IP Library Granted Patent US 12,475,965
Granted Patent B2
US 12,475,965 · App. 18/504,302 · Granted Nov 18, 2025

Apparatuses and methods for configurable ECC modes

Inventors: Scott E. Smith (Boise, ID); Sujeet Ayyapureddi (Boise, ID)
Assignee: Micron Technology, Inc.
G11C29/42G06F11/1016G06F11/102G06F11/1044G11C29/52H03M13/05H03M13/2906G06F2211/104
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 12,475,965
App. No.
18/504,302
Granted
Nov 18, 2025
Kind
B2
Abstract

Apparatuses, systems, and methods for an enhanced ECC mode. The memory array includes a number of data column planes and an extra column plane. When the memory device is set in an Enhanced ECC mode, data is stored in a subset of the data column planes, and an error correction code circuit (ECC) stores corresponding parity data in one of a column plane other than one of the subset of data column planes or the extra column plane. In this manner, memory may be capable of performing single error correction or single error correction with double error detection (SECDED) depending on the mode selected.

Claims (43)

1 . An apparatus comprising:

a first data column plane comprising a first bit line;

a second data column plane comprising a second bit line;

an extra column plane comprising a third bit line;

a column decoder configured to, as part of an access operation, activate the first bit line, and activate at least one of the second bit line or the third bit line; and

an error correction code (ECC) circuit configured to, as part of the access operation:

access data bits along the first bit line,

in a first mode, access additional data bits along the second bit line and parity bits along the third bit line, and

in a second mode, access the parity bits along the activated one of the second or third bit line.

2 . The apparatus of claim 1 , wherein, as part of a second access operation:

the column decoder is configured to activate a fourth bit line of the second data column plane and activate one of a fifth bit line of the first data column plane or a sixth bit line of the extra column plane; and

the ECC circuit is configured to access second data bits along the fourth bit line and parity bits along the activated one of the fifth or sixth bit line.

3 . The apparatus of claim 2 , wherein the column decoder is configured to activate the first bit line during the access operation based on a column select bit of a first column address having a first value specifying that the data bits are stored at the first data column plane and to activate the fourth bit line during the second access operation based on the column select bit of a second column address having a second value specifying that the second data bits are stored at the first data column plane.

4 . The apparatus of claim 1 , wherein the column decoder is configured to selectively activate the one of the second bit line or the third bit line bit lines based on a received column address.

5 . The apparatus of claim 1 , wherein the first data column plane has a same number of memory cells as the extra column plane.

6 . The apparatus of claim 1 , further comprising an input/output circuit configured to receive the data bits from the ECC circuit if the access operation is a read operation and configured to provide the data bits to the ECC circuit if the access operation is a write operation.

7 . The apparatus of claim 1 , wherein the ECC circuit is configured to locate and correct errors in the data bits based on the parity bits when the access operation is a read operation.

8 . The apparatus of claim 1 , wherein responsive to a column address received as part of the access operation, the column decoder is configured to provide a column select signal with a first value to the first data column plane, and to provide one of a second column select signal with a second value to the second data column plane or a third column select signal with the first value to the extra column plane.

9 . The apparatus of claim 8 , wherein the apparatus is a memory device operating in an x4 mode.

10 . An apparatus comprising:

a memory bank comprising:

a first plurality of column planes;

a second plurality of column planes; and

an extra column plane; and

a column decoder configured to select the first or the second plurality of column planes based on a column address received as part of an access operation, wherein as part of the access operation data bits are accessed in the selected one of the first or the second plurality of column planes, and based on the column address, parity bits are accessed in one of the extra column plane or the non-selected one of the first or the second plurality of column planes, wherein in a first mode, additional data bits are accessed in the other one of the first or the second plurality of column planes and the parity bits are accessed in the extra column plane, and wherein in a second mode, the parity bits are accessed in the second plurality of column planes or the extra column plane.

11 . The apparatus of claim 10 , further comprising an error correction code (ECC) circuit configured to locate and correct errors in the data bits based on the parity bits.

