US 4219829A
· Dorda et al.
· 1980
[cited by applicant]
US 4987090A
· Hsu et al.
· 1991
[cited by applicant]
US 5029130A
· Yeh
· 1991
[cited by applicant]
US 5586073A
· Hiura et al.
· 1996
[cited by applicant]
US 5963803A
· Dawson et al.
· 1999
[cited by applicant]
US 6034882A
· Johnson et al.
· 2000
[cited by applicant]
US 6107882A
· Gabara et al.
· 2000
[cited by applicant]
US 6313486B1
· Kencke et al.
· 2001
[cited by applicant]
US 6385097B1
· Liao et al.
· 2002
[cited by applicant]
US 6486027B1
· Noble et al.
· 2002
[cited by applicant]
US 6593624B2
· Walker
· 2003
[cited by applicant]
US 6829598B2
· Milev
· 2004
[cited by applicant]
US 6856542B2
· Roy et al.
· 2005
[cited by applicant]
US 6906940B1
· Lue
· 2005
[cited by applicant]
US 6960499B2
· Nandakumar et al.
· 2005
[cited by applicant]
US 7081377B2
· Cleeves
· 2006
[cited by applicant]
US 7089218B1
· Visel
· 2006
[cited by applicant]
US 7129538B2
· Lee et al.
· 2006
[cited by applicant]
US 7177169B2
· Scheuerlein
· 2007
[cited by applicant]
US 7368358B2
· Ouyang et al.
· 2008
[cited by applicant]
US 7436723B2
· Rinerson et al.
· 2008
[cited by applicant]
US 7593908B2
· Abdulkader et al.
· 2009
[cited by applicant]
US 7646041B2
· Chae et al.
· 2010
[cited by applicant]
US 7747668B2
· Nomura et al.
· 2010
[cited by applicant]
US 7948024B2
· Kim et al.
· 2011
[cited by applicant]
US 8045355B2
· Ueda
· 2011
[cited by applicant]
US 8154128B2
· Lung
· 2012
[cited by applicant]
US 8203187B2
· Lung et al.
· 2012
[cited by applicant]
US 8275728B2
· Pin
· 2012
[cited by applicant]
US 8331149B2
· Choi et al.
· 2012
[cited by applicant]
US 8432719B2
· Lue
· 2013
[cited by applicant]
US 8564045B2
· Liu
· 2013
[cited by applicant]
US 8589320B2
· Breitwisch et al.
· 2013
[cited by applicant]
US 8630114B2
· Lue
· 2014
[cited by applicant]
US 8725670B2
· Visel
· 2014
[cited by applicant]
US 8860124B2
· Lue et al.
· 2014
[cited by applicant]
US 9064903B2
· Mitchell et al.
· 2015
[cited by applicant]
US 9111617B2
· Shim et al.
· 2015
[cited by applicant]
US 9147468B1
· Lue
· 2015
[cited by applicant]
US 9177966B1
· Rabkin et al.
· 2015
[cited by applicant]
US 9213936B2
· Visel
· 2015
[cited by applicant]
US 9379129B1
· Lue et al.
· 2016
[cited by applicant]
US 9391084B2
· Lue
· 2016
[cited by applicant]
US 9397110B2
· Lue
· 2016
[cited by applicant]
US 9401371B1
· Lee et al.
· 2016
[cited by applicant]
US 9430735B1
· Vali et al.
· 2016
[cited by applicant]
US 9431099B2
· Lee et al.
· 2016
[cited by applicant]
US 9520485B2
· Lue
· 2016
[cited by applicant]
US 9524980B2
· Lue
· 2016
[cited by applicant]
US 9535831B2
· Jayasena et al.
· 2017
[cited by applicant]
US 9536969B2
· Yang et al.
· 2017
[cited by applicant]
US 9589982B1
· Cheng et al.
· 2017
[cited by applicant]
US 9698156B2
· Lue
· 2017
[cited by applicant]
US 9698185B2
· Chen et al.
· 2017
[cited by applicant]
US 9710747B2
· Kang et al.
· 2017
[cited by applicant]
US 9747230B2
· Han et al.
· 2017
[cited by applicant]
US 9754953B2
· Tang et al.
· 2017
[cited by applicant]
US 9767028B2
· Cheng et al.
· 2017
[cited by applicant]
US 9898207B2
· Kim et al.
· 2018
[cited by applicant]
US 9910605B2
· Jayasena et al.
