IP Library Assignment 046407/0710
Patent Assignment
Reel/Frame 046407/0710

Nunc Pro Tunc Assignment

Recorded: 2018-06-21 Pages: 5
Assignor
UNITY SEMICONDUCTOR CORPORATION
Executed: 2018-06-18
Assignee
HEFEI RELIANCE MEMORY LIMITED
ROOM A-08, 14TH FLOOR, PLAZA A, BUILDING J1, INNOVATIVE INDUSTRIAL PARK PHASE II, HIGH-TECH ZONE, HEFEI, CHINA
Covered Properties (25)
Multi-Resistive State Element with Reactive Metal
Patent: 7,082,052 →
Application: 10/773,549 →
Publication: US 2005/0174835
Memory Element Having Islands
Patent: 6,972,985 →
Application: 10/868,578 →
Publication: US 2005/0243595
Memory Using Variable Tunnel Barrier Widths
Patent: 7,538,338 →
Application: 10/934,951 →
Publication: US 2006/0050598
Multi-Resistive State Element with Reactive Metal
Patent: 7,394,679 →
Application: 11/473,005 →
Publication: US 2006/0245243
Integrated circuits and methods to control access to multiple layers of memory
Patent: 9,058,300 →
Application: 12/069,105 →
Publication: US 2009/0204777
Method for Fabricating Multi-Resistive State Memory Devices
Patent: 8,062,942 →
Application: 12/215,958 →
Publication: US 2008/0293196
Multi-Resistive State Memory Device with Conductive Oxide Electrodes
Patent: 7,889,539 →
Application: 12/653,486 →
Publication: US 2010/0157657
Fuse Elements Based on Two-Terminal Re-Writeable Non-Volatile Memory
Patent: 8,339,867 →
Application: 12/653,850 →
Publication: US 2010/0195409
Continuous Plane of Thin-Film Materials for a Two-Terminal Cross-Point Memory
Patent: 8,237,142 →
Application: 12/932,642 →
Publication: US 2011/0155990
Threshold Device for a Memory Array
Patent: 8,395,928 →
Application: 13/206,460 →
Publication: US 2011/0291067
Memory Element with a Reactive Metal Layer
Patent: 8,675,389 →
Application: 13/272,985 →
Publication: US 2012/0033481
Non Volatile Memory Device Ion Barrier
Patent: 8,274,817 →
Application: 13/281,335 →
Publication: US 2012/0037879
Method For Fabricating Multi Resistive State Memory Devices
Patent: 8,611,130 →
Application: 13/301,490 →
Publication: US 2012/0064691
Planar Resistive Memory Integration
Patent: 8,610,099 →
Application: 13/586,580 →
Publication: US 2013/0207066
Planar Resistive Memory Integration
Patent: 9,029,827 →
Application: 14/062,609 →
Publication: US 2014/0231741
Memory Element with a Reactive Metal Layer
Patent: 9,159,408 →
Application: 14/167,694 →
Publication: US 2014/0211542
Multi-Layered Conductive Metal Oxide Structures and Methods for Facilitating Enhanced Performance Characteristics of Two-Terminal Memory Cells
Patent: 9,484,533 →
Application: 14/453,982 →
Publication: US 2014/0346435
Two-Terminal Reversibly Switchable Memory Device
Patent: 9,159,913 →
Application: 14/463,518 →
Publication: US 2015/0029780
Two-Terminal Reversibly Switchable Memory Device
Patent: 9,831,425 →
Application: 14/844,805 →
Publication: US 2015/0380642
Memory Element with a Reactive Metal Layer
Patent: 9,570,515 →
Application: 14/850,702 →
Publication: US 2016/0005793
Multi-Layered Conductive Metal Oxide Structures and Methods for Facilitating Enhanced Performance Characteristics of Two-Terminal Memory Cells
Patent: 9,818,799 →
Application: 15/338,857 →
Publication: US 2017/0110514
Memory Element with a Reactive Metal Layer
Patent: 9,806,130 →
Application: 15/393,545 →
Publication: US 2017/0179197
Two-Terminal Reversibly Switchable Memory Device
Application: 15/797,452 →
Publication: US 2018/0130946
Memory Element with a Reactive Metal Layer
Application: 15/797,716 →
Publication: US 2018/0122857
Multi-Layered Conductive Metal Oxide Structures and Methods for Facilitating Enhanced Performance Characteristics of Two-Terminal Memory Cells
Application: 15/811,179 →
Publication: US 2018/0130850
Related Assignments (15)
Other recorded transfers of the patents in this record — the chain of ownership.