12 . The apparatus of claim 10 , wherein the ECC circuit is configured to perform single error correction, double error detection (SECDED) based on the parity bits and the data bits in the second mode.

13 . The apparatus of claim 12 , wherein the column decoder is configured to decode the column address to determine whether the parity bits are stored at the extra column plane or the non-selected one of the first or the second plurality of column planes.

14 . The apparatus of claim 10 , wherein the column decoder is configured to select the one of the first plurality of column planes or the second plurality of column planes based on a column plane select bit of the column address.

15 . A method comprising:

receiving a column address as part of an access operation;

accessing data bits from columns in a first portion of a plurality of data column planes as part of the access operation based on the column address; and

based on the column address, accessing parity bits from one of a column in a column plane not in the first portion of the plurality of data column planes or in a column of an extra column plane as part of the access operation,

wherein in a first mode, accessing additional data bits from the one of the column in the column plane in the first portion of the plurality of data column planes and the parity data bits in the column of the extra column plane, and

wherein in a second mode, accessing the parity data bits from the one of the volume in the column plane not in the first portion of the plurality of data column planes or in the column of the extra column plane.

16 . The method of claim 15 , further comprising correcting an error in the data bits based on the parity bits with an error correction code (ECC) circuit.

17 . The method of claim 15 , further comprising performing single error correction, double error detection (SECDED) with an error correction code (ECC) circuit using the parity bits in the second mode.

18 . The method of claim 15 , further comprising accessing the parity bits from the column in the column plane not in the first portion of the plurality of data column planes in response to the column address having a first value.

19 . The method of claim 18 , further comprising accessing the parity bits from the column in the extra column plane in response to the column address having a second value.

20 . The method of claim 19 , further comprising:

receiving a second column address as part of a second access operation;

accessing second data bits from a second portion of the plurality of data column planes non-overlapping with the first portion of the plurality of data column planes as part of the second access operation based on the second column address; and

