Semiconductor device and method of manufacturing the same
Even when a stiffener is omitted, the semiconductor device which can prevent the generation of twist and distortion of a wiring substrate is obtained. As for a semiconductor device which has a wiring substrate, a semiconductor chip by which the flip chip bond was made to the wiring substrate, and a heat spreader adhered to the back surface of the semiconductor chip, and which omitted the stiffener for reinforcing a wiring substrate and maintaining the surface smoothness of a heat spreader, a wiring substrate has a plurality of insulating substrates in which a through hole whose diameter differs, respectively was formed, and each insulating substrate contains a glass cloth.
1. A semiconductor device comprising:
a wiring substrate including:
a first insulating layer having a first surface, a second surface opposite to the first surface, and a first through hole filled with a first through hole via,
a first wiring formed on the first surface of the first insulating layer,
a second wiring formed on the second surface of the first insulating layer, and electrically connected with the first wiring via the first through hole via,
a second insulating layer having a second through hole filled with a second through hole via, and formed on the first surface of the first insulating layer so as to cover the first wiring,
a third wiring formed on the second insulating layer, and electrically connected with the first wiring via the second through hole via,
a third insulating layer having a third through hole filled with a third through hole via, and formed on the second surface of the first insulating layer so as to cover the second wiring, and
a fourth wiring formed on the third insulating layer, and electrically connected with the second wiring via the third through hole via,
a semiconductor component mounted over the second insulating layer of on the wiring substrate; and
an external connection terminal formed over the third insulating layer of the wiring substrate,
wherein each of the first insulating layer, the second insulating layer, and the third insulating layer is a build-up substrate,
wherein a diameter of each of the first through hole, the second through hole, and the third through hole is equal to or less than 100 μm, and
wherein each of the first insulating layer, the second insulating layer and the third insulating layer contains a glass cloth.
2. The semiconductor device according to claim 1 , wherein a thickness of the first insulating layer is not greater than a thickness of each of the second insulating layer and the third insulating layer.
3. The semiconductor device according to claim 2 , wherein a diameter of each of the first through hole, the second through hole, and the third through hole is equal to or greater than 30 μm, and equal to or less than 100 μm.
4. The semiconductor device according to claim 3 ,
wherein the wiring substrate further includes:
a fourth insulating layer having a fourth through hole filled with a fourth through hole via, and formed on the second insulating layer so as to cover the third wiring, and
a fifth wiring formed on the fourth insulating layer, and electrically connected with the third wiring via the fourth through hole via, and
wherein a bump of the semiconductor component is electrically connected with the fifth wiring.
5. The semiconductor device according to claim 4 , wherein a thickness of the first insulating layer is not greater than a thickness of the fourth insulating layer.
6. The semiconductor device according to claim 5 ,
wherein the fourth insulating layer is the build-up substrate, and
wherein a diameter of the fourth through hole is equal to or greater than 30 μm, and equal to or less than 100 μm.
7. The semiconductor device according to claim 6 ,
wherein the semiconductor component is a semiconductor chip including a main surface, a bump formed on the main surface, and a back surface opposite to the main surface, and
wherein the semiconductor component is mounted on the wiring substrate via the bump such that the main surface of the semiconductor component faces the wiring substrate.
8. The semiconductor device according to claim 7 ,
wherein the wiring substrate further includes a first solder resist formed on the fourth insulating layer so as to expose a part of the fifth wiring, and
wherein the bump of the semiconductor component is electrically connected with the part of the fifth wiring.
9. The semiconductor device according to claim 8 ,
wherein the wiring substrate further includes:
a fifth insulating layer having a fifth through hole filled with a fifth through hole via, and formed on the third insulating layer so as to cover the fourth wiring, and
a sixth wiring formed on the fourth insulating layer, and electrically connected with the fourth wiring via the fifth through hole via, and
wherein the external connection terminal is formed on the sixth wiring.
10. The semiconductor device according to claim 9 , wherein a thickness of the first insulating layer is not thicker than a thickness of the fifth insulating layer.
11. The semiconductor device according to claim 10 ,
wherein each of the fourth insulating layer and the fifth insulating layer is the build-up substrate, and
wherein a diameter of each of the fourth through hole and the fifth through hole is equal to or larger than 30 μm, and equal to or less than 100 μm.
12. The semiconductor device according to claim 11 ,
wherein the wiring substrate further includes a second solder resist formed on the fifth insulating layer so as to expose a part of the sixth wiring, and
wherein the external connection terminal is formed on the part of the sixth wiring.
