IP Library › Assignment 016976/0575
Patent Assignment
Reel/Frame 016976/0575

Release of Security Interest

Recorded: 2005-09-12 Pages: 6
Assignor
INFINEON TECHNOLOGIES AG
Executed: 2005-07-04
Assignee
RAMTRON INTERNATIONAL CORPORATION
1850 RAMTRON DRIVE, COLORADO SPRINGS, COLORADO, 80921
Covered Properties (73)
Method of Making Ferroelectric Memory Devices
Patent: 5,024,964 →
Application: 06/793,186 →
Self Restoring Ferroelectric Memory
Patent: 4,873,664 →
Application: 07/013,746 →
Data Storage Device and Method of Using a Ferroeloctric Capacitance Divider
Patent: 4,853,893 →
Application: 07/069,389 →
Method of Operating a Memory Cell with Volatile and Non-Volatile Portions Having Ferroelectric Capacitors
Patent: 4,809,225 →
Application: 07/069,390 →
Ferroelectric Retention Method
Patent: 4,893,272 →
Application: 07/184,996 →
Non-Volatile Memory Cell and Sensing Method
Patent: 4,888,733 →
Application: 07/243,414 →
One Transistor Memory Cell with Programmable Capacitance Divider
Patent: 4,914,627 →
Application: 07/292,776 →
Sram with Programmable Capacitance Divider
Patent: 4,918,654 →
Application: 07/292,818 →
Dram with Programmable Capacitance Divider
Patent: 4,910,708 →
Application: 07/292,891 →
Multilayer Electrodes for Integrated Circuit Capacitors
Patent: 5,005,102 →
Application: 07/368,668 →
Monolithic Semiconductor Integrated Circuit Ferroelectric Memory Device
Patent: 5,214,300 →
Application: 07/763,371 →
Structure of High Dielectric Constant Metal/ Dielectric/Semiconductor Capacitor for Use as the Storage Capacitor in Memory Devices
Patent: 5,338,951 →
Application: 07/788,547 →
Non-Volatile Ferroelectric Memory with Folded Bit Lines and Method of Making the Same
Patent: 5,371,699 →
Application: 07/977,825 →
Ozone Gas Processing for Ferroelectric Memory Circuits
Patent: 5,374,578 →
Application: 08/064,746 →
Ferroelectric-Based Ram Sensing Scheme Including Bit-Line Capacitance Isolation
Patent: 5,381,364 →
Application: 08/083,883 →
Ferroelectrid Memory Device with Capacitor Electrode in Direct Contact with Source Region
Patent: 5,866,926 →
Application: 08/093,790 →
Semiconductor Device Having a Ferroelectric Film in a Through-Hole
Patent: 5,369,296 →
Application: 08/139,340 →
Ferroelectric Capacitor Renewal Method
Patent: 5,525,528 →
Application: 08/200,216 →
Passivation Method and Structure for a Ferroelectric Integrated Circuit Using Hard Ceramic Materials or the Like
Patent: 5,438,023 →
Application: 08/212,495 →
Semiconductor Device Having a Transistor, a Ferroelectric Capacitor and a Hydrogen Barrier Film
Patent: 5,523,595 →
Application: 08/238,802 →
Stacked Ferroelectric Memory Cell and Method
Patent: 5,495,117 →
Application: 08/257,954 →
Semiconductor Device with a Conductive Reaction-Preventing Film
Patent: 5,475,248 →
Application: 08/303,134 →
Voltage Reference for a Ferroelectric 1T/1C Based Memory
Patent: 5,572,459 →
Application: 08/306,686 →
Passivation Method and Structure Using Hard Ceramic Materials or the Like
Patent: 5,578,867 →
Application: 08/394,467 →
Circuit and Method for Reducing a Compensation of a Ferroelectric Capacitor by Multiple Pulsing of the Plate Line Following a Write Operation
Patent: 5,592,410 →
Application: 08/420,293 →
Ferroelectric Memory Sensing Scheme Using Bit Lines Precharged to a Logic One Voltage
