Semiconductor device including porous semiconductor material adjacent an isolation structure
Disclosed are embodiments of a semiconductor structure including a semiconductor device with an active device region and, within the active device region, porous semiconductor material adjacent to an isolation structure. In some embodiments, the semiconductor device can be a laterally diffused metal oxide semiconductor field effect transistor (LDMOSFET). The LDMOSFET can include an active device region, a well region within the active device region and, within the well region, an isolation structure, a porous region immediately adjacent to the isolation structure, and a drain drift region that borders the isolation structure (e.g., between a channel region and a drain region). The porous region can modify the electric field in the drain drift region around the isolation structure and, as a result, can improve both drain-to-source breakdown voltage (BVdss) and transconductance (Gm) of the device. Also disclosed are method embodiments for forming the semiconductor structure.
1 . A structure comprising:
a semiconductor layer; and
a device including:
a first well region in the semiconductor layer;
a porous region of the semiconductor layer within the first well region; and
an isolation structure in the first well region,
wherein the isolation structure includes: a trench extending into the first well region; and isolation material within the trench,
wherein the isolation material is non-conductive, and
wherein at least one side of the trench of the isolation structure extends into the porous region such that the porous region is at least positioned laterally immediately adjacent to the isolation material of the isolation structure.
2 . The structure of claim 1 , wherein the porous region any one of:
extends deeper into the first well region than the isolation structure and is positioned immediately adjacent to opposing sides and a bottom surface of the isolation structure;
extends deeper into the first well region than the isolation structure and is positioned immediately adjacent to one of the opposing sides and the bottom surface of the isolation structure;
extends shallower into the first well region than the isolation structure and is positioned immediately adjacent to the opposing sides of the isolation structure; and
extends shallower into the first well region than the isolation structure and is positioned immediately adjacent to one of the opposing sides.
3 . The structure of claim 1 , wherein the first well region extends deeper into the semiconductor layer than the porous region.
4 . The structure of claim 1 , wherein the device further includes:
a gate on the semiconductor layer adjacent to the first well region and extending laterally toward the isolation structure over a portion of the porous region;
a drain region immediately adjacent to the first well region and separated from the gate by the isolation structure; and
a drain drift region in the first well region bordering the isolation structure between the drain region and the gate.
5 . The structure of claim 4 , wherein the device further includes a second well region in the semiconductor layer positioned laterally adjacent to the first well region, and wherein the gate is further on the semiconductor layer adjacent to the second well region.
6 . The structure of claim 5 , wherein the second well region abuts the first well region and wherein the gate traverses a junction between the first well region and the second well region.
7 . The structure of claim 5 , wherein the second well region is physically separated from the first well region by an additional region of the semiconductor layer and wherein the gate traverses the additional region.
8 . The structure of claim 5 , wherein the device further includes a source region immediately adjacent to the second well region, wherein the gate is between the drain region and the source region, and wherein the gate is separated from the drain region by a first distance and from the source region by a second distance that is less than the first distance.
9 . The structure of claim 8 ,
wherein the first well region, the drain region, and the source region have a same type conductivity,
wherein the second well region has a different type conductivity than the first well region, the drain region, and the source region, and
wherein the drain region and the source region have a higher conductivity level than the first well region.
10 . The structure of claim 1 , wherein the semiconductor layer includes a silicon layer, and the porous region is a porous silicon region.
11 . A structure comprising:
a semiconductor layer; and
a device including:
a first well region in the semiconductor layer;
a porous region of the semiconductor layer within the first well region;
an isolation structure in the first well region, wherein the isolation structure includes: a trench extending into the first well region; and isolation material within the trench, wherein the isolation material is non-conductive, and wherein at least one side of the trench of the isolation structure extends into the porous region such that the porous region is at least positioned laterally immediately adjacent to the isolation material of the isolation structure;
a drain region immediately adjacent to the first well region;
a second well region in the semiconductor layer positioned laterally adjacent to the first well region, wherein the porous region and the isolation structure are within the first well region between the second well region and the drain region;
a source region immediately adjacent to the second well region;
a gate on the semiconductor layer between the drain region and the source region, wherein the gate is separated from the drain region by a first distance and from the source region by a second distance that is less than the first distance; and
a drain drift region in the first well region bordering the isolation structure between the drain region and the gate.
12 . A method comprising:
providing a semiconductor layer; and
forming a device including:
a first well region in the semiconductor layer;
a porous region in the semiconductor layer within the first well region; and
an isolation structure in the first well region, wherein the isolation structure includes: a trench extending into the first well region; and isolation material within the trench, wherein the isolation material is non-conductive, and
wherein at least one side of the trench of the isolation structure extends into the porous region such that the porous region is at least positioned laterally immediately adjacent to the isolation material of the isolation structure.
13 . The method of claim 12 , wherein the forming of the device includes:
forming the first well region in the semiconductor layer;
forming the porous region in the first well region; and
forming the isolation structure in the first well region adjacent to the porous region, wherein the porous region and the isolation structure are formed so that the porous region any of:
extends deeper into the first well region than the isolation structure and is positioned immediately adjacent to opposing sides and a bottom surface of the isolation structure;
extends deeper into the first well region than the isolation structure and is positioned immediately adjacent to one of the opposing sides and the bottom surface of the isolation structure;
extends shallower into the first well region than the isolation structure and is positioned immediately adjacent to the opposing sides of the isolation structure; and
extends shallower into the first well region than the isolation structure and is positioned immediately adjacent to one of the opposing sides.
14 . The method of claim 13 , wherein the first well region and the porous region are formed so that the first well region extends deeper into the semiconductor layer than the porous region.
15 . The method of claim 13 , wherein the forming of the porous region includes performing an electrochemical etch process.
16 . The method of claim 13 , wherein the forming of the device further includes:
forming a second well region in the semiconductor layer positioned laterally adjacent to the first well region; and
forming a gate on the semiconductor layer, wherein the gate extends laterally from the isolation structure over portions of the porous region, the first well region, and the second well region.
17 . The method of claim 16 , wherein the first well region and the second well region are formed so the second well region abuts the first well region and wherein the gate is formed traversing a junction between the first well region and the second well region.
18 . The method of claim 16 , wherein the first well region and the second well region are formed so the second well region is physically separated from the first well region by an additional region of the semiconductor layer and wherein the gate is formed traversing the additional region.
19 . The method of claim 16 , wherein the forming of the device further includes forming a drain region and a source region so the drain region is immediately adjacent to the first well region, the source region is immediately adjacent to the second well region, and so the gate is between the drain region and the source region, separated from the drain region by a first distance, and separated from the source region by a second distance that is less than the first distance.
20 . The method of claim 12 , wherein the semiconductor layer includes a silicon layer, and the porous region is a porous silicon region.