based on the second column address, accessing parity bits from one of a column in the first portion of the plurality of data column planes or in a column of the extra column plane as part of the access operation.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Nov 8, 2023
From: SMITH, SCOTT E.; AYYAPUREDDI, SUJEET
To: MICRON TECHNOLOGY, INC.
Reel/Frame 065494/0259 →
Continuity (2)
Provisional Application 63383865 · Nov 15, 2022
Related Publication 20240170088A1 · May 23, 2024
References Cited (211)
US 5434814A · Cho et al. · 1995 [cited by applicant]
US 6249476B1 · Yamazaki et al. · 2001 [cited by applicant]
US 7117421B1 · Danilak · 2006 [cited by applicant]
US 9158617B2 · Cho et al. · 2015 [cited by applicant]
US 9361960B2 · Vogelsang · 2016 [cited by applicant]
US 9607679B1 · Kim et al. · 2017 [cited by applicant]
US 9880901B2 · Zastrow · 2018 [cited by applicant]
US 9996799B2 · Bostick et al. · 2018 [cited by applicant]
US 10127101B2 · Halbert et al. · 2018 [cited by applicant]
US 10222989B1 · Zitlaw · 2019 [cited by applicant]
US 10243590B1 · Seshadri · 2019 [cited by applicant]
US 10810079B2 · Halbert et al. · 2020 [cited by applicant]
US 10817371B2 · Rooney et al. · 2020 [cited by applicant]
US 10872011B2 · Bains et al. · 2020 [cited by applicant]
US 10929033B2 · Meeker et al. · 2021 [cited by applicant]
US 10937517B1 · Rich-Plotkin et al. · 2021 [cited by applicant]
US 11074126B2 · Prather et al. · 2021 [cited by applicant]
US 11088710B2 · Lee et al. · 2021 [cited by applicant]
US 11200961B1 · Uribe · 2021 [cited by examiner]
US 11264085B1 · Ware et al. · 2022 [cited by applicant]
US 11538515B2 · Ji et al. · 2022 [cited by applicant]
US 11579971B2 · Ayyapureddi · 2023 [cited by applicant]
US 11615861B2 · Kim et al. · 2023 [cited by applicant]
US 12001707B2 · Boehm et al. · 2024 [cited by applicant]
US 12014797B2 · Ayyapureddi · 2024 [cited by applicant]
US 12019513B2 · Ayyapureddi · 2024 [cited by applicant]
US 12204410B2 · Sutera et al. · 2025 [cited by applicant]
US 12204770B2 · Ayyapureddi · 2025 [cited by applicant]
US 12230347B2 · Suh et al. · 2025 [cited by applicant]
US 12249393B2 · Reohr · 2025 [cited by applicant]
US 20030081492A1 · Farrell et al. · 2003 [cited by applicant]
US 20060233030A1 · Choi · 2006 [cited by applicant]
US 20080089129A1 · Lee · 2008 [cited by applicant]
US 20080313493A1 · Roohparvar et al. · 2008 [cited by applicant]
US 20090097348A1 · Minzoni et al. · 2009 [cited by applicant]
US 20090132876A1 · Freking et al. · 2009 [cited by applicant]
US 20090168523A1 · Shirakawa et al. · 2009 [cited by applicant]
US 20090196103A1 · Kim et al. · 2009 [cited by applicant]
US 20100177582A1 · Kim et al. · 2010 [cited by applicant]
US 20100177587A1 · Huang · 2010 [cited by applicant]
US 20100290146A1 · Lam · 2010 [cited by applicant]
US 20110154158A1 · Yurzola et al. · 2011 [cited by applicant]
US 20130117630A1 · Kang · 2013 [cited by applicant]
US 20140126300A1 · Takahashi et al. · 2014 [cited by applicant]
US 20150193464A1 · Kwon et al. · 2015 [cited by applicant]
US 20150262631A1 · Shimizu · 2015 [cited by applicant]
US 20160070507A1 · Hoshikawa et al. · 2016 [cited by applicant]
US 20160092307A1 · Bonen et al. · 2016 [cited by applicant]
US 20160125920A1 · Kim et al. · 2016 [cited by applicant]
US 20160307645A1 · Kim et al. · 2016 [cited by applicant]
US 20170060681A1 · Halbert et al. · 2017 [cited by applicant]
US 20170062067A1 · Yang et al. · 2017 [cited by applicant]
US 20170091025A1 · Ahn et al. · 2017 [cited by applicant]
US 20170192843A1 · Warnes et al. · 2017 [cited by applicant]
US 20170249097A1 · Eguchi · 2017 [cited by applicant]
US 20170269992A1 · Bandic et al. · 2017 [cited by applicant]
