Semiconductor packages with die including cavities and related methods
Implementations of a method of forming a semiconductor package may include forming a plurality of notches into the first side of a semiconductor substrate; forming an organic material over the first side of the semiconductor substrate and into the plurality of notches; forming a cavity into each of a plurality of semiconductor die included in the semiconductor substrate; applying a backmetal into the cavity in each of the plurality of semiconductor die included in the semiconductor substrate; and singulating the semiconductor substrate through the organic material into a plurality of semiconductor packages.
1. A semiconductor package comprising:
a semiconductor die comprising a first side and a second side opposite the first side;
a cavity extending into the second side of the semiconductor die;
a plurality of notches extending into the first side of the semiconductor die;
a backmetal coupled within the cavity; and
an organic material coupled over the first side of the semiconductor die and within the plurality of notches;
wherein the plurality of notches form a step around an outermost perimeter of the first side; and
wherein a greatest depth of the cavity extends only partially into the second side of the semiconductor die.
2. The semiconductor package of claim 1 , wherein the organic material only partially covers one or more sidewalls of the semiconductor die.
3. The semiconductor package of claim 1 , wherein the organic material further comprises a die support structure.
4. The semiconductor package of claim 1 , wherein a largest planar surface of the second side of the semiconductor die is within the cavity.
5. The semiconductor package of claim 1 , further comprising a conductive material coupled within the cavity and directly coupled to only a largest planar surface of the backmetal.
6. The semiconductor package of claim 5 , wherein multiple surfaces of the backmetal are exposed on multiple outer surfaces of the semiconductor package.
7. The semiconductor package of claim 1 , wherein the backmetal covers an entirety of the second side of the semiconductor die.
8. A semiconductor package comprising:
a semiconductor die comprising a first side and a second side opposite the first side, the first side comprising a step along an outer perimeter of the first side;
a cavity extending into the second side of the semiconductor die;
a backmetal coupled within the cavity; and
an organic material coupled over the first side of the semiconductor die and within the step;
wherein a greatest depth of the cavity extends only partially into the second side of the semiconductor die.
9. The semiconductor package of claim 8 , wherein the organic material only partially covers one or more sidewalls of the semiconductor die.
10. The semiconductor package of claim 8 , wherein the organic material further comprises a die support structure.
11. The semiconductor package of claim 8 , wherein a largest planar surface of the second side of the semiconductor die is within the cavity.
12. The semiconductor package of claim 8 , further comprising a conductive material coupled within the cavity and directly coupled to only a largest planar surface of the backmetal.
13. The semiconductor package of claim 8 , wherein the backmetal covers an entirety of the second side of the semiconductor die.
14. The semiconductor package of claim 8 , wherein a thinned portion of the semiconductor die is less than five microns thick.
15. A semiconductor package comprising:
a semiconductor die comprising a first side and a second side opposite the first side;
a cavity extending into the second side of the semiconductor die;
a backmetal coupled within the cavity; and
an organic material coupled over the first side of the semiconductor die, wherein the organic material only partially covers one or more sidewalls of the semiconductor die;
wherein a greatest depth of the cavity extends only partially into the second side of the semiconductor die.
16. The semiconductor package of claim 15 , wherein the organic material further comprises a die support structure.
17. The semiconductor package of claim 15 , wherein a largest planar surface of the second side of the semiconductor die is within the cavity.
18. The semiconductor package of claim 15 , further comprising a conductive material coupled within the cavity and directly coupled to only a largest planar surface of the backmetal.
19. The semiconductor package of claim 18 , wherein multiple surfaces of the backmetal are exposed on multiple outer surfaces of the semiconductor package.
20. The semiconductor package of claim 15 , wherein a thinned portion of the semiconductor die is less than five microns thick.