· 2018
[cited by applicant]
US 9922716B2
· Hsiung et al.
· 2018
[cited by applicant]
US 9978454B2
· Jung
· 2018
[cited by applicant]
US 9983829B2
· Ravimohan et al.
· 2018
[cited by applicant]
US 9991007B2
· Lee et al.
· 2018
[cited by applicant]
US 10942673B2
· Shafiee Ardestani et al.
· 2021
[cited by applicant]
US 20030122181A1
· Wu
· 2003
[cited by applicant]
US 20050287793A1
· Blanchet et al.
· 2005
[cited by applicant]
US 20110063915A1
· Tanaka et al.
· 2011
[cited by applicant]
US 20110140070A1
· Kim
· 2011
[cited by applicant]
US 20110297912A1
· Samachisa et al.
· 2011
[cited by applicant]
US 20120044742A1
· Narayanan
· 2012
[cited by applicant]
US 20140149773A1
· Huang et al.
· 2014
[cited by applicant]
US 20150171106A1
· Suh
· 2015
[cited by applicant]
US 20160141337A1
· Shimabukuro et al.
· 2016
[cited by applicant]
US 20170287928A1
· Kanamori et al.
· 2017
[cited by applicant]
US 20180144240A1
· Garbin et al.
· 2018
[cited by applicant]
US 20190050714A1
· Nosko et al.
· 2019
[cited by applicant]
US 20190244662A1
· Lee et al.
· 2019
[cited by applicant]
US 20190311749A1
· Song et al.
· 2019
[cited by applicant]
US 20190363131A1
· Torng et al.
· 2019
[cited by applicant]
US 20210209468A1
· Matsumoto et al.
· 2021
[cited by applicant]
US 20230153587A1
· Vogelsang
· 2023
[cited by examiner]
CN 101432821A
· 2009
[cited by applicant]
CN 1998012B
· 2010
[cited by applicant]
CN 103778468A
· 2014
[cited by applicant]
CN 105718994A
· 2016
[cited by applicant]
CN 105789139A
· 2016
[cited by applicant]
CN 106530210A
· 2017
[cited by applicant]
CN 106815515A
· 2017
[cited by applicant]
CN 107077879A
· 2017
[cited by applicant]
CN 107368892A
· 2017
[cited by applicant]
CN 107533459A
· 2018
[cited by applicant]
CN 107767905A
· 2018
[cited by applicant]
CN 108268946A
· 2018
[cited by applicant]
CN 110598752A
· 2019
[cited by applicant]
EP 2048709A2
· 2009
[cited by applicant]
JP H0451382A
· 1992
[cited by applicant]
JP 2006127623A
· 2006
[cited by applicant]
JP 2009080892A
· 2009
[cited by applicant]
TW 201108230A
· 2011
[cited by applicant]
TW 201523838A
· 2015
[cited by applicant]
TW 201618284A
· 2016
[cited by applicant]
TW 201639206A
· 2016
[cited by applicant]
TW 201715525A
· 2017
[cited by applicant]
TW 201732824A
· 2017
[cited by applicant]
TW 201741943A
· 2017
[cited by applicant]
TW 201802800A
· 2018
[cited by applicant]
TW 201807807A
· 2018
[cited by applicant]
TW 201822203A
· 2018
[cited by applicant]
TW 201939717A
· 2019
[cited by applicant]
TW 202004573A
· 2020
[cited by applicant]
TW 202011285A
· 2020
[cited by applicant]
TW 202046179A
· 2020
[cited by applicant]
TW 202103307A
· 2021
[cited by applicant]
TW 202122994A
· 2021
[cited by applicant]
TW 202129509A
· 2021
[cited by applicant]
WO 2012009179A1
· 2012
[cited by applicant]
WO 2012015450A1
· 2012
[cited by applicant]
WO 2016060617A1
· 2016
[cited by applicant]
WO 2016084336A1
· 2016
[cited by applicant]
WO 2017091338A1
· 2017
[cited by applicant]
WO 2018201060A1
· 2018
[cited by applicant]
Goplen et al., “Placement of 3D ICs with Thermal and Interlayer Via Considerations,” 2007 44th ACM/IEEE Design Automation Conference, Jun. 4-8, 2007, pp. 626-631.
[cited by applicant]
Tanaka et al., “Through-Silicon via Interconnection for 3D Integration Using Room-Temperature Bonding,” in IEEE Transactions on Advanced Packaging, vol. 32, No. 4, Nov. 2009, pp. 746-753.
