Corrective Assignment to Correct the Incorrect Document Attached Previously Recorded on Reel 047702 Frame 0815. Assignor(S) Hereby Confirms the Assignment.

Recorded: 2019-04-16 Received: 2019-04-16 Pages: 9

Assignor

SAMSUNG ELECTRONICS CO., LTD.

Executed: 2018-11-19

Assignee

1717 MCKINNEY AVENUE, SUITE 1050, DALLAS, TX, 75202, UNITED STATES

Covered Properties (17)

Light Projecting Apparatus

Application: 16/387,457 →

Three-Dimensional Semiconductor Devices and Methods of Fabricating the Same

Application: 14/635,588 →

Three-Dimensional Semiconductor Devices and Methods of Fabricating the Same

Application: 14/152,440 →

Multilevel Cell Nonvolatile Memory System

Application: 13/798,419 →

Methods of Forming Nonvolatile Memory Devices Having Electromagnetically Shielding Source Plates

Application: 13/349,181 →

Semiconductor Device with a Pick-Up Region

Application: 13/109,230 →

Semiconductor Device and Method of Manufacturing the Same

Application: 12/923,497 →

Methods of Manufacturing Charge Trap Type Memory Devices

Application: 12/726,014 →

Three-Dimensional Semiconductor Devices Including Select Gate Patterns Having Different Work Function from Cell Gate Patterns

Application: 12/651,727 →

Nonvolatile Memory Devices Having Electromagnetically Shielding Source Plates

Application: 12/437,209 →

Semiconductor Device and Method of Manufacturing the Same

Application: 11/798,947 →

Semiconductor Device and Method of Manufacturing the Same

Application: 11/657,650 →

Redundancy Selector Circuit for Use in Non-Volatile Memory Device

Application: 11/444,353 →

Charge Trap-Type 3-Level Non-Volatile Semiconductor Memory Device and Method of Driving the Same

Application: 11/341,341 →

Flash Memory and Method of Fabricating the Same

Application: 11/327,321 →

Row Decoder Circuit for Use in Non-Volatile Memory Device

Application: 11/167,984 →

Page Buffer for Nonvolatile Semiconductor Memory Device and Method of Operation

Application: 11/133,214 →