Security Agreement Apr 13, 2009
From: UNITY SEMICONDUCTOR CORPORATION
To: GOLD HILL CAPITAL
Reel/Frame 023129/0669 →
Assignment of Assignor's Interest Jan 12, 2010
From: SIAU, CHANG HUA
To: UNITY SEMICONDUCTOR CORPORATION
Reel/Frame 023765/0072 →
Assignment of Assignor's Interest Jul 12, 2010
From: RINERSON, DARRELL; CHEVALLIER, CHRISTOPHE J.; HSIA, STEVE KUO-REN; KINNEY, WAYNE
To: UNITY SEMICONDUCTOR CORPORATION
Reel/Frame 024667/0964 →
Security Agreement Jan 25, 2011
From: UNITY SEMICONDUCTOR CORPORATION
To: SILICON VALLEY BANK
Reel/Frame 025710/0132 →
Assignment of Assignor's Interest Mar 18, 2011
From: CHEUNG, ROBIN; RINERSON, DARRELL; OH, TRAVIS BYONGHYOP; BORNSTEIN, JON
To: UNITY SEMICONDUCTOR CORPORATION
Reel/Frame 025980/0291 →
Assignment of Assignor's Interest Aug 23, 2011
From: BREWER, JULIE CASPERSON; RINERSON, DARRELL; CHEVALLIER, CHRISTOPHE J; KINNEY, WAYNE
To: UNITY SEMICONDUCTOR CORPORATION
Reel/Frame 026794/0748 →
Assignment of Assignor's Interest Nov 3, 2011
From: RINERSON, DARRELL; CHEVALLIER, CHRISTOPHE J.; HSIA, STEVE KUO-REN; KINNEY, WAYNE
To: UNITY SEMICONDUCTOR CORPORATION
Reel/Frame 027170/0171 →
Assignment of Assignor's Interest Nov 15, 2011
From: SCHLOSS, LAWRENCE; MEYER, RENE; KINNEY, WAYNE; LAMBERTSON, ROY
To: UNITY SEMICONDUCTOR CORPORATION
Reel/Frame 027229/0740 →
Assignment of Assignor's Interest Dec 12, 2011
From: RINERSON, DARRELL; CHEVALLIER, CHRISTOPHE J; HSIA, STEVE KUO-REN; KINNEY, WAYNE
To: UNITY SEMICONDUCTOR CORPORATION
Reel/Frame 027365/0662 →
Release of Security Interest Feb 9, 2012
From: SILICON VALLEY BANK
To: UNITY SEMICONDUCTOR CORPORATION
Reel/Frame 027675/0686 →
Release Apr 9, 2012
From: SILICON VALLEY BANK; GOLD HILL CAPITAL
To: UNITY SEMICONDUCTOR, INC.
Reel/Frame 028132/0675 →
Assignment of Assignor's Interest Sep 12, 2012
From: VEREEN, LIDIA; BATEMAN, BRUCE; PARILLO, LOUIS; FRIEND, ELIZABETH
To: UNITY SEMICONDUCTOR CORPORATION
Reel/Frame 028948/0393 →
Assignment of Assignor's Interest Aug 14, 2014
From: WU, JIAN; MEYER, RENE
To: UNITY SEMICONDUCTOR CORPORATION
Reel/Frame 033540/0891 →
Assignment of Assignor's Interest Sep 23, 2015
From: RINERSON, DARRELL; CHEVALLIER, CHRISTOPHE J.; HSIA, STEVE KUO-REN; KINNEY, WAYNE
To: UNITY SEMICONDUCTOR CORPORATION
Reel/Frame 036637/0929 →
Assignment of Assignor's Interest May 4, 2018
From: RAMBUS INC.
To: HEFEI RELIANCE MEMORY LIMITED
Reel/Frame 045984/0845 →