US 20170285990A1 · Chen et al. · 2017 [cited by applicant]
US 20170286213A1 · Li · 2017 [cited by applicant]
US 20170344423A1 · Hsiao et al. · 2017 [cited by applicant]
US 20180025760A1 · Mazumder et al. · 2018 [cited by applicant]
US 20180121283A1 · Plants · 2018 [cited by applicant]
US 20180150350A1 · Cha et al. · 2018 [cited by applicant]
US 20190066816A1 · Dono · 2019 [cited by applicant]
US 20190103154A1 · Cox et al. · 2019 [cited by applicant]
US 20190197171A1 · Tiwari et al. · 2019 [cited by applicant]
US 20190206478A1 · Jun · 2019 [cited by applicant]
US 20190362792A1 · Oh et al. · 2019 [cited by applicant]
US 20190369893A1 · Ross · 2019 [cited by applicant]
US 20200019462A1 · Prather et al. · 2020 [cited by applicant]
US 20200051616A1 · Cho · 2020 [cited by applicant]
US 20200104205A1 · Noguchi et al. · 2020 [cited by applicant]
US 20200104208A1 · Heo et al. · 2020 [cited by applicant]
US 20200194050A1 · Akamatsu · 2020 [cited by applicant]
US 20200226039A1 · Lee · 2020 [cited by applicant]
US 20200373941A1 · Latorre et al. · 2020 [cited by applicant]
US 20210011645A1 · Martinelli et al. · 2021 [cited by applicant]
US 20210012817A1 · Laurent et al. · 2021 [cited by applicant]
US 20210012849A1 · Kim et al. · 2021 [cited by applicant]
US 20210057003A1 · Prather et al. · 2021 [cited by applicant]
US 20210064119A1 · Mirichigni et al. · 2021 [cited by applicant]
US 20210064282A1 · He et al. · 2021 [cited by applicant]
US 20210064461A1 · Veches · 2021 [cited by applicant]
US 20210064467A1 · Buerkle et al. · 2021 [cited by applicant]
US 20210083687A1 · Lee · 2021 [cited by examiner]
US 20210142848A1 · Lim et al. · 2021 [cited by applicant]
US 20210142860A1 · Song et al. · 2021 [cited by applicant]
US 20210200630A1 · Ishikawa et al. · 2021 [cited by applicant]
US 20210208967A1 · Cha et al. · 2021 [cited by applicant]
US 20210224155A1 · Bains · 2021 [cited by examiner]
US 20210247910A1 · Kim et al. · 2021 [cited by applicant]
US 20210272627A1 · Lee · 2021 [cited by applicant]
US 20210294692A1 · Chen · 2021 [cited by applicant]
US 20210311821A1 · Ryu et al. · 2021 [cited by applicant]
US 20210311822A1 · Jannusch et al. · 2021 [cited by applicant]
US 20210311830A1 · Lee · 2021 [cited by applicant]
US 20210357287A1 · Kim et al. · 2021 [cited by applicant]
US 20210358559A1 · Suh et al. · 2021 [cited by applicant]
US 20210365316A1 · Nale et al. · 2021 [cited by applicant]
US 20210406123A1 · Nakanishi et al. · 2021 [cited by applicant]
US 20220027090A1 · Kwon et al. · 2022 [cited by applicant]
US 20220035529A1 · Bennett · 2022 [cited by applicant]
US 20220084565A1 · Prather et al. · 2022 [cited by applicant]
US 20220091938A1 · Buerkle et al. · 2022 [cited by applicant]
US 20220129196A1 · Roberts et al. · 2022 [cited by applicant]
US 20220138065A1 · Secatch et al. · 2022 [cited by applicant]
US 20220197739A1 · Ryu et al. · 2022 [cited by applicant]
US 20220261310A1 · Ishikawa et al. · 2022 [cited by applicant]
US 20220334917A1 · Veches · 2022 [cited by applicant]
US 20220337271A1 · Hanna · 2022 [cited by applicant]
US 20220365692A1 · Vankamamidi et al. · 2022 [cited by applicant]
US 20220398042A1 · Song et al. · 2022 [cited by applicant]
US 20220415398A1 · Lien et al. · 2022 [cited by applicant]
US 20230146549A1 · Lien et al. · 2023 [cited by applicant]
US 20230161665A1 · Choi et al. · 2023 [cited by applicant]
US 20230185665A1 · Ayyapureddi · 2023 [cited by applicant]
US 20230223096A1 · Bains et al. · 2023 [cited by applicant]
US 20230289072A1 · Cho et al. · 2023 [cited by applicant]
US 20230298682A1 · Suh et al. · 2023 [cited by applicant]
US 20230350581A1 · Ayyapureddi · 2023 [cited by applicant]
US 20230350748A1 · Ayyapureddi · 2023 [cited by applicant]
