Memory component that performs data write from pre-programmed register
A memory access command, column address and plurality of write data values are received within an integrated-circuit memory chip via external signaling links. In response to the memory access command, the integrated-circuit memory chip (i) decodes the column address to select address-specified sense amplifiers from among a plurality of sense amplifiers that constitute a sense amplifier bank, (ii) reads first data, constituted by a plurality of read data values, out of the address-specified sense amplifiers, and (iii) overwrites the first data within the address-specified sense amplifiers with second data constituted by one or more of the write data values and by one or more of the read data values.
1. A memory integrated-circuit (IC) comprising:
a memory core;
a programmable register;
a signaling interface to receive a memory access command and address value; and
control circuitry responsive to the memory access command to retrieve data values from the programmable register and store the data values at locations, within the memory core, indicated by the address value.
2. The memory IC of claim 1 wherein the signaling interface is further to receive a register-write command prior to receiving the memory access command, and the control circuitry comprises register-write circuitry to store the data values within the programmable register in response to the register-write command.
3. The memory IC of claim 2 wherein the register-write command comprises (i) an operand-load instruction indicative of a register-write operation and (ii) an operand value constituted by the data values.
4. The memory IC of claim 3 wherein the signaling interface comprises a command/address interface to receive the operand-load instruction and the operand value via one or more command/address signaling links external to the memory IC, the signaling interface further comprising a data interface to be coupled to data signaling links external to the memory IC.
5. The memory IC of claim 2 wherein the register-write circuitry to store the data values within the programmable register in response to the register-write command comprises circuitry to store N data bits within the programmable register, where N is an integer greater than one and each of the N data bits constitutes a respective one of the data values.
6. The memory IC of claim 5 wherein the signaling interface comprises:
a command/address signaling interface to receive the register-write command from one or more command/address signaling links external to the memory IC; and
a N-bit wide data interface to be coupled to N data signaling links external to the memory IC.
7. The memory IC of claim 1 wherein the memory core comprises a memory cell array and a sense amplifier bank and wherein the control circuitry to store the data values within the memory core in response to the memory access command comprises circuitry to store the data values at locations within the sense amplifier bank indicated by the address value.
8. The memory IC of claim 7 wherein the control circuitry to store the data values within the memory core in response to the memory access command further comprises circuitry to transfer the data values, in response to the memory access command, from the locations within the sense amplifier bank to corresponding locations in a row of memory cells within the memory cell array.
9. The memory IC of claim 7 wherein:
the memory cell array comprises dynamic random access memory (DRAM) cells;
the signaling interface is further to receive a precharge command after receiving the memory access command and the address value; and
the control circuitry comprises circuitry, responsive to the precharge command, to transfer the data values from the locations within the sense amplifier bank to corresponding locations in a row of the DRAM cells.
10. The memory IC wherein the programmable register comprises two or more component registers each to store a respective subset of the data values.
11. A method of operation within a memory integrated-circuit (IC) having a programmable register and a memory core, the method comprising:
receiving a memory access command and address value; and
in response to the memory access command:
retrieving data values from the programmable register, and
storing the data values at locations, within the memory core, indicated by the address value.
12. The method of claim 11 further comprising receiving a register-write command prior to receiving the memory access command, and storing the data values within the programmable register in response to the register-write command.
13. The method of claim 12 wherein the register programming command comprises (i) an operand-load instruction indicative of a register-write operation and (ii) an operand value constituted by the data values.
14. The method of claim 13 wherein receiving the memory access command and address value comprises receiving the memory access command and address value via a command/address interface of the memory IC that is distinct from a read/write data interface of the memory IC, and wherein receiving the register-write command comprises receiving the operand-load instruction and the operand value via the command/address interface.
15. The method of claim 12 wherein storing the data values within the programmable register in response to the register-write command comprises storing N data bits within the programmable register, where N is an integer greater than one and each of the N data bits constitutes a respective one of the data values.
16. The method of claim 15 wherein the memory IC comprises an N-bit wide data interface and a command/address interface, and wherein receiving the register-write command comprises receiving the register-write command via the command/address interface.
17. The method of claim 11 wherein the memory core comprises a memory cell array and a sense amplifier bank and wherein storing the data values within the memory core in response to the memory access command comprises storing the data values at locations within the sense amplifier bank indicated by the address value.
18. The method of claim 17 wherein storing the data values within the memory core in response to the memory access command further comprises transferring the data values, in response to the memory access command, from the locations within the sense amplifier bank to corresponding locations in a row of memory cells within the memory cell array.
19. The method of claim 17 further comprising:
receiving a precharge command after receiving the memory access command and the address value; and
in response to the precharge command, transferring the data values from the locations within the sense amplifier bank to corresponding locations in a row of dynamic random access memory cells within the memory cell array.
20. A memory subsystem comprising:
a shared chip-select signal line;
a plurality of data signal lines;
a plurality of shared command/address signal lines; and
a plurality of memory chips each having:
a memory core;
a programmable register;
a chip-select input coupled to the shared chip-select signal line to receive a chip-select signal;
a data signaling interface coupled to a respective subset of the data signal lines;
a command/address signaling interface coupled to the shared command/address signal lines to receive a memory access command and address value; and
control circuitry responsive to the chip-select signal and the memory access command to retrieve data values from the programmable register and store the data values at locations, within the memory core, indicated by the address value.