Patent: 5,530,668 →
Application: 08/420,752 →
Low Loss, Regulated Charge Pump with Integrated Ferroelectric Capacitors
Patent: 5,889,428 →
Application: 08/468,861 →
Ferroelectric Nonvolatile Random Access Memory Utilizing Self-Bootstrapping Plate Line Segment Drivers
Patent: 5,598,366 →
Application: 08/515,558 →
Integration of High Value Capacitor with Ferroelectric Memory
Patent: 5,608,246 →
Application: 08/525,497 →
Method for Making a Ferroelectrric Memory Cell with a Ferroelectric Capacitor Overlying a Memory Transistor
Patent: 5,580,814 →
Application: 08/527,175 →
Method of Making Integration of High Value Capacitor with Ferro- Electric Memory
Patent: 5,909,624 →
Application: 08/544,470 →
Use of Calcium and Strontium Dopants to Improve Retention Performance in a Pzt Ferroelectric Film
Patent: 5,969,935 →
Application: 08/616,856 →
Method of Measuring Retention Performance and Imprint Degradation of Ferroelectric Films
Patent: 6,008,659 →
Application: 08/616,913 →
Iridium Oxide Local Interconnect
Patent: 5,838,605 →
Application: 08/618,884 →
Bootstrapping Circuit Utilizing a Ferroelectric Capacitor
Patent: 5,774,392 →
Application: 08/620,799 →
Voltage Reference for a Ferroelectric 1T/Ic Based Memory
Patent: 5,822,237 →
Application: 08/634,445 →
Low Voltage Bootstrapping Circuit
Patent: 5,999,461 →
Application: 08/663,032 →
Circuit and Method for Reducing Compensation of a Ferroelectric Capacitor by Multiple Pulsing of the Plate Line Following a Write Operation
Patent: 5,815,430 →
Application: 08/691,132 →
Completely Encapsulated Top Electrode of a Ferroelectric Capacitor
Patent: 5,920,453 →
Application: 08/700,076 →
Bandgap Reference Based Power-on Detect Circuit Including a Supression Circuit
Patent: 5,852,376 →
Application: 08/702,363 →
Semiconductor Memory Device
Patent: 5,818,771 →
Application: 08/723,367 →
Partially or Completely Encapsulated Top Electrode of a Ferroelectric Capacitor
Patent: 5,864,932 →
Application: 08/728,740 →
Data Processor Incorporating a Ferroelectric Memory Array Selectably Configurable as Read/Write and Read Only Memory
Patent: 5,890,199 →
Application: 08/734,802 →
Partially or Completely Encapsulated Top Electrode of a Ferroelectric Capacitor
Patent: 6,027,947 →
Application: 08/828,157 →
Dual-Level Metalization Method for Integrated Circuit Ferroelectric Devices
Patent: 5,902,131 →
Application: 08/853,527 →
Use of Calcium and Strontium Dopants to Improve Retention Performance in a Pzt Ferroelectric Film
Patent: 5,800,683 →
Application: 08/861,674 →
Multi-Layer Approach for Optimizing Ferroelectric Film Performance
Patent: 6,080,499 →
Application: 08/896,684 →
Voltage Boost Circuit and Operation Thereof at Low Power Supply Voltages
Patent: 5,854,568 →
Application: 08/915,054 →
Plate Line Segmentation in a 1T/1C Ferroelectric Memory
Patent: 5,995,406 →
Application: 08/970,448 →
Reference Cell for a 1T/1C Ferroelectric Memory
Patent: 5,956,266 →
Application: 08/970,452 →
Sensing Methodology for a 1T/1C Ferroelectric Memory
Patent: 5,880,989 →
Application: 08/970,453 →
Column Decoder Configuration for a 1T/1C Ferroelectric Memory
Patent: 5,892,728 →
Application: 08/970,454 →
Reference Cell Configuration for a 1T/1C Ferroelectric Memory
Patent: 5,986,919 →
Application: 08/970,518 →
