Patent Assignment
Reel/Frame 019511/0091
Release of Security Interest
Recorded: 2007-07-03
Received: 2007-07-03
Pages: 7
Assignor
BANK OF AMERICA, N.A., AS COLLATERAL AGENT
Executed: 2007-07-02
Assignee
THE DILLER CORPORATION
CHEMED CENTER 255 EAST FIFTH STREET, CINCINNATI, OH, 45202, UNITED STATES
Covered Properties
(30)
Crystalline composition, wafer, and semi-conductor structure
Application:
11/376,640 →
Crystalline composition, wafer, and semi-conductor structure
Application:
11/376,575 →
Method for Making Crystalline Composition
Application:
11/313,528 →
Apparatus for Making Crystalline Composition
Application:
11/313,442 →
Crystalline Composition, Device, and Associated Method
Application:
11/313,451 →
Method for Reducing Defect Concentration in Crystals
Application:
11/300,660 →
Resonant Cavity Light Emitting Devices and Associated Method
Application:
11/295,627 →
Single crystal and quasi-single crystal, composition, apparatus, and associated method
Application:
11/249,872 →
Apparatus for Producing Single Crystal and Quasi-Single Crystal, and Associated Method
Application:
11/249,896 →
Etchant, Method of Etching, Laminate Formed Thereby, and Device
Application:
11/167,719 →
Apparatus for Processing Materials in Supercritical Fluids and Methods Thereof
Application:
11/042,858 →
Gallium Nitride Crystals and Wafers and Method of Making
Application:
11/010,507 →
High Temperature High Pressure Capsule for Processing Materials in Supercritical Fluids
Application:
11/010,139 →
Decorative laminate assembly with improved tie sheet and bridging agent
Application:
10/954,885 →
Homoepitaxial Gallium Nitride Based Photodetector and Method of Producing
Application:
10/932,127 →
Homoepitaxial Gallium-Nitride-Based Light Emitting Device and Method for Producing
Application:
10/831,865 →
Wafer Handling Apparatus and Method of Manufacturing Thereof
Application:
10/759,582 →
High Pressure/High Temperature Apparatus with Improved Temperature Control for Crystal Growth
Application:
10/699,504 →
Group Iii-Nitride Based Resonant Cavity Light Emitting Devices Fabricated on Single Crystal Gallium Nitride Substrates
Application:
10/693,803 →
Homoepitaxial Gallium-Nitride-Based Light Emitting Device and Method for Producing
Application:
10/440,574 →
Coupling Agents for Mineral-Filled Elastomer Compositions
Application:
10/405,721 →
Gallium Nitride Crystal and Method of Making Same
Application:
10/329,981 →
Homoepitaxial Gallium-Nitride-Based Electronic Devices and Method for Producing Same
Application:
10/329,982 →
High Pressure High Temperature Growth of Crystalline Group Iii Metal Nitrides
Application:
10/063,164 →
Pressure vessel
Application:
09/683,658 →
High Temperature High Pressure Capsule for Processing Materials in Supercritical Fluids
Application:
09/683,659 →
Sintered Polycrystalline Gallium Nitride and Its Production
Application:
10/001,575 →
Decorative Laminate Assembly and Method of Producing Same
Application:
09/955,822 →
Homoepitaxial Gallium Nitride Based Photodetector and Method of Producing
Application:
09/839,941 →
Decorative Laminate Assembly and Method for Producing Same
Application:
09/767,556 →