13. The semiconductor device according to claim 12 , wherein a heat spreader is adhered on the back surface of the semiconductor chip via a heat radiation resin.
14. The semiconductor device according to claim 12 , wherein an underfilling resin ( 28 ) is poured into a gap of the semiconductor chip and the wiring substrate.
15. The semiconductor device according to claim 12 , wherein the external connection terminal is a solder ball.
16. The semiconductor device according to claim 12 , wherein the glass cloth is a woven glass fiber in a shape of a cloth.
17. The semiconductor device according to claim 12 , wherein the glass cloth is a nonwoven fabric type glass cloth formed by a glass fiber.
18. The semiconductor device according to claim 1 , wherein a heat spreader is adhered on the back surface of the semiconductor component via a heat radiation resin.
19. The semiconductor device according to claim 1 , wherein an underfilling resin is poured into a gap of the semiconductor component and the wiring substrate.
20. The semiconductor device according to claim 1 , wherein the external connection terminal is a solder ball.
21. The semiconductor device according to claim 1 , wherein the glass cloth is a woven glass fiber in a shape of a cloth.
22. The semiconductor device according to claim 1 , wherein the glass cloth is a nonwoven fabric type glass cloth formed by a glass fiber.
23. A semiconductor device comprising:
a wiring substrate including:
a first insulating layer having a first surface, a second surface opposite to the first surface, and a first through hole filled with a first through hole via,
a first wiring formed on the first surface of the first insulating layer,
a second wiring formed on the second surface of the first insulating layer, and electrically connected with the first wiring via the first through hole via,
a second insulating layer having a second through hole filled with a second through hole via, and formed on the first surface of the first insulating layer so as to cover the first wiring,
a third wiring formed on the second insulating layer, and electrically connected with the first wiring via the second through hole via,
a third insulating layer having a third through hole filled with a third through hole via, and formed on the second surface of the first insulating layer so as to cover the second wiring,
a fourth wiring formed on the third insulating layer, and electrically connected with the second wiring via the third through hole via,
a fourth insulating layer having a fourth through hole filled with a fourth through hole via, and formed on the second insulating layer so as to cover the third wiring,
a fifth wiring formed on the fourth insulating layer, and electrically connected with the third wiring via the fourth through hole via,
a fifth insulating layer having a fifth through hole filled with a fifth through hole via, and formed on the third insulating layer so as to cover the fourth wiring,
a sixth wiring formed on the fourth insulating layer, and electrically connected with the fourth wiring via the fifth through hole via,
a first solder resist formed on the fourth insulating layer so as to expose a part of the fifth wiring, and
a second solder resist formed on the fifth insulating layer so as to expose a part of the sixth wiring,
a semiconductor chip including a main surface, a bump formed on the main surface, and a back surface opposite to the main surface, the semiconductor chip being mounted over the fourth insulating layer of the wiring substrate via the bump such that the main surface of the semiconductor chip faces the wiring substrate;
an underfilling resin poured into a gap of the semiconductor chip and the wiring substrate; and
a solder ball formed on the part of the sixth wiring,
wherein the bump of the semiconductor chip is electrically connected with the part of the fifth wiring,
wherein each of the first insulating layer, the second insulating layer, the third insulating layer, the fourth insulating layer, and the fifth insulating layer is a build-up substrate,
wherein a diameter of each of the first through hole, the second through hole, the third through hole, the fourth through hole, and the fifth through hole is equal to or less than 100 μm, and
wherein each of the first insulating layer, the second insulating layer, the third insulating layer, the fourth insulating layer, and the fifth insulating layer contains a glass cloth.
24. The semiconductor device according to claim 23 , wherein a thickness of the first insulating layer is a same as a thickness of each of the second insulating layer, the third insulating layer, the fourth insulating layer, and the fifth insulating layer.
25. The semiconductor device according to claim 24 , wherein a diameter of each of the first through hole, the second through hole, the third through hole, the fourth through hole, and the fifth through hole is equal to or larger than 30 μm, and equal to or less than 100 μm.
26. The semiconductor device according to claim 25 , wherein a heat spreader is adhered on the back surface of the semiconductor chip via a heat radiation resin.
27. The semiconductor device according to claim 25 , wherein the glass cloth is a woven glass fiber in a shape of a cloth.
28. The semiconductor device according to claim 25 , wherein the glass cloth is a nonwoven fabric type glass cloth formed by a glass fiber.