Sense Amplifier Configuration for a 1T/1C Ferroelectric Memory
Patent: 5,969,980 →
Application: 08/970,519 →
Memory Cell Configuration for a 1T/1C Ferroelectric Memory
Patent: 6,028,783 →
Application: 08/970,520 →
Plate Line Driver Circuit for a 1T/1C Ferroelectric Memory
Patent: 5,978,251 →
Application: 08/970,522 →
Integrated Circuit Memory Device Incorporating a Non-Volatile Memory Array and a Relatively Faster Access Time Memory Cache
Patent: 6,263,398 →
Application: 09/021,132 →
Ferroelectric Thin Films and Solutions: Compositions
Patent: 6,203,608 →
Application: 09/061,362 →
Multi-Layer Approach for Optimizing Ferroelectric Film Performance
Patent: 6,090,443 →
Application: 09/064,465 →
Completely Encapsulated Top Electrode of a Ferroelectric Capacitor Using a Lead-Enhanced Escapsulation Layer
Patent: 6,211,542 →
Application: 09/085,280 →
Hydrogen Barrier Encapsulation Techniques for the Control of Hydrogen Induced Degradation of Ferroelectric Capacitors in Conjunction with Multilevel Metal Processing for Non-Volatile Integrated Circuit Memory Devices
Patent: 6,249,014 →
Application: 09/164,952 →
Method of Manufacturing Ferroelectric Memory Device Useful for Preventing Hydrogen Line Degradation
Patent: 6,174,735 →
Application: 09/177,392 →
Method of Forming Oxide Local Interconnect
Patent: 5,985,713 →
Application: 09/183,545 →
Barrier Layer to Protect a Ferroelectric Capacitor After Contact Has Been Made to the Capacitor Electrode
Patent: 6,242,299 →
Application: 09/283,166 →
Ferroelectric Non-Volatile Latch Circuits
Patent: 6,141,237 →
Application: 09/351,563 →
Yield Enhancement Technique for Integrated Circuit Processing to Reduce Effects of Undesired Dielectric Moisture Retention and Subsequent Hydrogen Out-Diffusion
Patent: 6,190,926 →
Application: 09/356,534 →
Multi-Layer Approach for Optimizing Ferroelectric Film Performance
Patent: 6,287,637 →
Application: 09/427,644 →
Plate Line Driver Circuit for a 1T/1C Ferroelectric Memory
Patent: 6,185,123 →
Application: 09/465,724 →
Method of Fabricating Partially or Completely Encapsulated Top Electrode of a Ferroelectric Capacitor
Patent: 6,150,184 →
Application: 09/505,106 →
Ferroelectric memory device structure useful for preventing hydrogen line degradation
Patent: 6,201,726 →
Application: 09/588,153 →
Method of Manufacturing Ferroelectric Memory Device Structure Useful for Preventing Hydrogen Line Degradation
Patent: 6,358,755 →
Application: 09/641,091 →
Reference cell configuration for a 1T/1C ferroelectric memory
Patent: 6,252,793 →
Application: 09/663,121 →
Ferroelectric voltage boost circuits
Patent: 6,275,425 →
Application: 09/714,879 →
Related Assignments (22)
Other recorded transfers of the patents in this record — the chain of ownership.
Assignment of Assignors Interest. Oct 31, 1985
From: ROHRER, GEORGE A.; MC MILLAN, LARRY D.
To: RAMTRON CORPORATION, A CORP OF DE
Reel/Frame 004481/0611 →
Assignment of Assignors Interest. Aug 22, 1988
From: EATON, S. SHEFFIELD JR.; BUTLER, DOUGLAS; PARRIS, MICHAEL C.
To: RAMTRON CORPORATION, A CORP. OF DE
Reel/Frame 004931/0860 →
Assignment of Assignors Interest. Sep 12, 1988
From: MOBLEY, KENNETH J.
To: RAMTRON CORPORATION, A CORP. OF DE.
Reel/Frame 004935/0075 →
Assignment of Assignors Interest. Jun 20, 1989
From: LARSON, WILLIAM L.
