IP Library › Granted Patent US 12,501,838
Granted Patent B2
US 12,501,838 · App. 17/667,948 · Granted Dec 16, 2025

Spin current magnetization rotational element, magnetoresistance effect element, and magnetic memory

Inventor: Tomoyuki Sasaki (Tokyo, JP)
Assignee: TDK CORPORATION
H10N52/00G01R33/098G11B5/39G11C11/161G11C11/1675G11C11/1697G11C11/18H01F10/32H01F10/3254H01F10/329H03B15/00H03B15/006H10B61/00H10D48/40H10D84/80H10N50/10H10N50/80H10N50/85H10N52/01H10N52/80H01F10/3286
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Quick Facts
Patent No.
US 12,501,838
App. No.
17/667,948
Granted
Dec 16, 2025
Kind
B2
Abstract

A spin current magnetization rotational element according to the present disclosure includes a first ferromagnetic metal layer configured for a direction of magnetization to be changed and a spin-orbit torque wiring extending in a direction intersecting a lamination direction of the first ferromagnetic metal layer and bonded to the first ferromagnetic metal layer. The spin-orbit torque wiring includes a narrow portion, and at least a part of the narrow portion constitutes a junction to the first ferromagnetic metal layer.

Claims (24)

1 . A spin current magnetization rotational element comprising:

a first ferromagnetic metal layer configured for a direction of magnetization to be changed; and

a spin-orbit torque wiring extending in a direction intersecting a lamination direction of the first ferromagnetic metal layer and bonded to the first ferromagnetic metal layer,

wherein the lamination direction of the first ferromagnetic metal layer is set as a direction z, a direction which is perpendicular to the direction z and is parallel to an extending direction of the spin-orbit torque wiring is set as a direction x, and a direction orthogonal to the direction x and the direction z is set as a direction y,

wherein in the spin-orbit torque wiring, there is a portion of the spin-orbit torque wiring not overlapping with the first ferromagnetic metal layer in the direction y, in a plan view viewed from the direction z, such that in the plan view, the spin-orbit torque wiring is disposed to not cover a part of the first ferromagnetic metal layer in the direction y,

wherein the first ferromagnetic metal layer is connected to a first power supply which controls a current I 1 which flows in the lamination direction of the first ferromagnetic metal layer, which is the direction y, and the current I 1 has a spin transfer torque effect, and

wherein the spin-orbit torque wiring is connected to a second power supply which controls a current I 2 which flows in the extending direction of the spin-orbit torque wiring, which is the direction x, and the current I 2 has a spin orbit torque effect.

2 . The spin current magnetization rotational element according to claim 1 ,

wherein the spin-orbit torque wiring includes: a spin current generating part made of a material generating a spin current; and a low resistance part made of a material having lower electrical resistance than electrical resistance of the spin current generating part.

3 . The spin current magnetization rotational element according to claim 1 ,

wherein the spin-orbit torque wiring includes a narrow portion,

wherein at least a part of the narrow portion constitutes a junction to the first ferromagnetic metal layer, and

wherein, in the spin-orbit torque wiring, the narrow portion has a thickness at least smaller than a thickness of a portion other than the narrow portion.

4 . The spin current magnetization rotational element according to claim 1 ,

wherein the spin-orbit torque wiring includes a narrow portion,

wherein at least a part of the narrow portion constitutes a junction to the first ferromagnetic metal layer, and

wherein, in the spin-orbit torque wiring, the narrow portion has a width at least smaller than a width of a portion other than the narrow portion in the plan view from the lamination direction.

5 . The spin current magnetization rotational element according to claim 2 , wherein the spin current generating part is made of a material selected from a group of tungsten, rhenium, osmium, iridium and an alloy including at least one of the metals.

6 . The spin current magnetization rotational element according to claim 1 , further comprising an insulating layer that is bonded to a face on a side opposite to a face of the spin-orbit torque wiring bonded to the first ferromagnetic metal layer.

7 . A magnetoresistance effect element comprising:

the spin current magnetization rotational element according to claim 1 ;

a second ferromagnetic metal layer in which a magnetization direction is fixed; and

a nonmagnetic layer interposed between the first ferromagnetic metal layer and the second ferromagnetic metal layer.

8 . A magnetic memory comprising a plurality of the magnetic resistance effect elements according to claim 7 .

Priority Claims (5)
JP 2015-232334 · Nov 27, 2015 · national
JP 2016-053072 · Mar 16, 2016 · national
JP 2016-056058 · Mar 18, 2016 · national
JP 2016-210531 · Oct 27, 2016 · national
JP 2016-210533 · Oct 27, 2016 · national
Continuity (2)
Continuation 15778159
Related Publication 20220223786A1 · Jul 14, 2022
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