Apparatuses and methods for row hammer counter mat
Apparatuses and methods for row hammer counter mat. A memory array may have a number of memory mats and a counter memory mat. The counter mat stores count values, each of which is associated with a row in one of the other memory mats. When a row is accessed, the count value is read out, changed, and written back to the counter mat. In some embodiments, the count value may be processed within access logic of the counter mat, and a row hammer flag may be provided to the bank logic. In some embodiments, the counter mat may have a folded architecture where each sense amplifier is coupled to multiple bit lines in the counter mat. The count value may be used to determine if the accessed row is an aggressor so that its victims can be refreshed as part of a targeted refresh.
1 . An apparatus comprising:
a first memory mat comprising a first plurality of word lines;
a second memory mat comprising a second plurality of memory cells configured to store a plurality of count values, each associated with one of the plurality of word lines;
a row decoder comprising a mapping engine configured to receive a row address associated with one of the plurality of word lines and generate a counter address associated with the associated one of the plurality of count values, wherein the counter address includes a counter row address and a counter column which are used to activate rows and columns of the second memory mat to access the associated one of the plurality of count values; and
a plurality of access logic circuits each associated with one of the plurality of count values, wherein when activated based on the counter address, an activated one of the plurality of access logic circuits is configured to update the associated one of the plurality of count values and provide a row hammer flag at an active level if the updated one of the plurality of count values meets or exceeds a threshold.
2 . The apparatus of claim 1 , wherein the counter column address corresponds to a set of bit lines each coupled to a memory cell storing a bit of the associated one of the plurality of count values.
3 . The apparatus of claim 2 , wherein each of the access logic circuits comprises:
a plurality of sense amplifiers, each coupled to one of the set of bit lines; and
a counter circuit configured to update the count and provide the row hammer flag.
4 . The apparatus of claim 1 , further comprising an aggressor register configured to store the row address responsive to the row hammer flag being at the active level.
5 . The apparatus of claim 4 , wherein the plurality of access logic circuits are in a sense amplifier region associated with the second memory mat, and the aggressor register is in a bank logic region associated with the first and the second memory mat.
6 . The apparatus of claim 1 , wherein each of the plurality of access logic circuits are configured to receive the associated one of the plurality of count values along a plurality of local input/output lines and provide the row hammer flag along a global input/output line.
7 . The apparatus of claim 1 , wherein the activated one of the plurality of access logic circuits is configured to reset the associated one of the plurality of count values responsive to the row hammer flag being at the active level.
8 . An apparatus comprising:
a first memory mat comprising a first word line and a second word line;
a second memory mat comprising a third word line, a first set of bit lines and a second set of bit lines, a first set of memory cells configured to store a first count value that represents a number of accesses to the first word line disposed at the intersection of the third word line and the first set of bit lines, and a second set of memory cells configured to store a second count value that represents a number of accesses to the second word line disposed at the intersection of the third word line and the second of bit lines; and
a mapping engine configured to receive a row address corresponding to the first word line or corresponding to second word line and generate a counter address which specifies the third word line and the first set of memory cells that store the first count value when the row address corresponds to the first word line and which specifies the third word line and the second set of memory cells that store the second count value when the row address corresponds to the second word line.
9 . The apparatus of claim 8 , wherein the counter address includes a word line address associated with the word line and column select address associated with the first set of bit lines of the second set of bit lines.
10 . The apparatus of claim 8 , further comprising:
a first access logic circuit configured to update the first count value responsive to the counter address specifying the third word line and the first set of memory cells; and
a second access logic circuit configured to update the second count value responsive to the counter address specifying the third word line and the second set of memory cells.
11 . The apparatus of claim 8 , further comprising a plurality of bit lines intersecting the first word line and the second word line, wherein selected ones of the plurality of bit lines are activated by a column decoder responsive to a column address different than the row address.