Semiconductor package and method of forming the same
An embodiment is a structure including a first die having an active surface with a first center point, a molding compound at least laterally encapsulating the first die, and a first redistribution layer (RDL) including metallization patterns extending over the first die and the molding compound. A first portion of the metallization patterns of the first RDL extending over a first portion of a boundary of the first die to the molding compound, the first portion of the metallization patterns not extending parallel to a first line, the first line extending from the first center point of the first die to the first portion of the boundary of the first die.
1. A method comprising:
forming a first through via adjacent a first die, two sidewalls of the first die meeting in a first corner region;
at least laterally encapsulating the first die and the first through via in a molding compound;
forming a first redistribution structure over and electrically coupled to the first die and the first through via, the first redistribution structure comprising a first metallization pattern, the first metallization pattern overlying the first corner region extending in directions that have a first angle relative to one of the sidewalls of the first die, the first angle being in a range from 75 degrees to 105 degrees; and
forming a first set of conductive connectors over and electrically coupled to the first redistribution structure.
2. The method of claim 1 , wherein the first corner region extends at least 200 μm within the first die from the corresponding sidewall of the first die and at least 300 μm into the molding compound from the corresponding sidewall of the first die.
3. The method of claim 1 , wherein the first metallization pattern overlying a first side region of the first die extending in directions that have a second angle relative to nearest sidewall of the first die, the second angle being in a range from 30 degrees to 60 degrees, the first side region being adjacent the first corner region and interposed between the first corner region and another corner region of the first die.
4. The method of claim 3 , wherein the first side region extends at least 200 μm within the first die from the corresponding sidewall of the first die and at least 300 μm into the molding compound from the corresponding sidewall of the first die.
5. A method comprising:
forming a first package comprising:
forming an electrical connector over a carrier substrate;
attaching a first die to the carrier substrate, the electrical connector extending from a second side of the first die to a first side of the first die, the second side being opposite the first side, the electrical connector being adjacent the first die, the first side of the first die having a first center point;
encapsulating the first die and the electrical connector with a molding compound; and
forming a redistribution structure overlying the first side of the first die and the molding compound, the redistribution structure comprising a first portion of metallization patterns extending over a first portion of a boundary of the first die to the molding compound, the first portion of the metallization patterns not extending parallel to a first line, the first line extending from the first center point of the first die to the first portion of the boundary of the first die.
6. The method of claim 5 , wherein the first portion of the metallization patterns of the redistribution structure extend straight through or have bends of about 90 degrees.
7. The method of claim 6 , wherein the first portion of the metallization patterns of the redistribution structure extends at least 200 μm within the first die from the corresponding sidewall of the first die and at least 300 μm into the molding compound from the corresponding sidewall of the first die.
8. The method of claim 5 , wherein forming the first package further comprises:
forming a first set of conductive connectors over and electrically coupled to the redistribution structure; and
removing the carrier substrate.
9. The method of claim 8 further comprising:
bonding a second package to the first package using a second set of conductive connectors, the second package being proximate the second side of the first die.
10. The method of claim 9 further comprising:
bonding a substrate to the second package using the first set of conductive connectors.
11. The method of claim 9 , wherein the second package comprises a second die.
12. A method comprising:
forming a first electrical connector over a carrier substrate;
adhering a back side of a first die to the carrier substrate using an adhesive, the first electrical connector being adjacent the first die, the first die having an active surface with a first center point, the first electrical connector extending from the adhesive on the back side of the first die to the active surface of the first die;
laterally encapsulating the first die and the first electrical connector in a molding compound; and
forming a first redistribution structure over the molding compound and over and electrically coupled to the active surface of the first die and to the first electrical connector, the first redistribution structure comprising a first redistribution layer (RDL) comprising metallization patterns extending over the first die and the molding compound, a first portion of the metallization patterns of the first RDL extending over a first portion of a boundary of the first die to the molding compound, the first portion of the boundary of the first die being less than a side of the first die, the first portion of the metallization patterns not extending parallel to a first line, the first line extending from the first center point of the first die to the first portion of the boundary of the first die.
13. The method of claim 12 , wherein the first portion of the metallization patterns of the first RDL are in a first corner region of the first die, the first portion of the metallization patterns of the first RDL having a first angle relative to one of the sidewalls of the first die, two sidewalls of the first die meeting at the first corner region, the first angle being in a range from 75 degrees to 105 degrees.
14. The method of claim 13 , wherein the first portion of the metallization patterns of the first RDL in the first corner region extend straight through the first corner region or have bends of about 90 degrees.
15. The method of claim 12 , wherein the first portion of the metallization patterns of the first RDL are in a first side region of the first die, the first portion of the metallization patterns of the first RDL having a second angle relative to the nearest sidewall of the first die, the first side region being between two corner regions of the first die, the second angle being in a range from 30 degrees to 60 degrees.
16. The method of claim 15 , wherein the first portion of the metallization patterns of the first RDL in the first side region extend straight through the first side region or have bends of about 90 degrees.
17. The method of claim 12 further comprising:
forming a first set of conductive connectors over and electrically coupled to the first redistribution structure; and
removing the carrier substrate to expose an end of the first electrical connector.
18. The method of claim 17 further comprising:
bonding a first package to the exposed end of the first electrical connector using a second conductive connectors, the first package being proximate the back side of the first die.
19. The method of claim 18 further comprising:
bonding a substrate to the first redistribution structure using the first set of conductive connectors.