interval from the first electrode and electrically connected to the switching device, a first terminal electrode which has a portion that overlaps the first electrode in plan view and a portion that overlaps the second electrode and is electrically connected to the first electrode, and a second terminal electrode which has a portion that overlaps the second electrode in plan view and is electrically connected to the second electrode.
1 . A semiconductor device comprising:
a semiconductor layer which includes SiC, and which has a main surface;
a switching device which is formed in the semiconductor layer;
a first electrode which is arranged on the main surface and electrically connected to the switching device;
a second electrode which is arranged on the main surface at an interval from the first electrode in such a manner as to surround a periphery of the first electrode in plan view and electrically connected to the switching device;
a first terminal electrode which has a portion that overlaps the first electrode in plan view and a portion that overlaps the second electrode and is electrically connected to the first electrode; and
a second terminal electrode which has a portion that overlaps the second electrode in plan view and is electrically connected to the second electrode.
2 . The semiconductor device according to claim 1 ,
wherein the first electrode includes an electricity receiving portion, an electricity supplying portion, and a connecting portion, and
the electricity receiving portion, the electricity supplying portion, and the connecting portion are surrounded by the second electrode in plan view.
3 . The semiconductor device according to claim 2 ,
wherein the second terminal electrode is arranged such as to surround a periphery of the first terminal electrode.
4 . The semiconductor device according to claim 1 , further comprising:
a protective insulating layer which covers a boundary portion between the first terminal electrode and the second terminal electrode.
5 . The semiconductor device according to claim 4 ,
wherein the protective insulating layer is formed in a rectangular annular shape along the periphery of the first terminal electrode and entirely covers an outer peripheral portion of the semiconductor layer.
6 . The semiconductor device according to claim 5 , further comprising:
an end insulating layer that covers the semiconductor layer at the outer peripheral portion of the semiconductor layer.
7 . The semiconductor device according to claim 2 , further comprising:
a protective insulating layer which covers a boundary portion between the first terminal electrode and the second terminal electrode.
8 . The semiconductor device according to claim 7 ,
wherein the protective insulating layer is formed in a rectangular annular shape along the periphery of the first terminal electrode and entirely covers an outer peripheral portion of the semiconductor layer.
9 . The semiconductor device according to claim 8 , further comprising:
an end insulating layer that covers the semiconductor layer at the outer peripheral portion of the semiconductor layer.
10 . The semiconductor device according to claim 3 , further comprising:
a protective insulating layer which covers a boundary portion between the first terminal electrode and the second terminal electrode.
11 . The semiconductor device according to claim 10 ,
wherein the protective insulating layer is formed in a rectangular annular shape along the periphery of the first terminal electrode and entirely covers an outer peripheral portion of the semiconductor layer.
12 . The semiconductor device according to claim 11 , further comprising:
an end insulating layer that covers the semiconductor layer at the outer peripheral portion of the semiconductor layer.
13 . The semiconductor device according to claim 1 , further comprising:
a lower insulating layer which covers the semiconductor layer and has a contact hole; and
wherein the second electrode is electrically connected to the switching device via the contact hole, and has a first portion that is embedded in the contact hole and a second portion that is formed on the lower insulating layer,
the first portion includes tungsten or tungsten alloy, and
the second portion includes aluminum or aluminum alloy.
14 . The semiconductor device according to claim 2 , further comprising:
a lower insulating layer which covers the semiconductor layer and has a contact hole; and
wherein the second electrode is electrically connected to the switching device via the contact hole, and has a first portion that is embedded in the contact hole and a second portion that is formed on the lower insulating layer,
the first portion includes tungsten or tungsten alloy, and
the second portion includes aluminum or aluminum alloy.
15 . The semiconductor device according to claim 3 , further comprising:
a lower insulating layer which covers the semiconductor layer and has a contact hole; and
wherein the second electrode is electrically connected to the switching device via the contact hole, and has a first portion that is embedded in the contact hole and a second portion that is formed on the lower insulating layer,
the first portion includes tungsten or tungsten alloy, and
the second portion includes aluminum or aluminum alloy.