3D semiconductor device and structure with metal layers and a connective path
A 3D semiconductor device including: a first level including a single crystal silicon layer and a plurality of first transistors, the plurality of first transistors each including a single crystal channel; a first metal layer overlaying the plurality of first transistors; a second metal layer overlaying the first metal layer; a third metal layer overlaying the second metal layer; a second level is disposed above the third metal layer, where the second level includes a plurality of second transistors; a fourth metal layer disposed above the second level; and a connective path between the fourth metal layer and either the third metal layer or the second metal layer, where the connective path includes a via disposed through the second level, where the via has a diameter of less than 800 nm and greater than 5 nm, and where at least one of the plurality of second transistors includes a metal gate.
1. A 3D semiconductor device, the device comprising:
a first level comprising a single crystal silicon layer and a plurality of first transistors, said plurality of first transistors each comprising a single crystal channel;
a first metal layer overlaying said plurality of first transistors;
a second metal layer overlaying said first metal layer;
a third metal layer overlaying said second metal layer;
a second level,
wherein said second level is disposed above said third metal layer,
wherein said second level comprises a plurality of second transistors;
a fourth metal layer disposed above said second level; and
a connective path between said fourth metal layer and either said third metal layer or said second metal layer,
wherein said connective path comprises a via disposed through said second level,
wherein said via has a diameter of less than 800 nm and greater than 5 nm,
wherein said third metal layer is connected to provide a power or ground signal to at least one of said plurality of second transistors,
wherein said via comprises tungsten, and
wherein said second metal layer is 50% thicker than said third metal layer.
2. The device according to claim 1 ,
wherein at least one of said plurality of second transistors comprises a metal gate.
3. The device according to claim 1 ,
an overall chip power-grid structure,
wherein said overall chip power-grid structure comprises said fourth metal layer.
4. The device according to claim 1 ,
wherein at least six of said plurality of first transistors are connected in series to form at least a portion of a NAND logic gate.
5. A 3 D semiconductor device, the device comprising:
a first level comprising a single crystal silicon layer and a plurality of first transistors, said plurality of first transistors each comprising a single crystal channel;
a first metal layer overlaying said plurality of first transistors;
a second metal layer overlaying said first metal layer;
a third metal layer overlaying said second metal layer;
a second level,
wherein said second level is disposed above said third metal layer,
wherein said second level comprises a plurality of second transistors;
a fourth metal layer disposed above said second level; and
a connective path between said fourth metal layer and either said third metal layer or said second metal layer,
wherein said connective path comprises a via disposed through said second level,
wherein said via has a diameter of less than 800 nm and greater than 5 nm,
wherein said third metal layer is connected to provide a power or ground signal to at least one of said plurality of second transistors,
wherein said via comprises tungsten, and
wherein at least one of said plurality of second transistors comprises a gate all around structure.
6. The device according to claim 5 ,
wherein said second metal layer is 50% thicker than said third metal layer.
7. The device according to claim 5 ,
wherein at least one of said plurality of second transistors comprises a metal gate.
8. The device according to claim 5 ,
wherein at least six of said plurality of first transistors are connected in series to form at least a portion of a NAND logic gate.
9. A 3D semiconductor device, the device comprising:
a first level comprising a single crystal silicon layer and a plurality of first transistors, said plurality of first transistors each comprising a single crystal channel;
a first metal layer overlaying said plurality of first transistors;
a second metal layer overlaying said first metal layer;
a third metal layer overlaying said second metal layer;
a second level,
wherein said second level is disposed above said third metal layer,
wherein said second level comprises a plurality of second transistors;
a fourth metal layer disposed above said second level; and
a connective path between said fourth metal layer and either said third metal layer or said second metal layer,
wherein said connective path comprises a via disposed through said second level,
wherein said via has a diameter of less than 800 nm and greater than 5 nm,
wherein said third metal layer is connected to provide a power or ground signal to at least one of said plurality of second transistors,
wherein said via comprises tungsten; and
an overall chip power-grid structure,
wherein said overall chip power-grid structure comprises said fourth metal layer.
10. The device according to claim 9 ,
wherein at least six of said plurality of first transistors are connected in series to form at least a portion of a NAND logic gate.
11. The device according to claim 9 ,
wherein at least one of said plurality of second transistors comprises a metal gate.
12. The device according to claim 9 ,
wherein at least one of said plurality of second transistors comprises a gate all around structure.
13. A 3D semiconductor device, the device comprising:
a first level comprising a single crystal silicon layer and a plurality of first transistors, said plurality of first transistors each comprising a single crystal channel;
a first metal layer overlaying said plurality of first transistors;
a second metal layer overlaying said first metal layer;
a third metal layer overlaying said second metal layer;
a second level,
wherein said second level is disposed above said third metal layer,
wherein said second level comprises a plurality of second transistors;
a fourth metal layer disposed above said second level; and
a connective path between said fourth metal layer and either said third metal layer or said second metal layer,
wherein said connective path comprises a via disposed through said second level,
wherein said via has a diameter of less than 800 nm and greater than 5 nm,
wherein at least one of said plurality of second transistors comprises a metal gate; and
an overall chip power-grid structure,
wherein said overall chip power-grid structure comprises said fourth metal layer.
14. The device according to claim 13 ,
wherein at least six of said plurality of first transistors are connected in series to form at least a portion of a NAND logic gate.
15. The device according to claim 13 ,
wherein said second metal layer is 50% thicker than said third metal layer.
16. The device according to claim 13 ,
wherein at least one of said plurality of second transistors comprises a gate all around structure.
17. A 3D semiconductor device, the device comprising:
a first level comprising a single crystal silicon layer and a plurality of first transistors, said plurality of first transistors each comprising a single crystal channel;
a first metal layer overlaying said plurality of first transistors;
a second metal layer overlaying said first metal layer;
a third metal layer overlaying said second metal layer;
a second level,
wherein said second level is disposed above said third metal layer,
wherein said second level comprises a plurality of second transistors;
a fourth metal layer disposed above said second level;
a connective path between said fourth metal layer and either said third metal layer or said second metal layer,
wherein said connective path comprises a via disposed through said second level,
wherein said via has a diameter of less than 800 nm and greater than 5 nm,
wherein at least six of said plurality of first transistors are connected in series to form at least a portion of a NAND logic gate,
wherein at least one of said plurality of second transistors comprises a metal gate; and
an overall chip power-grid structure,
wherein said overall chip power-grid structure comprises said fourth metal layer.
18. The device according to claim 17 ,
wherein said second metal layer is 50% thicker than said third metal layer.
19. The device according to claim 17 ,
wherein at least one of said plurality of second transistors comprises a gate all around structure.
20. The device according to claim 17 ,
wherein said third metal layer comprises a connection to at least one of said plurality of second transistors.