Electronic device and manufacturing method thereof
The disclosure provides an electronic device and a manufacturing method thereof. The electronic device includes a package structure, a circuit structure, a bonding structure and an external element. The circuit structure is disposed on the package structure and is electrically connected to the package structure. The circuit structure has a recess. The bonding structure includes a first bonding pad and a second bonding pad. The second bonding pad is disposed in the recess, and the second bonding pad is disposed on the first bonding pad. The bonding structure is disposed between the circuit structure and the external element. The external element is electrically connected to the circuit structure through the bonding structure. A width of the first bonding pad is smaller than a width of the second bonding pad.
1 . An electronic device, comprising:
a package structure, comprising:
an electronic element;
a protective layer, surrounding the electronic element;
a first insulating layer, disposed on the electronic element and having a first opening; and
a second insulating layer, disposed on the first insulating layer and having a second opening;
a circuit structure, disposed on the package structure and electrically connected to the package structure, wherein the circuit structure has a recess;
a bonding structure, comprising a first bonding pad and a second bonding pad, wherein the first bonding pad is disposed in the recess, and the second bonding pad is disposed on the first bonding pad; and
an external element, wherein the bonding structure is disposed between the circuit structure and the external element, and the external element is electrically connected to the circuit structure through the bonding structure,
wherein a width of the first bonding pad is smaller than a width of the second bonding pad,
wherein the second insulating layer contacting a side surface of the first insulating layer through the first opening,
wherein the external element contacts the second bonding pad, and the external element and the circuit structure are separated from each other,
wherein the first bonding pad and second bonding pad comprise solder ball.
2 . The electronic device according to claim 1 , wherein in a cross-sectional view, a height of the electronic element is greater than or equal to 3 times a height of the first bonding pad and less than or equal to 10 times the height of the first bonding pad.
3 . The electronic device according to claim 2 , wherein a width of the first opening is greater than a width of the second opening.
4 . The electronic device according to claim 1 , wherein a thickness of the first insulating layer is smaller than a thickness of the second insulating layer.
5 . The electronic device according to claim 1 , the circuit structure having a third insulating layer, wherein a thickness of the third insulating layer is greater than a thickness of the second insulating layer.
6 . The electronic device according to claim 5 , the circuit structure further having a seed layer and a conductive layer, wherein the seed layer is disposed on the second insulating layer and in the second opening, and the conductive layer is disposed on the seed layer and in the second opening.
7 . The electronic device according to claim 6 , wherein the third insulating layer is disposed on the conductive layer, the third insulating layer has an opening, and the opening surrounds the first bonding pad.
8 . The electronic device according to claim 6 , the circuit structure comprising a dummy metal, wherein the dummy metal and the conductive layer is a film layer that is the same, and the dummy metal is not electrically connected to the conductive layer.
9 . The electronic device according to claim 1 , wherein the second bonding pad directly contacts the first bonding pad.
10 . The electronic device according to claim 9 , wherein a contact surface between the second bonding pad and the first bonding pad is located within the recess.
11 . The electronic device according to claim 1 , wherein the first bonding pad and the second bonding pad does not overlap a side surface of the electronic element in a normal direction of the electronic device.
12 . A manufacturing method of an electronic device, comprising:
providing a substrate;
forming a package structure on the substrate, wherein the package structure comprises:
an electronic element;
a protective layer, surrounding the electronic element;
a first insulating layer, disposed on the electronic element and having a first opening; and
a second insulating layer, disposed on the first insulating layer and having a second opening;
forming a circuit structure, so that the circuit structure is electrically connected to the package structure;
forming a bonding structure on the circuit structure, wherein the bonding structure comprises a first bonding pad and a second bonding pad, and the first bonding pad is disposed between the second bonding pad and the circuit structure; and
disposing an external element, so that the bonding structure is located between the circuit structure and the external element, and the external element is electrically connected to the circuit structure,
wherein a width of the first bonding pad is smaller than a width of the second bonding pad,
wherein the second insulating layer contacting a side surface of the first insulating layer through the first opening,
wherein the external element contacts the second bonding pad, and the external element and the circuit structure are separated from each other, wherein the first bonding pad and second bonding pad comprise solder ball.
13 . The manufacturing method of the electronic device according to claim 12 , wherein forming the circuit structure comprises:
forming a seed layer on the package structure;
disposing a mask on the seed layer;
patterning the mask, to form a plurality of openings;
forming a conductive layer in the openings;
removing the mask that is patterned and a portion of the seed layer; and
after disposing the first bonding pad on the conductive layer, forming a third insulating layer on the conductive layer to surround the first bonding pad.
14 . The manufacturing method of the electronic device according to claim 12 , wherein in a cross-sectional view, a height of the electronic element is greater than or equal to 3 times a height of the first bonding pad and less than or equal to 10 times the height of the first bonding pad.
15 . The manufacturing method of the electronic device according to claim 14 , wherein a width of the first opening is greater than a width of the second opening.
16 . The manufacturing method of the electronic device according to claim 12 , wherein a thickness of the first insulating layer is smaller than a thickness of the second insulating layer.
17 . The manufacturing method of the electronic device according to claim 12 , wherein the second bonding pad directly contacts the first bonding pad.
18 . The manufacturing method of the electronic device according to claim 17 , wherein a contact surface between the second bonding pad and the first bonding pad is located within the recess.