To: RAMTRON CORPORATION
Reel/Frame 005095/0171 →
Assignment of Assignors Interest. Nov 6, 1991
From: ARGOS, GEORGE, JR.; KALKUR, THOTTAM S.
To: RAMTRON CORPORATION
Reel/Frame 005914/0818 →
Assignment of Assignors Interest. Nov 17, 1992
From: LARSON, WILLIAM L.
To: RAMTRON INTERNATIONAL CORPORATION
Reel/Frame 006370/0181 →
Merger May 10, 1993
From: RAMTRON CORPORATION
To: RAMTRON INTERNATIONAL CORPORATION
Reel/Frame 006581/0001 →
Assignment of Assignor's Interest Jun 24, 1993
From: CHERN, WEN-FOO; MEADOWS, BRETT
To: RAMTRON INTERNATIONAL CORPORATION
Reel/Frame 006612/0145 →
Security Interest Oct 12, 1993
From: RAMTRON INTERNATIONAL CORPORATION
To: NATIONAL ELECTRICAL BENEFIT FUND; BENTON, OREN L.
Reel/Frame 006721/0286 →
Assignment of Assignor's Interest Feb 23, 1994
From: PERINO, STANLEY; MITRA, SANJAY
To: RAMTRON INTERNATIONAL CORPORATION
Reel/Frame 006896/0319 →
Assignment of Assignor's Interest Mar 11, 1994
From: ARGOS, GEORGE JR.; SPANO, JOHN D.; TRAYNOR, STEVEN D.
To: RAMTRON INTERNATIONAL CORPORATION
Reel/Frame 006974/0625 →
Assignment of Assignor's Interest Sep 16, 1994
From: WILSON, DENNIS R.; MEADOWS, H. BRETT
To: RAMTRON INTERNATIONAL CORPORATION
Reel/Frame 007207/0222 →
Security Interest Mar 3, 1995
From: RAMTRON INTERNATIONAL CORPORATION
To: NATIONAL ELECTRICAL BENEFIT FUND
Reel/Frame 007374/0032 →
Assignment of Assignor's Interest Apr 11, 1995
From: VERHAEGHE, DONALD J.; TRAYNOR, STEVEN D.
To: RAMTRON INTERNATIONAL CORPORATION
Reel/Frame 007472/0149 →
Release/Termination of Security Interest Sep 29, 1995
From: NATIONAL ELECTRICAL BENEFIT FUND; BENTON, OREN L.
To: RAMTRON INTERNATIONAL CORPORATION
Reel/Frame 007648/0966 →
Security Agreement Sep 29, 1995
From: RAMTRON INTERNATIONAL CORPORATION
To: NATIONAL ELECTRICAL BENEFIT FUND
Reel/Frame 007662/0353 →
First Amendment to Patent Sec. Agmnt. Feb 23, 1999
From: NATONAL ELECTRICAL BENEFIT FUND
To: RAMTRON INTERNATIONAL CORPORATION
Reel/Frame 009756/0085 →
Security Interest Apr 12, 2002
From: RAMTRON INTERNATIONAL CORPORATION
To: INFINEON TECHNOLOGIES AG
Reel/Frame 012653/0747 →
Release of Security Agreement May 12, 2004
From: NATIONAL ELECTRICAL BENEFIT FUND
To: RAMTRON INTERNATIONAL CORPORATION
Reel/Frame 014624/0077 →
Security Agreement Oct 17, 2005
From: RAMTRON INTERNATIONAL CORPORATION
To: SILICON VALLEY BANK
Reel/Frame 017105/0174 →
Assignment of Assignor's Interest Dec 5, 2012
From: RAMTRON INTERNATIONAL CORPORATION
To: CYPRESS SEMICONDUCTOR CORPORATION
Reel/Frame 029408/0437 →
Release Mar 9, 2015
From: SILICON VALLEY BANK
To: RAMTRON INTERNATIONAL CORPORATION
Reel/Frame 035257/0406 →