Short inorganic trisilylamine-based polysilazanes for thin film deposition
Si-containing film forming compositions comprising Si—C free and volatile silazane-containing precursors are disclosed. The compositions may be used to deposit high purity thin films. The Si—C free and volatile silazane-containing precursors have the formulae: [(SiR 3 ) 2 NSiH 2 ] m —NH 2-m —C≡N, with m =1 or 2; (a) [(SiR 3 ) 2 NSiH 2 ] n —NL 3-n ,with n =2 or 3; (b) (SiH 3 ) 2 NSiH 2 —O—SiH 2 N(SiH 3 ) 2 ; and (c) (SiR′ 3 ) 2 N—SiH 2 —N(SiR′ 3 ) 2 ; (d) with each R independently selected from H, a dialkylamino group, or an amidinate; each R′ independently selected from H, a dialkylamino group, or an amidinate, with the provision that all R′ are not H; and L is selected from H or a C 1 -C 6 hydrocarbyl group.
1. A silicon-containing film forming composition comprising a precursor selected from the group consisting of:
[(SiR 3 ) 2 NSiH 2 ] m —NH 2-m —C≡N, with m= 1 or 2; (a)
[(SiR 3 ) 2 NSiH 2 ] n —NL 3-n ,with n= 2 or 3; (b)
(SiH 3 ) 2 NSiH 2 —O—SiH 2 N(SiH 3 ) 2 ; and (c)
(SiR′ 3 ) 2 N—SiH 2 —N(SiR′ 3 ) 2 ; (d)
wherein
each R is independently selected from H, a dialkylamino group having the formula NR 1 R 2 , or an amidinate,
Each R′ is independently selected from H, a dialkylamino group having the formula NR 1 R 2 , or an amidinate, with the provision that all R′ are not H,
R 1 and R 2 are independently selected from H or a C1-C12 hydrocarbyl group, with the provision that R 1 and R 2 cannot be simultaneously equal to H, and that if R 1 is H, then R 2 is a C 2 -C12 hydrocarbyl group, and NR′ R 2 may together form an N-containing heterocyclic ligand, and
L is selected from H or a C 1 -C 6 hydrocarbyl group.
2. The silicon-containing film forming composition of claim 1 , wherein the precursor is (SiH 3 ) 2 N—SiH 2 —N(SiH 3 )(SiH 2 NR 1 R 2 ), (SiH 3 ) 2 NSiH 2 —O—SiH 2 N(SiH 3 ) 2 , [(SiH 3 ) 2 NSiH 2 ]—NH—C≡N, or [(SiH 3 ) 2 NSiH 2 ] 2 N—C≡N.
3. The silicon-containing film forming composition of claim 1 , wherein the precursor is [(SiH 3 ) 2 NSiH 2 ] 2 NH or [(SiH 3 ) 2 NSiH 2 ] 3 N.
4. The silicon-containing film forming composition of claim 1 , wherein the precursor is (SiH 3 ) 2 N—SiH 2 —N(SiH 3 )(SiH 2 NMe 2 ), (SiH 3 ) 2 N—SiH 2 —N(SiH 3 )(SiH 2 NEt 2 ), (SiH 3 ) 2 N—SiH 2 —N(SiH 3 )(SiH 2 NEtMe), (SiH 3 ) 2 N—SiH 2 —N(SiH 3 )(SiH 2 NiPr 2 ), (SiH 3 ) 2 N—SiH 2 —N(SiH 3 )(SiH 2 NtBu 2 ), (SiH 3 ) 2 N—SiH 2 —N(SiH 3 )(SiH 2 NnBu 2 ), (SiH 3 ) 2 N—SiH 2 —N(SiH 3 )(SiH 2 NsecBu 2 ), or (SiH 3 ) 2 N—SiH 2 —N(SiH 3 )(SiH 2 NHtBu).
5. A method of deposit a silicon-containing film on a substrate by a chemical vapor deposition method, the method comprising
introducing into a reactor containing a substrate a vapor including the Si-containing film forming composition of claim 1 ;
depositing at least part of the precursor onto the substrate to form the silicon-containing film on the substrate using a chemical vapor deposition process.
6. The method of claim 5 , wherein the chemical vapor deposition method is an atomic layer deposition process or a plasma enhanced atomic layer deposition process.
7. The method of claim 5 , wherein the silicon-containing film is a silicon oxide film.
8. The method of claim 5 , wherein the silicon-containing film is a silicon nitride film.
9. The method of claim 5 , wherein the substrate is a silicon wafer.
10. The method of claim 5 , wherein the substrate is glass.
11. The method of claim 5 , wherein the substrate is an organic material.