Granted Patent B2

US 12,477,754 · App. 17/636,113 · Granted Nov 18, 2025

Inventor: Richard Price (Sedgefield, GB)

Assignee: PRAGMATIC SEMICONDUCTOR LIMITED

H10D1/474H01C1/01H01C1/14H01C7/006H01C17/003H01C17/075H01C17/28H01L21/02565H10D1/47H10D8/60H10D30/6755H10D30/6757H10D62/80H10D84/02H10D84/204H10D84/811H10D86/0221H10D86/423H10D86/481H10D86/60H10D86/80H10D99/00

Abstract

Claims (37)

1 . A thin-film electronic component including a first terminal, a second terminal, and a first current path between the first terminal and the second terminal, wherein the first current path is formed from a first segment of a layer of a first material and a first segment of a layer of a second material arranged in series between the first terminal and the second terminal,

wherein thickness of the layer of the first material has a thickness and the layer of the second material has a thickness, and

wherein the thin-film electronic component is a thin film transistor, TFT, and the first terminal is a source terminal of the TFT and the second terminal is a drain terminal of the TFT, and the first segments of the layers of the first and second materials form the channel of the TFT, and wherein the first material is a resistive material and the second material is a semiconducting material.

2 . The thin-film electronic component of claim 1 , wherein the first segment of the layer of the second material includes a first part and a second part, the first part extending from one of the source terminal and the drain terminal to meet the first segment of the layer of the first material, and the second part extending from the source terminal to the drain terminal.

3 . The thin-film electronic component of claim 1 , wherein the resistivity of the first material is less than the resistivity of the second material when the TFT is in an on-state.

4 . The thin-film electronic component of claim 1 , wherein the first segment of the layer of the first material adjoins one of the source terminal and the drain terminal.

5 . The thin-film electronic component of claim 1 , wherein the first segment of the layer of the second material includes a third part, and the first segment of the layer of the first material is arranged in series between the first and third parts of the layer of the second material in the first current path.

6 . The thin-film electronic component of claim 1 , wherein the TFT includes a second current path between the source terminal and the drain terminal that is in parallel to the first current path, the second current path being formed from a second segment of the layer of the first material and a second segment of the layer of the second material arranged in series between the first terminal and the second terminal.

7 . The thin-film electronic component of claim 6 , wherein the first segments of the layers of the first and second materials of the first current path are arranged in an opposite order to the second segments of the layers of the first and second materials of the second current path.

8 . The thin-film electronic component of claim 1 , wherein the layer of the first material and the layer of the second material are formed from a same source material.

9 . A thin-film integrated circuit including the thin-film electronic component of claim 1 .

10 . The thin-film electronic component of claim 1 , wherein the thickness of the layer of the first material is different than the thickness of the layer of the second material.

11 . The thin-film electronic component of claim 1 , wherein the thickness of the layer of the first material is equal to the thickness of the layer of the second material.

12 . A method for fabricating a thin-film electronic component, the thin-film electronic component including a first terminal, a second terminal, and a first current path between the first terminal and the second terminal, wherein the first current path is formed from a first segment of a layer of a first material and a first segment of a layer of a second material arranged in series between the first terminal and the second terminal, and the method comprising:

depositing the layer of the first material;

patterning the layer of first material to form the first segment of the first material;

depositing the layer of the second material;

patterning the layer of the second material to form the first segment of the second material;

depositing a layer of conductive material; and

patterning the layer of conductive material to form the first and second terminals between which the first segments of the layers of the first and second materials form the first current path,

wherein the layer of the first material has a thickness and the layer of the second material has a thickness, and

wherein the thin-film electronic component is a thin-film transistor, TFT, and the first terminal is a source terminal of the TFT and the second terminal is a drain terminal of the TFT, and the first segments of the layers of the first and second materials form the channel of the TFT, and wherein the first material is a resistive material and the second material is a semiconducting material.

13 . The method of claim 12 , wherein the thickness of the layer of the first material is equal to the thickness of the layer of the second material.

14 . The method of claim 12 , wherein the thickness of the layer of the first material is different than the thickness of the layer of the second material.

15 . A method for fabricating a thin-film electronic component, the thin-film electronic component including a first terminal, a second terminal, and a first current path between the first terminal and the second terminal, wherein the first current path is formed from a first segment of a layer of a first material and a first segment of a layer of a second material arranged in series between the first terminal and the second terminal, and the method comprising:

depositing the layer of the first material;

patterning the layer of first material to form the first segment of the first material;

depositing the layer of the second material:

patterning the layer of the second material to form the first segment of the second material;

depositing a layer of conductive material; and

patterning the layer of conductive material to form the first and second terminals between which the first segments of the layers of the first and second materials form the first current path, wherein the layer of the first material has a thickness and the layer of the second material has a thickness,

wherein the thin-film electronic component is a resistor and the first material has a resistivity at least an order of magnitude higher than the resistivity of the second material,

wherein the thin-film electronic component includes a second current path between the first terminal and the second terminal that is in parallel to the first current path, the second current path being formed from a second segment of the layer of the first material and a second segment of the layer of the second material arranged in series between the first terminal and the second terminal, and wherein

the patterning of the layer of the first material forms the second segment of the layer of the first material; and

the patterning of the layer of the second material forms the second segment of the layer of the second material.

16 . The method of claim 15 , wherein the thickness of the layer of the first material is equal to the thickness of the layer of the second material.

17 . The method of claim 15 , wherein the thickness of the layer of the first material is different than the thickness of the layer of the second material.

Assignments (2)

Priority Claims (4)

Continuity (1)

References Cited (193)