US 20230352064A1 · Ayyapureddi · 2023 [cited by applicant]
US 20230352112A1 · Ayyapureddi · 2023 [cited by applicant]
US 20240079074A1 · Bak et al. · 2024 [cited by applicant]
US 20240086520A1 · Kaplan et al. · 2024 [cited by applicant]
US 20240096404A1 · Cho et al. · 2024 [cited by applicant]
US 20240126438A1 · Suh et al. · 2024 [cited by applicant]
US 20240160351A1 · Ayyapureddi et al. · 2024 [cited by applicant]
US 20240160524A1 · Ayyapureddi et al. · 2024 [cited by applicant]
US 20240160527A1 · Ayyapureddi et al. · 2024 [cited by applicant]
US 20240161855A1 · Smith · 2024 [cited by examiner]
US 20240161856A1 · Smith · 2024 [cited by examiner]
US 20240161859A1 · Ayyapureddi et al. · 2024 [cited by applicant]
US 20240176699A1 · Ayyapureddi et al. · 2024 [cited by applicant]
US 20240177794A1 · Vogelsang · 2024 [cited by applicant]
US 20240248796A1 · Ayyapureddi · 2024 [cited by applicant]
US 20240256380A1 · Ayyapureddi · 2024 [cited by applicant]
US 20240256382A1 · Ayyapureddi · 2024 [cited by applicant]
US 20240272979A1 · Ayyapureddi · 2024 [cited by applicant]
US 20240272984A1 · Ayyapureddi · 2024 [cited by applicant]
US 20240273014A1 · Ayyapureddi · 2024 [cited by applicant]
US 20240274223A1 · Ayyapureddi · 2024 [cited by applicant]
US 20240281327A1 · Ayyapureddi et al. · 2024 [cited by applicant]
US 20240289266A1 · Ayyapureddi · 2024 [cited by applicant]
US 20240321328A1 · Ayyapureddi · 2024 [cited by applicant]
US 20240377952A1 · Song et al. · 2024 [cited by applicant]
US 20240394178A1 · Partsch · 2024 [cited by applicant]
US 20240419538A1 · Huang et al. · 2024 [cited by applicant]
US 20250077103A1 · Ayyapureddi · 2025 [cited by applicant]
US 20250077424A1 · Ayyapureddi · 2025 [cited by applicant]
US 20250078906A1 · Kim et al. · 2025 [cited by applicant]
US 20250078949A1 · Ayyapureddi · 2025 [cited by applicant]
US 20250078950A1 · Ayyapureddi · 2025 [cited by applicant]
US 20250110643A1 · Ayyapureddi · 2025 [cited by applicant]
US 20250110825A1 · Ayyapureddi · 2025 [cited by applicant]
US 20250110830A1 · Ayyapureddi · 2025 [cited by applicant]
US 20250111887A1 · Ayyapureddi · 2025 [cited by applicant]
US 20250112643A1 · Ayyapureddi · 2025 [cited by applicant]
US 20250123924A1 · Ayyapureddi et al. · 2025 [cited by applicant]
US 20250138940A1 · Cho et al. · 2025 [cited by applicant]
US 20250156087A1 · Ayyapureddi · 2025 [cited by applicant]
WO 2016048634A1 · 2016 [cited by applicant]
WO 2024107367A1 · 2024 [cited by applicant]
WO 2024107503A1 · 2024 [cited by applicant]
WO 2024107504A1 · 2024 [cited by applicant]
WO 2024167711A1 · 2024 [cited by applicant]
WO 2025053912A1 · 2025 [cited by applicant]
WO 2025075696A1 · 2025 [cited by applicant]
WO 2025075697A1 · 2025 [cited by applicant]
U.S. Appl. No. 18/734,189, titled “Apparatuses, Systems, and Methods for Managing Metadata Storage At a Memory” filed Jun. 5, 2024, pp. all pages of application as filed. [cited by applicant]
U.S. Appl. No. 18/743,994 titled “Apparatuses and Methods for Shared Codeword in 2-Pass Access Operations” filed Jun. 14, 2024, pp. all pages of the application as filed. [cited by applicant]
U.S. Appl. No. 18/745,577 titled “Apparatuses and Methods for Half-Page Modes of Memory Devices” filed Jun. 17, 2024, pp. all pages of the application as filed. [cited by applicant]
U.S. Appl. No. 18/745,843 titled “Apparatuses and Methods for Half-Page Modes of Memory Devices” filed Jun. 17, 2024, pp. all pages of the application as filed. [cited by applicant]
U.S. Appl. No. 18/745,877 titled “Apparatuses and Methods for Half-Page Modes of Memory Devices” filed Jun. 17, 2024, pp. all pages of the application as filed. [cited by applicant]