[cited by applicant]
Temiz, et al., “Post-CMOS Processing and 3-D Integration Based on Dry-Film Lithography,” in IEEE Transactions on Components, Packaging and Manufacturing Technology, vol. 3, No. 9, Sep. 2013, pp. 1458-1466.
[cited by applicant]
TW Exam Report from 110137775 family member application, English Machine Translation, dated May 18, 2022, 7 pages.
[cited by applicant]
Anonymous, “Data in the Computer”, May 11, 2015, pp. 1-8, https://web.archive.org/web/20150511143158/https://homepage.cs.uri .edu/faculty/wolfe/book/Readings/Reading02.htm (Year: 2015)—See Office Action dated Aug. 17, 2…
[cited by applicant]
Aritome, et al., “Reliability issues of flash memory cells,” Proc. of the IEEE, vol. 81, No. 5, May 1993, pp. 776-788.
[cited by applicant]
Beasley, “Manufacturing Defects,” may be found at https://slideplayer.com/slide/11407304, downloaded May 20, 2020, 61 pages.
[cited by applicant]
Chen et al., “A Highly Pitch Scalable 3D Vertical Gate (VG) NAND Flash Decoded by a Novel Self-Aligned Independently Controlled Double Gate (IDG) StringSelect Transistor (SSL),” 2012 Symp. on VLSI Technology (VLSIT), Ju…
[cited by applicant]
Chen et al., “Eyeriss: An Energy-Efficient reconfigurable accelerator for deep convolutional neural networks,” IEEE ISSCC, Jan. 31-Feb. 4, 2016, 3 pages.
[cited by applicant]
Choi et al., “Performance Breakthrough in NOR Flash Memory with Dopant-Segregated Schottky-Barrier (DSSB) SONOS Device”, 2009 Symposium onVLSI Technology Digest of Technical Papers, Jun. 16-18, 2009, pp. 1-2.
[cited by applicant]
Entegris FAQ Series, “Contamination Control in Ultrapure Chemicals and Water: Fundamentals of Contamination Control,” may be found at https://www.entegris.com/en/home/resources/technical-information/faq/contamination-co…
[cited by applicant]
Fukuzumi et al. “Optimal Integration and Characteristics of Vertical Array Devices for Ultra-High Density, Bit-Cost Scalable Flash Memory,” IEEE Dec. 2007, pp. 449-452.
[cited by applicant]
Gonugondla et al., “Energy-Efficient Deep In-memory Architecture for NAND Flash Memories,” IEEE International Symposium on Circuits and Systems (ISCAS), May 27-30, 2018, 5 pages.
[cited by applicant]
Guo et al., “Fast, energy-efficient, robust, and reproducible mixed-signal neuromorphic classifier based on embedded NOR flash memory technology,” IEEE Int'l Electron Devices Mtg., San Francisco, CA, Dec. 2-6, 2017, 4 p…
[cited by applicant]
Hsu et al., “Study of Sub-30nm Thin Film Transistor (TFT) Charge-Trapping (CT) Devices for 3D NAND Flash Application,” 2009 IEEE, Dec. 7-9, 2009, pp. 27.4.1-27.4.4.
[cited by applicant]
Hubert et al., “A Stacked SONOS Technology, Up to 4 Levels and 6nm Crystalline Nanowires, With Gate-All-Around on Independent Gates (Flash), Suitable for Full 3D Integration,” IEEE 2009, Dec. 7-9, 2009, pp. 27.6.1-27.6.…
[cited by applicant]
Hung et al., “A highly scalable vertical gate (VG) 3D NAND Flash with robust program disturb immunity using a novel PN diode decoding structure,” 2011 Symp. on VLSI Technology (VLSIT), Jun. 14-16, 2011, pp. 68-69.
[cited by applicant]
IMEC Magazine, Mar. 2018, 35 pages.
[cited by applicant]
Jang et al., “Vertical Cell Array Using TCAT (Terabit Cell Array Transistor) Technology for Ultra High Density NAND Flash Memory,” 2009 Symposium on VLSI Technology Digest of Technical Papers, Jun. 16-18, 2009, pp. 192-…
[cited by applicant]
Johnson et al., “512-Mb PROM With a Three-Dimensional Array of Diode/Antifuse Memory Cells,” IEEE Journal of Solid-State Circuits, vol. 38, No. 11, Nov. 2003, pp. 1920-1928.
