Electronic device and wiring structure thereof
An electronic device includes a substrate, a wiring structure, an oxide insulating layer and a nitride insulating layer. The wiring structure is disposed on the substrate and includes an outer metal layer and an inner metal layer. The outer metal layer contains no molybdenum. The inner metal layer disposed between the outer metal layer and the substrate contains molybdenum. The oxide insulating layer is disposed on the wiring structure and directly touches the outer metal layer. The nitride insulating layer is disposed on the oxide insulating layer, where the oxide insulating layer is positioned between the nitride insulating layer and the outer metal layer.
1 . An electronic device, comprising:
a substrate;
a wiring structure, disposed on the substrate, wherein the wiring structure is a multilayer structure and comprises:
an inner metal layer, disposed on the substrate, wherein the inner metal layer includes a first metal layer, a second metal layer, and a third metal layer directly stacked in order, wherein the first and third metal layers contain molybdenum and the second metal layer contains no molybdenum; and
an outer metal layer, directly stacked on the inner metal layer, wherein the outer metal layer contains no molybdenum;
an oxide insulating layer, disposed on the wiring structure and contacting the outer metal layer directly; and
a nitride insulating layer, disposed on the oxide insulating layer, wherein the oxide insulating layer is positioned between the nitride insulating layer and the outer metal layer.
2 . The electronic device of claim 1 , wherein the outer metal layer is an aluminum layer, a titanium layer or a tantalum layer.
3 . The electronic device of claim 1 , wherein the thickness of the outer metal layer is greater than or equal to 30 Å.
4 . The electronic device of claim 2 , wherein the thickness of the outer metal layer is greater than or equal to 30 Å.
5 . The electronic device of claim 1 , wherein the thickness of the outer metal layer ranges 30 Å and 300 Å.
6 . The electronic device of claim 2 , wherein the thickness of the outer metal layer ranges 30 Å and 300 Å.
7 . The electronic device of claim 1 , wherein the oxide insulating layer is a silicon oxide layer, and the nitride insulating layer is a silicon nitride layer.
8 . The electronic device of claim 1 , further comprising:
an inner wiring layer, disposed on the substrate and positioned between the substrate and the wiring structure.
9 . The electronic device of claim 8 , further comprising:
at least one insulating layer, covering the inner wiring layer, and positioned between the wiring structure and the inner wiring layer.
10 . The electronic device of claim 9 , further comprising:
a plurality of semiconductor layers, disposed on the at least one insulating layer, wherein the semiconductor layers and the inner wiring layer overlap, and the wiring structure covers each of the semiconductor layers partially and is electrically connected to the semiconductor layers.
11 . The electronic device of claim 10 , wherein each of the semiconductor layers is made of indium gallium zinc oxide.
12 . The electronic device of claim 1 , further comprising:
a plurality of bonding pads, disposed on the nitride insulating layer and electrically connected to the wiring structure.
13 . The electronic device of claim 1 , further comprising:
an imaging part, disposed on the nitride insulating layer; and
an opposite substrate, disposed on the imaging part.
14 . A wiring structure, disposed in an electronic device, wherein the electronic device comprises a substrate, and the wiring structure is disposed on the substrate and is a multilayer structure, wherein the wiring structure comprises:
an inner metal layer, disposed on the substrate, wherein the inner metal layer includes a first metal layer, a second metal layer, and a third metal layer directly stacked in order, wherein the first and third metal layers contain molybdenum and the second metal layer contains molybdenum; and
an outer metal layer, directly stacked on the inner metal layer, wherein the outer metal layer contains no molybdenum.
15 . The wiring structure of claim 14 , wherein the outer metal layer is an aluminum layer, a titanium layer or a tantalum layer.
16 . The wiring structure of claim 14 , wherein the thickness of the outer metal layer is greater than or equal to 30 Å.
17 . The wiring structure of claim 15 , wherein the thickness of the outer metal layer is greater than or equal to 30 Å.