Method of reducing residual contamination in singulated semiconductor die
View Patent ↗In one embodiment, semiconductor die are singulated from a semiconductor wafer by placing the semiconductor wafer onto a carrier tape, forming singulation lines through the semiconductor wafer, and reducing the presence of residual contaminates on the semiconductor wafer.
1. A method of singulating a semiconductor wafer comprising:
providing the semiconductor wafer having a plurality of die formed as part of the semiconductor wafer and separated from each other by spaces, wherein the semiconductor wafer has first and second opposing major surfaces;
providing a first carrier tape attached to a frame;
affixing the first carrier tape adjacent to the second major surface;
in a single singulation step, plasma etching the semiconductor wafer through the spaces from the first major surface extending to the second major surface to form singulation lines, wherein the single singulation step provides a plurality of singulated die; and
exposing the plurality of singulated die to at least one solvent to remove at least portions of residual material resulting from the plasma etching step from surfaces of the plurality of singulated die, wherein the plurality of singulated die remain affixed to the first carrier tape after exposure to the solvent.
2. The method of claim 1 , wherein:
exposing the plurality of singulated die comprises exposing to at least one heated solvent.
3. The method of claim 1 , wherein exposing comprises exposing to at least an alcohol.
4. The method of claim 1 , wherein:
providing the semiconductor wafer comprises providing a layer of material disposed adjacent to the second major surface;
affixing the first carrier tape comprises affixing the first carrier tape directly to the layer of material;
plasma etching comprises terminating the plasma etching step proximate to the layer of material; and
the method further comprises physically separating the layer of material from the singulation lines.
5. The method of claim 4 , wherein providing the layer of material comprises providing a conductive layer.
6. The method of claim 4 , wherein providing the layer of material comprises providing one or more of a wafer back coating or a die attach film layer.
7. A method of singulating semiconductor die from a semiconductor wafer comprising:
providing the semiconductor wafer having a plurality of semiconductor die formed as part of the semiconductor wafer and separated from each other by spaces defining where singulation lines will be formed, wherein the semiconductor wafer has first and second opposing major surfaces, and wherein a layer of material is formed adjacent the second major surface;
placing a first carrier substrate onto the layer of material;
plasma etching the semiconductor wafer through the spaces to form the singulation lines while the semiconductor wafer is attached to the first carrier substrate and using the layer of material as a stop layer;
thereafter physically separating the layer of material from the singulation lines; and
using at least one solvent to reduce the presence of residual contaminants resulting from the plasma etching step from surfaces of the plurality of semiconductor die, wherein:
the step of using the at least one solvent is performed before the step of physically separating the layer of material; and
the semiconductor wafer remains affixed to the first carrier substrate after the step of using the at least one solvent.
8. The method of claim 7 , wherein physically separating the layer of material comprises:
attaching a second carrier substrate to the first major surface of the semiconductor wafer;
removing the first carrier substrate; and
removing the layer of material from the singulation lines using a fluid.
9. The method of claim 7 , wherein physically separating the layer of material comprises:
physically separating first portions of the layer of material using a first fluid ablation process while the layer of material is attached to the first carrier substrate;
attaching a second carrier substrate to the first major surface of the semiconductor wafer;
removing the first carrier substrate; and
physically separating second portions of the layer of material using a second fluid ablation process;
attaching a third carrier substrate onto the second major surface after removing the second portions; and
removing the second carrier substrate.
10. The method of claim 7 , wherein:
the step of using the at least one solvent comprises using at least one heated solvent.
11. The method of claim 7 , wherein:
providing the semiconductor wafer comprises providing the layer of material comprising a metal.
12. The method of claim 7 , wherein placing the first carrier substrate comprises providing a first carrier tape attached to a support frame.
13. A method of singulating a semiconductor wafer comprising:
providing the semiconductor wafer having a plurality of die formed as part of the semiconductor wafer and separated from each other by spaces, wherein the semiconductor wafer has a first major surface and a with second major surface opposite the first major surface;
providing a first carrier substrate;
affixing the first carrier substrate adjacent to the second major surface;
in a single singulation step, plasma etching the semiconductor wafer through the spaces from the first major surface extending to the second major surface to form singulation lines, wherein the single singulation step provides a plurality of singulated die; and
exposing the plurality of singulated die to at least one solvent to remove at least portions of residual material resulting from the plasma etching step from surfaces of the plurality of singulated die, wherein the plurality of singulated die remain affixed to the first carrier substrate after exposure to the solvent.
14. The method of claim 13 , wherein providing the first carrier substrate comprises providing a first carrier tape.
15. The method of claim 13 , wherein exposing comprises exposing to at least an alcohol.
16. The method of claim 13 , wherein:
providing the semiconductor wafer comprises providing a layer of material disposed atop the second major surface.
17. The method of claim 16 , wherein:
affixing the first carrier substrate comprises affixing the first carrier substrate directly to the layer of material.
18. The method of claim 16 , wherein:
plasma etching comprises terminating the plasma etching step proximate to the layer of material; and
the method further comprises physically separating the layer of material from the singulation lines.
19. The method of claim 18 , wherein physically separating the layer of material occurs after using the at least one solvent.
20. The method of claim 18 further comprising stretching the first carrier substrate for at least some period of time while physically separating the layer of material.
21. The method of claim 16 , wherein providing the semiconductor wafer comprises providing the layer of material comprising a conductive material.
22. The method of claim 21 , wherein providing the layer of material comprises providing a layer comprising a metal.
23. The method of claim 13 further comprising:
affixing a second carrier substrate to the first major surface of the semiconductor wafer after the step of plasma etching the semiconductor wafer.