IP Library › Granted Patent US 12,436,464
Granted Patent B2
US 12,436,464 · App. 17/995,355 · Granted Oct 7, 2025

Pre-exposure photoresist curing to enhance EUV lithographic performance

Inventors: Timothy William Weidman (Sunnyvale, CA); Kevin Li Gu (Mountain View, CA); Chenghao Wu (San Jose, CA); Katie Lynn Nardi (San Jose, CA); Boris Volosskiy (San Jose, CA)
Assignee: Lam Research Corporation
G03F7/168G03F7/0043
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Quick Facts
Patent No.
US 12,436,464
App. No.
17/995,355
Granted
Oct 7, 2025
Kind
B2
Abstract

Disclosed herein are methods and apparatuses for exposing an organic metal-oxide film to a blanket UV treatment prior to a lithographic patterning operation. A blanket UV treatment may be used to shift a solubility curve of the film, such that a lower EUV dose may be used to pattern the film. Additionally, a blanket UV treatment may be used after development to further cure the film.

Claims (35)

1. A method, comprising:

receiving in a process chamber a metal-containing photoresist on a substrate; and

treating the metal-containing photoresist by exposure to blanket UV to modify material properties of the metal-containing photoresist such that radiation sensitivity of the metal-containing photoresist is increased, wherein treating the metal-containing photoresist precedes exposing the metal-containing photoresist to EUV lithography.

2. The method of claim 1 , wherein a wavelength of the blanket UV is DUV.

3. The method of claim 1 , wherein a wavelength of the blanket UV is less than 300 nm.

4. The method of claim 3 , wherein a wavelength of the blanket UV is about 248 nm.

5. The method of claim 3 , wherein a wavelength of the blanket UV is about 193 nm.

6. The method of claim 1 , wherein an intensity of the blanket UV is between 1 and 100 mJ/cm 2 .

7. The method of claim 1 , wherein treating the metal-containing photoresist increases the sensitivity of the metal-containing photoresist to EUV radiation.

8. The method of claim 1 , wherein treating the metal-containing photoresist increases the adhesion of the metal-containing photoresist to the substrate.

9. The method of claim 1 , wherein treating the metal-containing photoresist reduces off-gassing from the metal-containing photoresist.

10. The method of claim 1 , wherein the solubility of the metal-containing photoresist changes abruptly within an EUV dose range of no more than about 2 mJ/cm 2 .

11. The method of claim 1 , wherein treating the metal-containing photoresist further comprises a thermal process with control of temperature, pressure, ambient gas chemistry, gas flow/ratio, and moisture.

12. The method of claim 1 , further comprising:

exposing the metal-containing photoresist to patterned EUV light, and

developing the metal-containing photoresist to remove portions of the metal-containing photoresist.

13. The method of claim 12 , wherein an intensity of the EUV light is between 20 and 100 mJ/cm 2 .

14. The method of claim 12 , wherein developing the metal-containing photoresist is a dry process.

15. The method of claim 12 , wherein developing the metal-containing photoresist is a wet process.

16. The method of claim 12 , wherein developing the metal-containing photoresist is a positive tone process.

17. The method of claim 12 , wherein developing the metal-containing photoresist is a negative tone process.

18. The method of claim 12 , further comprising, after developing the metal-containing photoresist, cleaning the metal-containing photoresist to remove scum.

19. The method of claim 12 , further comprising, after developing the metal-containing photoresist, exposing the metal-containing photoresist to additional blanket UV to improve the etch selectivity of the metal-containing photoresist.

20. The method of claim 19 , wherein exposing the metal-containing photoresist to additional blanket UV is performed in the presence of oxygen.

21. The method of claim 20 , wherein the partial pressure of oxygen is at least 10 Torr.

22. An apparatus for depositing a thin film, the apparatus comprising:

a metal-containing photoresist deposition module comprising a process chamber for depositing a EUV-sensitive metal-containing film;

a controller including one or more memory devices and one or more processors, the one or more memory devices comprising computer-executable instructions for controlling the one or more processors to:

receive in the process chamber a metal-containing photoresist on a substrate; and

treat the metal-containing photoresist by exposure to blanket UV to modify material properties of the metal-containing photoresist such that radiation sensitivity of the metal-containing photoresist is increased, wherein the treating the metal-containing photoresist precedes exposing the metal-containing photoresist to EUV lithography.

23. The apparatus of claim 22 , wherein the solubility of the metal-containing photoresist changes abruptly within an EUV dose range of no more than about 2 mJ/cm 2 .

24. The apparatus of claim 22 , further comprising:

exposing the metal-containing photoresist to patterned EUV light, and

developing the metal-containing photoresist to remove portions of the metal-containing photoresist.

25. The apparatus of claim 24 , further comprising, after developing the metal-containing photoresist, exposing the metal-containing photoresist to additional blanket UV to improve the etch selectivity of the metal-containing photoresist.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 30, 2023
From: WEIDMAN, TIMOTHY WILLIAM; GU, KEVIN LI; WU, CHENGHAO; NARDI, KATIE LYNN; VOLOSSKIY, BORIS
To: LAM RESEARCH CORPORATION
Reel/Frame 063179/0927 →
Continuity (2)
Provisional Application 63005075 · Apr 3, 2020
Related Publication 20230185196A1 · Jun 15, 2023
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