[cited by applicant]
Jung et al., “Three Dimensionally Stacked NAND Flash Memory Technology Using Stacking Single Crystal Si Layers on ILD and TANOS Structure for Beyond 30nm Node,” International Electron Devices Meeting, 2006. IEDM '06, De…
[cited by applicant]
Katsumata et al., “Pipe-shaped BiCS flash memory with 16 stacked layers and multi-level-cell operation for ultra high density storage devices,” 2009 Symp. on VLSI Technology, Jun. 16-18, 2009, 2 pages.
[cited by applicant]
Kim et al. “Novel Vertical-Stacked-Array-Transistor (VSAT) for Ultra-High-Density and Cost-Effective NAND Flash Memory Devices and SSD (Solid State Drive)”, Jun. 2009 Symposium on VLSI Technolgy Digest of Technical Pape…
[cited by applicant]
Kim et al., “Multi-Layered Vertical Gate NAND Flash Overcoming Stacking Limit for Terabit Density Storage,” 2009 Symposium on VLSI Technology Digest of Technical Papers, Jun. 16-18, 2009, pp. 188-189.
[cited by applicant]
Kim et al., “Novel 3-D Structure for Ultra High Density Flash Memory with VRAT (Vertical-Recess-Array-Transistor) and PIPE (Planarized Integration on the same PlanE),” IEEE 2008 Symposium on VLSI Technology Digest of Te…
[cited by applicant]
Kim et al., “Three-Dimensional NAND Flash Architecture Design Based on Single-Crystalline STacked ARray,” IEEE Transactions on Electron Devices, vol. 59, No. 1, pp. 35-45, Jan. 2012.
[cited by applicant]
Kim, “Abrasive for Chemical Mechanical Polishing. Abrasive Technology: Characteristics and Applications,” Book Abrasive Technology: Characteristics and Applications, Mar. 2018, 20 pages.
[cited by applicant]
Lai et al. “Highly Reliable MA BE-SONOS (Metal-AI203 Bandgap Engineered SONOS) Using a SiO2 Buffer Layer,” VLSI Technology, Systems and Applications 2008, VLSI-TSA International Symposium on Apr. 21-23, 2008, pp. 58-59.
[cited by applicant]
Lai et al., “A Multi-Layer Stackable Thin-Film Transistor (TFT) NAND-Type Flash Memory,” Electron Devices Meeting, 2006, IEDM '06 International, Dec. 11-13, 2006, pp. 1-4.
[cited by applicant]
Liu et al., “Parallelizing SRAM Arrays with Customized Bit-Cell for Binary Neural Networks,” 55th ACM/ESDA/IEEE Design Automation Conference (DAC), Sep. 20, 2018, 4 pages.
[cited by applicant]
Lue et al., “A Highly Scalable 8-Layer 3D Vertical-Gate (VG) TFT NAND Flash Using Junction-Free Buried Channel BE-SONOS Device”, 2010 Symposium on VLSI Technology Digest of Technical Papers, pp. 131-132, Jun. 15-17, 201…
[cited by applicant]
Lue et al., “A Novel 3D AND-type NVM Architecture Capable of High-density, Low-power In-Memory Sum-of-Product Computation for Artificial Intelligence Application,” IEEE VLSI, Jun. 18-22, 2018, 2 pages.
[cited by applicant]
Lue et al., “A Novel Buried-Channel FinFET BE-SONOS NAND Flash with Improved Memory Window and Cycling Endurance”, 2009 Symposium on VLSI Technology Digest of Technical Papers, p. 224-225.
[cited by applicant]
Meena, et al., “Overview of emerging nonvolatile memory technologies,” Nanoscale Reearch Letters 9:526, Oct. 2, 2014, 34 pages.
[cited by applicant]
Merrikh-Bayat et al., “High-Performance Mixed-Signal Neurocomputing with Nanoscale Flowting-Gate Memory Cell Arrays,” in IEEE Transactions on Neural Netowrks and Learning Systems, vol. 29, No. 10, Oct. 2018, pp. 4782-47…
[cited by applicant]
Minghao Qi, “ECE 695Q Lecture 10: Optical Lithography—Resolution Enhancement Techniques,” may be found at https://nanohub.org/resources/15325/watch?resid=24507, Spring 2016, 35 pages.
[cited by applicant]
Nowak et al., “Intrinsic fluctuations in Vertical NAND flash memories,” 2012 Symposium on VLSI Technology, Digest of Technical Papers, pp. 21-22, Jun. 12-14, 2012.
