Patent Assignment
Reel/Frame 029112/0198
Assignment of Assignor's Interest
Recorded: 2012-10-11
Received: 2012-10-11
Pages: 7
Assignor
SPANSION INC.
Executed: 2012-10-10
Assignee
SPANSION LLC
915 DEGUIGNE DRIVE, P. O. BOX 3453, SUNNYVALE, CA, 94088-3453, UNITED STATES
Covered Properties
(45)
Method and Apparatus for Address Allotting and Verification in a Semiconductor Device
Application:
12/903,065 →
Method and Apparatus for Address Allotting and Verification in a Semiconductor Device
Application:
12/199,684 →
Semiconductor Device with High Conductivity Region Using Shallow Trench
Application:
11/685,711 →
Semiconductor Memory Device and Manufacturing Method Thereof
Application:
11/247,328 →
Nonvolatile Semiconductor Memory Device That Erases Stored Data After a Predetermined Time Period Without the Use of a Timer Circuit
Application:
11/087,735 →
Semiconductor Memory Device and Semiconductor Memory Device Control Method
Application:
11/029,454 →
Semiconductor Device and Method of Manufacturing the Same
Application:
10/986,652 →
Semiconductor Memory Device and Manufacturing Method Thereof
Application:
10/768,188 →
Semiconductor Memory
Application:
10/747,692 →
Nonvolatile Semiconductor Memory Device Storing Two-Bit Information
Application:
10/717,622 →
Semiconductor Memory Enabling Correct Substitution of Redundant Cell Array
Application:
10/658,428 →
Memory Circuit with Redundant Configuration
Application:
10/652,035 →
Method of Manufacturing a Memory Integrated Circuit Device
Application:
10/650,072 →
Semiconductor Memory Capable of Being Driven at Low Voltage and Its Manufacture Method
Application:
10/649,994 →
Nonvolatile Semiconductor Memory Device Including a Plurality of Blocks and a Sensing Circuit Provided in Each of the Blocks for Comparing Data with a Reference Signal Having a Load Imposed Thereon
Application:
10/633,535 →
Nonvolatile Memory Having a Trap Layer
Application:
10/631,812 →
Nonvolatile Semiconductor Memory Device Supplying Proper Program Potential
Application:
10/631,856 →
Nonvolatile Semiconductor Memory Device
Application:
10/455,310 →
Nonvolatile Semiconductor Storage Device and Data Erasing Method
Application:
10/454,630 →
Non-Volatile Semiconductor Memory Device and Method of Fabricating Thereof
Application:
10/437,896 →
Semiconductor Device Low Temperature Test Apparatus Using Electronic Cooling Element
Application:
10/404,081 →
Non-Volatile Semiconductor Memory That Is Based on a Virtual Ground Method
Application:
10/392,912 →
Non-Volatile Semiconductor Memory and Method of Manufacturing the Same
Application:
10/387,427 →
Nonvolatile Semiconductor Memory Device
Application:
10/387,064 →
Non-Volatile Semiconductor Storage Device and Method of Reading Out Data
Application:
10/356,496 →
Nonvolatile Semiconductor Memory Device Programming Second Dynamic Reference Cell According to Threshold Value of First Dynamic Reference Cell
Application:
10/356,495 →
Semiconductor Memory Apparatus
Application:
10/304,762 →
Method for Manufacturing Non-Volatile Semiconductor Memory and Non-Volatile Semiconductor Memory Manufactured Thereby
Application:
10/237,805 →
Semiconductor Memory and Method of Driving the Same
Application:
10/207,056 →
System for Using a Dynamic Reference in a Double-Bit Cell Memory
Application:
10/197,116 →
Method of Driving a Semiconductor Memory
Application:
10/160,050 →
Method for Error Detection/Correction of Multilevel Cell Memory and Multilevel Cell Memory Having Error Detection/Correction Function
Application:
10/146,074 →
System for Reading a Double-Bit Memory Cell
Application:
10/143,449 →
System for Control of Pre-Charge Levels in a Memory Device
Application:
10/136,034 →
System for Programming a Flash Memory Device
Application:
10/136,033 →
Semiconductor Memory and Its Usage
Application:
10/097,924 →
System for Setting Memory Voltage Threshold
Application:
10/096,338 →
Semiconductor Memory and Method of Manufacture Thereof
Application:
10/085,023 →
Multiple-Bit Non-Volatile Memory Utilizing Non-Conductive Charge Trapping Gate
Application:
10/030,117 →
Method and Device for Reading Dual Bit Memory Cells Using Multiple Reference Cells with Two Side Read
Application:
10/052,484 →
Nonvolatile Semiconductor Memory
Application:
10/043,114 →
Semiconductor Memory Capable of Being Driven at Low Voltage and Its Manufacture Method
Application:
09/973,743 →
Non-Volatile Semiconductor Memory Device and Fabrication Process Thereof
Application:
09/963,632 →
Non-Volatile Semiconductor Memory and Its Driving Method
Application:
09/927,387 →
Semiconductor Memory Device Having Source Areas of Memory Cells Supplied with a Common Voltage
Application:
09/818,652 →