U.S. Appl. No. 18/745,894 titled “Apparatuses and Methods for Half-Page Modes of Memory Devices” filed Jun. 17, 2024, pp. all pages of the application as filed. [cited by applicant]
U.S. Appl. No. 18/747,658, titled “Apparatuses and Methods for Bounded Fault Compliant Metadata Storage” filed, pp. all pages of application as filed. [cited by applicant]
U.S. Appl. No. 18/747,676, titled “Apparatuses and Methods for Alternate Memory Die Metadata Storage”, filed Jun. 19, 2024, pp. all pages of application as filed. [cited by applicant]
U.S. Appl. No. 18/747,696, titled “Apparatuses and Methods for Scalable 1-Pass Error Correction Code Operations”, filed Jun. 19, 2024, pp. all pages of application as filed. [cited by applicant]
U.S. Appl. No. 18/747,712, titled “Apparatuses and Methods for Granular Single-Pass Metadata Access Operations” filed Jun. 19, 2024, pp. all pages of application as filed. [cited by applicant]
U.S. Appl. No. 18/747,635, titled “Apparatuses and Methods for Read/Modify/Write Single-Pass Metadata Access Operations” filed Jun. 19, 2024, pp. all pages of application as filed. [cited by applicant]
PCT Application No. PCT/US24/39192 titled “Apparatuses and Methods for Scalable 1-Pass Error Correction Code Operations” filed Jul. 23, 2024, pp. all pages of the application as filed. [cited by applicant]
PCT Application No. PCT/US24/39195 titled “Apparatuses and Methods for Half-Page Modes of Memory Devices” filed Jul. 23, 2024, pp. all pages of the application as filed. [cited by applicant]
PCT Application No. PCT/US24/39231 titled “Apparatuses and Methods for Granular Single-Pass Metadata Access Operations” filed Jul. 24, 2024, pp. all pages of the application as filed. [cited by applicant]
PCT Application No. PCT/US23/76430 titled “Apparatuses and Methods for Separate Write Enable for Single-Pass Access of Data, Metadata, and Parity Information” filed Oct. 10, 2023, pp. all pages of application as filed. [cited by applicant]
PCT Application No. PCT/US23/76433 titled “Apparatuses and Methods for Single-Pass Access of ECC Information, Metadata Information or Combinations Thereof” filed Oct. 10, 2023; pp. all pages of application as filed. [cited by applicant]
PCT Application No. PCT/US24/13516, titled “Apparatuses, Systems, and Methods for Storing Memory Metadata” filed Jan. 30, 2024; pp. all pages of application as filed. [cited by applicant]
U.S. Appl. No. 17/730,381, titled “Apparatuses, Systems, and Methods for Per Row Error Scrub Information”, filed Apr. 27, 2022; pp. all pages of application as filed. [cited by applicant]
U.S. Appl. No. 17/731,024, titled “Apparatuses, Systems, and Methods for Managing Metadata Storage At a Memory”, filed Apr. 27, 2022; pp. all pages of the application as filed. [cited by applicant]
U.S. Appl. No. 18/424,282 titled “Apparatuses and Methods for Bounded Fault Compliant Metadata Storage” filed Jan. 26, 2024; pp. all pages of application as filed. [cited by applicant]
U.S. Appl. No. 18/424,342 titled “Apparatuses and Methods for Bounded Fault Compliant Metadata Storage” filed Jan. 26, 2024; pp. all pages of application as filed. [cited by applicant]
U.S. Appl. No. 18/430,381, titled “Apparatuses, Systems, and Methods for Storing Memory Metadata”, filed Feb. 1, 2024; pp. all pages of application as filed. [cited by applicant]
U.S. Appl. No. 18/430,406, titled “Apparatuses, Systems, and Methods for Storing Memory Metadata”, filed Feb. 1, 2024; pp. all pages of application as filed. [cited by applicant]
U.S. Appl. No. 18/431,232, titled “Apparatuses, Systems, and Methods for Storing Memory Metadata”, filed Feb. 2, 2024; pp. all pages of application as filed. [cited by applicant]
