Patent Assignment
Reel/Frame 054387/0186
Release of Security Interest
Recorded: 2020-11-11
Pages: 74
Assignor
CPPIB CREDIT INVESTMENTS INC.
Executed: 2020-10-28
Assignee
CONVERSANT INTELLECTUAL PROPERTY MANAGEMENT INC.
515 LEGGET DRIVE, SUITE 704, OTTAWA, K2K 3G4, CANADA
Covered Properties
(51)
Shared Length Cell for Improved Capacitance
Patent:
6,025,624 →
Application:
09/099,765 →
System and Method for Selectively Increasing Surface Temperature of an Object
Isolation and/or Removal of Ionic Contaminants from Planarization Fluid Compositions Using Macrocyclic Polyethers and Methods of Using Such Compositions
Patent:
6,468,909 →
Application:
09/146,299 →
Method of Forming a Capacitor
Method for Improved Processing and Etchback of a Container Capacitor
Patent:
6,319,789 →
Application:
09/235,752 →
Methods of Forming Materials Comprising Tungsten and Nitrogen
Methods of Forming Semiconductor Circuit Constructions and Capacitor Constructions
Composition and Method of Formation and Use Therefor in Chemical-Mechanical Polishing
Patent:
6,409,936 →
Application:
09/252,022 →
Methods of Making Semiconductor Devices
Patent:
6,319,832 →
Application:
09/253,307 →
Stereolithographic Method for Applying Materials to Electronic Component Substrates and Resulting Structures
Patent:
6,524,346 →
Application:
09/259,143 →
Method of Depositing a Nitrogen Enriched Metal Layer, Method of Forming a Silicide Contact to a Silicon Comprising Substrate, Method of Forming a Metal Source Layer in an Integrated Circuit, Method of Analyzing Impact of Operating Parameter Changes for a Plasma Depositio
Patent:
6,365,507 →
Application:
09/260,237 →
Apparatus and Method for Feature Edge Detection in Semiconductor Processing
Patent:
6,624,897 →
Application:
09/292,396 →
Method of Forming High Aspect Ratio Structures for Seminconductor Devices
Patent:
6,204,143 →
Application:
09/293,635 →
Method of Forming a Pair of Capacitors Having a Common Capacitor Electrode, Method of Forming Dram Circuitry, Integrated Circuitry and Dram Circuitry
Patent:
6,277,687 →
Application:
09/323,440 →
Organic Field Ionization Source
Patent:
6,265,722 →
Application:
09/386,976 →
Method for Producing Water for Use in Manufacturing Semiconductors
Patent:
6,440,382 →
Application:
09/387,119 →
Methods of Forming Capacitors and Resultant Capacitor Structures
Patent:
6,403,442 →
Application:
09/389,533 →
Shared Length Cell for Improved Capacitance
Patent:
6,180,452 →
Application:
09/436,213 →
Method of Forming Low Dielectric Silicon Oxynitride Spacer Films Highly Selective to Etchants
Patent:
6,518,626 →
Application:
09/507,463 →
Semiconductor Circuit Constructions, Capacitor Constructions, and Methods of Forming Semiconductor Circuit Constructions and Capacitor Constructions
Patent:
6,555,863 →
Application:
09/566,673 →
Method of fabricating an SrRuO3 Film
Patent:
6,342,445 →
Application:
09/571,718 →
Reduction of Surface Roughness During Chemical Mechanical Planarization(Cmp)
Patent:
6,426,295 →
Application:
09/584,468 →
Isolation and/or Removal of Ionic Contaminants from Planarization Fluid Compositions Using Macrocyclic Polyethers
Patent:
6,458,290 →
Application:
09/642,682 →
Sensor Devices, Methods and Systems for Detecting Gas Phase Materials
Patent:
6,479,297 →
Application:
09/652,634 →
Methods for Forming Contact and Container Structures, and Integrated Circuit Devices Therefrom