[cited by applicant]
Ohzone et al., “Ion-Implanted Thin Polycrystalline-Silicon High-Value Resistors for High-Density Poly-Load Static RAM Applications,” IEEE Trans. on Electron Devices, vol. ED-32, No. 9, Sep. 1985, 8 pages.
[cited by applicant]
Paul et al., “Impact of a Process Variation on Nanowire and Nanotube Device Performance”, IEEE Transactions on Electron Devices, vol. 54, No. 9, Sep. 2007, p. 2369-2376.
[cited by applicant]
Rincon-Mora, et al., “Bandgaps in the crosshairs: What's the trim target?” IEEE, The Georgia Tech Analog & Power IC Labroator, Oct. 18, 2006, 5 pages.
[cited by applicant]
Rod Nussbaumer, “How is data transmitted through wires in the computer?”, Aug. 27, 2015, pp. 1-3, https://www.quora.com/ How-is-data-transmitted-through-wires-in-the-computer (Year: 2015)—See Office Action dated Aug. 17…
[cited by applicant]
Sakai et al., “A Buried Giga-Ohm Resistor (BGR) Load Static RAM Cell,” IEEE Symp. on VLSI Technology, Digest of Papers, Sep. 10-12, 1984, 2 pages.
[cited by applicant]
Schuller et al., “Neuromorphic Computing: From Materials to Systems Architecture,” US Dept. of Energy, Oct. 29-30, 2015, Gaithersburg, MD, 40 pages.
[cited by applicant]
Seo et al., “A Novel 3-D Vertical FG NAND Flash Memory Cell Arrays Using the Separated Sidewall Control Gate (S-SCG) for Highly Reliable MLC Operation,” 2011 3rd IEEE International Memory Workshop (IMW), May 22-25, 2011…
[cited by applicant]
Soudry, et al. “Hebbian learning rules with memristors,” Center for Communication and Information Technologies CCIT Report #840, Sep. 1, 2013, 16 pages.
[cited by applicant]
Tanaka et al., “Bit Cost Scalable Technology with Punch and Plug Process for Ultra High Density Flash Memory,” VLSI Technology, 2007 IEEE Symposium on Jun. 12-14, 2007, pp. 14-15.
[cited by applicant]
The Nikon eReview, “KLA-Tencor Research Scientist Emphasizes Stochastic Challenges at LithoVision 2018,” may be found at https://nikonereview.com/2018/kla-tencor-research-scientist-emphasizes-stochastic-challenges-at-li…
[cited by applicant]
Wang, Michael, “Technology Trends on 3D-NAND Flash Storage”, Impact 2011, Taipei, dated Oct. 20, 2011, found at www.impact.org.tw/2011/Files/NewsFile/201111110190.pdf.
[cited by applicant]
Webopedia, “DRAM—dynamic random access memory”, Jan. 21, 2017, pp. 1-3, https://web.archive.org/web/20170121124008/https://www.webopedia.com/TERM/D/DRAM.html (Year: 2017)—See Office Action dated Aug. 17, 2020 in U.S. Ap…
[cited by applicant]
Webopedia, “SoC”, Oct. 5, 2011, pp. 1-2, https://web.archive.org/web/20111005173630/https://www.webopedia.com/ TERM/S/SoC.html (Year: 2011)—See Office Action dated Aug. 17, 2020 in U.S. Appl. No. 16/279,494 for relevanc…
[cited by applicant]
Webopedia, “volatile memory”, Oct. 9, 2017, pp. 1-4, https://web.archive.org/web/20171009201852/https://www.webopedia.com/TERMN/volatile_memory.html (Year: 2017)—See Office Action dated Aug. 17, 2020 in U.S. Appl. No. 1…
[cited by applicant]
Whang, SungJin et al. “Novel 3-dimensional Dual Control-gate with Surrounding Floating-gate (DC-SF) NAND flash cell for 1Tb file storage application,” 2010 IEEE Int'l Electron Devices Meeting (IEDM), Dec. 6-8, 2010, 4 p…
[cited by applicant]
Y.X. Liu et al., “Comparative Study of Tri-Gate and Double-Gate-Type Poly-Si Fin-Channel Spli-Gate Flash Memories,” 2012 IEEE Silicon Nanoelectronics Workshop (SNW), Honolulu, HI, Jun. 10-11, 2012, pp. 1-2 (MXIC 2261-1).
[cited by applicant]