Apparatuses, systems, and methods for storing and accessing memory metadata and error correction code data
A bank of a memory device is divided into column planes. Each column plane is associated with column selects. A portion of a column plane associated with one column select used to store metadata associated with data of the remaining column selects. Both the metadata and the data are provided to an error correction code circuit as a combined code word that provides error correction for both the data and the metadata.
1 . An apparatus comprising:
a memory device comprising:
a memory array comprising:
a plurality of column planes, wherein a first portion of individual ones of the plurality of planes are configured to store metadata and a second portions of individual ones of the plurality of planes are configured to store data; and
an additional column plane configured to store ECC data,
wherein the metadata, the ECC data are associated with the data associated with the second portions of the individual ones of the plurality of column planes; and
an error correction code (ECC) circuit configured to receive and perform ECC operations on the metadata, the data, the ECC data, or a combination thereof.
2 . The apparatus of claim 1 , further comprising a buffer configured to receive the metadata from the memory array and provide the metadata to the ECC circuit.
3 . The apparatus of claim 1 , wherein cach of the plurality of column planes receives a plurality of column select signals.
4 . The apparatus of claim 3 , wherein a first portion of the plurality of column select signals are configured to activate the first portions of the individual ones of the plurality of column planes configured to store the metadata and a second portion of the plurality of column select signals are configured to activate the second portions of the individual ones of the plurality of column planes configured to store the data, wherein the first portion of the plurality of column select signals and the second portion of the plurality of column select signals are mutually exclusive.
5 . The apparatus of claim 4 , wherein the first portion of the plurality of column select signals comprises four column select signals and the second portion of the plurality of column select signals comprises sixty column select signals; or
the first portion of the plurality of column select signals comprises eight column select signals and the second portion of the plurality of column select signals comprises fifty-six column select signals.
6 . The apparatus of claim 1 , wherein the ECC circuit receives eight bits of metadata or sixteen bits of metadata.
7 . A method comprising:
receiving a column address at a memory device;
receiving a read command associated with the column address at the memory device;
activating a first column select signal of a first column plane of a memory array of the memory device, wherein the first column select signal and the first column plane is based, at least in part, on the column address;
retrieving from memory cells of the first column plane associated with the first column select signal, a plurality of metadata bits;
activating a second column select signal of a plurality of column planes of the memory array, wherein the second column select signal is based, at least in part, on the column address;
retrieving from memory cells of the plurality of column planes associated with the second column select signal, a plurality of data bits;
activating a third column select signal of a second column plane of the memory array; and
retrieving from memory cells of the second column plane associated with the third column select signal a plurality of error correction code (ECC) data bits.
8 . The method of claim 7 , further comprising storing the plurality of metadata bits in a buffer of the memory device.
9 . The method of claim 7 , further comprising:
providing the plurality of metadata bits, the plurality of data bits, and the plurality of ECC data bits to an ECC circuit;
performing ECC operations on the plurality of metadata bits, the plurality of data bits, and the plurality of ECC data bits, wherein performing the ECC operations comprises correcting an error in the plurality of metadata bits, the plurality of data bits, or the plurality of ECC data bits; and
providing the plurality of metadata bits and the plurality of data bits from the ECC circuit, wherein at least one of the plurality of metadata bits or the plurality of data bits is modified when the error is corrected.
10 . The method of claim 9 , wherein the plurality of data bits and the plurality of ECC data bits are provided from the memory array to the ECC circuit and the plurality of metadata bits are provided from a buffer to the ECC circuit.
11 . A method comprising:
receiving a column address at a memory device;
receiving a read command associated with the column address at the memory device;
activating a first column select signal of a first column plane of a memory array of the memory device, wherein the first column select signal and the first column plane is based, at least in part, on the column address;
retrieving from memory cells of the first column plane associated with the first column select signal, a plurality of metadata bits;
activating a second column select signal of a plurality of column planes of the memory array, wherein the second column select signal is based, at least in part, on the column address;
retrieving from memory cells of the plurality of column planes associated with the second column select signal, a plurality of data bits;
activating a third column select signal of a second column plane of the memory array; and
retrieving from memory cells of the second column plane associated with the third column select signal a plurality of error correction code (ECC) data bits;
activating a fourth column select signal of a third column plane of the memory array of the memory device; and
retrieving from memory cells of the third column plane associated with the fourth column select signal, a second plurality of metadata bits.
12 . The method of claim 11 , wherein the fourth column select signal and the first column select signal are a same column select signal and the second column select signal and the third column select signal are a same column select signal.
13 . The method of claim 11 , further comprising:
providing the plurality of metadata bits, the second plurality of metadata bits, the plurality of data bits, and the plurality of ECC data bits to an ECC circuit;
performing ECC operations on the plurality of metadata bits, the second plurality of metadata bits, the plurality of data bits, and the plurality of ECC data bits, wherein performing ECC operations comprises correcting an error in the plurality of metadata bits, the plurality of data bits, or the plurality of ECC data bits; and
providing the plurality of metadata bits, the second plurality of metadata bits, and the plurality of data bits from the ECC circuit.
14 . The method of claim 8 , wherein the plurality of metadata bits is retrieved from the memory array prior to retrieving the plurality of data bits from the memory array.
15 . A method comprising:
receiving a column address at a memory device,
receiving a write command associated with the column address at the memory device;
receiving a plurality of data bits and a plurality of metadata bits at an error correction code (ECC) circuit of the memory device;
generating, with the ECC circuit, a plurality of ECC data bits based, at least in part, on the plurality of data bits and the plurality of metadata bits;
activating a first column select signal of a plurality of column planes of a memory array, wherein the first column select signal is based, at least in part, on the column address;
writing to memory cells of the plurality of column planes associated with the first column select signal, the plurality of data bits;
activating a second column select signal of a first column plane of the memory array; and
writing to memory cells of the first column plane associated with the second column select signal the plurality of ECC data bits;
activating a third column select signal of a second column plane of the memory array of the memory device, wherein the third column select signal and the second column plane is based, at least in part, on the column address; and
writing to memory cells of the second column plane associated with the third column select signal, the plurality of metadata bits.
16 . The method of claim 15 , further comprising storing the plurality of metadata bits in a buffer of the memory device.
17 . The method of claim 15 , wherein the plurality of data bits are written to the memory array before the plurality of metadata bits are written to the memory array.
18 . The method of claim 15 , wherein the first column select signal, the second column select signal, and the third column select signal are included in a plurality of sixty-four column select signals, and the first column plane, the second column plane, and the plurality of column planes are included in a plurality of seventeen column planes, wherein four column selects or eight column selects of the plurality of sixty-four column select signalss are associated with memory cells configured to store the plurality of metadata bits.
19 . The method of claim 18 , wherein activating the third column select signal further comprises activating a third column plane of the memory array of the memory device; and
wherein writing the plurality of metadata bits comprises writing a portion of the plurality of metadata bits to memory cells of the third column plane associated with the third column select signal.
20 . The method of claim 15 , wherein the plurality of ECC data bits are written to the memory array concurrently with writing the plurality of data bits to the memory array.