U.S. Appl. No. 18/431,306, titled “Apparatuses, Systems, and Methods for Storing Memory Metadata”, filed Feb. 2, 2024; pp. all pages of application as filed. [cited by applicant]
U.S. Appl. No. 18/504,215 titled “Apparatuses and Methods for Enhanced Metadata Support” filed Nov. 8, 2023; pp. all pages of application as filed. [cited by applicant]
U.S. Appl. No. 18/504,234 titled “Apparatuses and Methods for Enhanced Metadata Support” filed Nov. 8, 2023; pp. all pages of application as filed. [cited by applicant]
U.S. Appl. No. 18/504,316 titled “Apparatuses and Methods for Configurable ECC Modes” filed Nov. 8, 2023; all pages of application as filed. [cited by applicant]
U.S. Appl. No. 18/504,324 titled “Apparatuses and Methods for Single-Pass Access of ECC Information, Metadata Information or Combinations Thereof”, filed Nov. 8, 2023, all pages of application as filed. [cited by applicant]
U.S. Appl. No. 18/504,342 titled “Apparatuses and Methods for Single-Pass Access of ECC Information, Metadata Information or Combinations Thereof” filed Nov. 8, 2023; pp. all pages of application as filed. [cited by applicant]
U.S. Appl. No. 18/504,353 titled “Apparatuses and Methods for Separate Write Enable for Single-Pass Accessof Data, Metadata, and Parity Information” filed Nov. 8, 2023; pp. all pages of application as filed. [cited by applicant]
U.S. Appl. No. 18/504,362 titled “Apparatuses and Methods for Separate Write Enable for Single-Pass Access of Data, Metadata, and Parity Information” filed Nov. 8, 2023; pp. all pages of application as filed. [cited by applicant]
U.S. Appl. No. 17/730,396, titled “Apparatuses, Systems, and Methods for Per Row Error Scrub Information Registers”, filed Apr. 27, 2022; pp. all pages of application as filed. [cited by applicant]
U.S. Appl. No. 17/730,992 titled “Mode Register for Blocking Direct Access To Meta Data” filed Apr. 27, 2022, pp. all pages of application as filed. [cited by applicant]
U.S. Appl. No. 17/731,024 titled “Apparatuses, Systems, and Methods for Managing Metadata Storage At a Memory” filed Apr. 27, 2022, Kne. [cited by applicant]
U.S. Appl. No. 17/730,992 titled “Apparatuses, Systems, and Methods for Managing Metadata Security and Access” filed Apr. 27, 2022, Kne. [cited by applicant]
U.S. Appl. No. 18/441,775 titled “Apparatuses and Methods for Settings for Adjustable Write Timing” filed Feb. 14, 2024, pp. all pages of the application as filed. [cited by applicant]
U.S. Appl. No. 18/441,830 titled “Apparatuses, Systems, and Methods for Storing and Accessing Memory Metadata and Error Correction Code Data” filed Feb. 14, 2024, pp. all pages of the application as filed. [cited by applicant]
U.S. Appl. No. 18/625,539, titled “Apparatuses, Systems, and Methods for Per Row Error Scrub Information” filed Apr. 3, 2024, upp. all pages of application as filed. [cited by applicant]
U.S. Appl. No. 19/025,934, titled “Apparatuses, Systems, and Methods for Managing Metadata Security and Access” filed Jan. 16, 2025, pp. all pages of application as filed. [cited by applicant]
Chen et al., “CATCAM: Constant-time Alteration Ternary CAM with Scalable In-Memory Architecture”; 2020 53rd Annual IEEE/ACM International Symposium on Microarchitecture (MICRO), Athens, Green; Oct. 17-21, 2020; pp. 342-… [cited by applicant]
J. F. Philippe Marchand “An Alterable Programmable Logic Array”; IEEE Journal of Solid-State Circuits, vol. sc-20, No. 5, Oct. 1985; pp. 1061-1066. [cited by applicant]
Lumenci Team “High Bandwidth Memory (HBM3)” https://lumenci.com/blogs/high-bandwidth-memory; Editorial Team at Lumenci, Jul. 14, 2022; pp. 1-3. [cited by applicant]
Cited By (6)
US 12,613,774 US 12,646,583 US 12,664,050 US 12,669,935 US 12,699,629 US 12,712,047