Patent:
6,383,868 →
Application:
09/653,501 →
Integrated Circuitry and Dram Circuitry
Patent:
6,570,204 →
Application:
09/654,297 →
Capacitor and method of forming a capacitor
Patent:
6,313,496 →
Application:
09/654,930 →
Method of Selective Oxidation in Semiconductor Manufacture
Patent:
6,458,714 →
Application:
09/721,839 →
Shared Length Cell for Improved Capacitance
Methods of Forming Materials Comprising Tungsten and Nitrogen, and Methods of Forming Capacitors
Platinum-Rhodium Stack as an Oxygen Barrier
Methods of Forming Nitrogen-Containing Masses, Silicon Nitride Layers, and Capacitor Constructions
Integrated Circuit Capacitor Structures
Organic Field Ionization Source
Methods of Forming Semiconductor Circuit Constructions and Capacitor Constructions
Method for Improved Processing and Etchback of a Container Capacitor
Localized Array Threshold Voltage Implant to Enhance Charge Storage Within Dram Memory Cells
Methods of Forming Capacitors and Resultant Capacitor Structures
Solutions of Metal-Comprising Materials, Methods of Forming Metal-Comprising Layers, Methods of Storing Metal-Comprising Materials, and Methods of Forming Capacitors
Method of Fabricating an SRRUO3 Film
Dram Cell Constructions
Integrated Circuit Devices Having Contact and Container Structures
Composition and Method of Formation and Use Therefor in Chemical-Mechanical Polishing
Methods of Forming Dram Cells
Apparatus and Method for Feature Edge Detection in Semiconductor Processing
Reduction of Surface Roughness During Chemical Mechanical Planarization (Cmp)
Solutions of Metal-Comprising Materials
Semiconductor Circuit Constructions,Capacitor Constructions, and Methods of Forming Semiconductor Circuit Constructions and Capacitor Constructions
Semiconductor Processing Methods
Methods of Forming Semiconductor Constructions
Mixed Composition Interface Layer and Method of Forming
Patent:
43,025 →
Application:
12/566,533 →
Related Assignments
(7)
Other recorded transfers of the patents in this record — the chain of ownership.
U.S. Intellectual Property Security Agreement (for Non-U.S. Grantors) - Short Form
Jan 10, 2012
From: 658276 N.B. LTD.; 658868 N.B. INC.; MOSAID TECHNOLOGIES INCORPORATED
To: ROYAL BANK OF CANADA
Reel/Frame 027512/0196 →
Change of Name
Mar 13, 2014
From: MOSAID TECHNOLOGIES INCORPORATED
To: CONVERSANT INTELLECTUAL PROPERTY MANAGEMENT INC.
Reel/Frame 032439/0638 →
Release of Security Interest
Aug 7, 2014
From: ROYAL BANK OF CANADA
To: CONVERSANT INTELLECTUAL PROPERTY MANAGEMENT INC.; CONVERSANT IP N.B. 868 INC.; CONVERSANT IP N.B. 276 INC.
Reel/Frame 033484/0344 →
Change of Address
Sep 3, 2014
From: CONVERSANT INTELLECTUAL PROPERTY MANAGEMENT INC.
To: CONVERSANT INTELLECTUAL PROPERTY MANAGEMENT INC.
Reel/Frame 033678/0096 →
U.S. Patent Security Agreement (for Non-U.S. Grantors)
Sep 9, 2014
From: CONVERSANT INTELLECTUAL PROPERTY MANAGEMENT INC.
To: CPPIB CREDIT INVESTMENTS INC., AS LENDER; ROYAL BANK OF CANADA, AS LENDER
Reel/Frame 033706/0367 →
Amended and Restated U.S. Patent Security Agreement (for Non-U.S. Grantors)
Aug 22, 2018
From: CONVERSANT INTELLECTUAL PROPERTY MANAGEMENT INC.
To: CPPIB CREDIT INVESTMENTS, INC.
Reel/Frame 046900/0136 →
Release of U.S. Patent Agreement (for Non-U.S. Grantors)
Oct 12, 2018
From: ROYAL BANK OF CANADA, AS LENDER
To: CONVERSANT INTELLECTUAL PROPERTY MANAGEMENT INC.
Reel/Frame 047645/0424 →