Multi-chip module (MCM) with multi-port unified memory
Semiconductor devices, packaging architectures and associated methods are disclosed. In one embodiment, a multi-chip module (MCM) is disclosed. The MCM includes a common substrate and a first integrated circuit (IC) chip disposed on the common substrate. The first IC chip includes a first memory interface. A second IC chip is disposed on the common substrate and includes a second memory interface. A first memory device is disposed on the common substrate and includes memory and a first port coupled to the memory. The first port is configured for communicating with the first memory interface of the first IC chip. A second port is coupled to the memory and communicates with the second memory interface of the second IC chip. In-memory processing circuitry is coupled to the memory and controls transactions between the first memory device and the first and second IC chips.
1. A chiplet-based multi-chip module (MCM) to couple to a base substrate, the chip let-based MCM comprising:
a non-silicon package substrate that is separate from the base substrate;
a first integrated circuit (IC) chiplet coupled to the non-silicon package substrate and comprising a first memory interface and a first network-on-chip (NoC) circuit;
a first memory chiplet coupled to the non-silicon package substrate and comprising
a first memory comprising a first memory space;
a first port to communicate with the first memory interface of the first IC chiplet;
a second port;
a second NoC circuit in communication with the first NoC circuit via the first port, and coupled to the second port;
a second memory chiplet arranged in a daisy-chained configuration with the first memory chiplet, the second memory chiplet comprising
a second memory comprising a second memory space;
a third port to communicate with the second port of the first memory chiplet;
a third NoC circuit in communication with the first NoC circuit and the second NoC circuit; and
wherein the first IC chiplet accesses the second memory space of the second memory chiplet via the first memory chiplet.
2. The chiplet-based MCM of claim 1 , wherein:
the first memory chiplet and the second memory chiplet comprise respective high bandwidth memory (HBM) chiplets.
3. The chiplet-based MCM of claim 1 , wherein:
the first memory comprises a first set of at least one memory IC die;
the first port, the second port, and the second NoC circuit are formed on a first logic IC die that is coupled to the first set of at least one memory IC die;
the second memory comprises a second set of at least one memory IC die; and
the third port and the third NoC circuit are formed on a second logic IC die that is coupled to the second set of at least one memory IC die.
4. The chiplet-based MCM of claim 3 , wherein:
the first set of at least one memory IC die is disposed in a horizontal relationship with the first logic IC die; and
the second set of at least one memory IC die is disposed in a horizontal relationship with the second logic IC die.
5. The chiplet-based MCM of claim 3 , wherein:
the first set of at least one memory IC die is disposed in a vertical relationship with the first logic IC die; and
the second set of at least one memory IC die is disposed in a vertical relationship with the second logic IC die.
6. The chiplet-based MCM of claim 1 , wherein the second NoC circuit includes:
input buffer circuitry to receive information from the first NoC circuit; and
a crossbar switch to feed the information from the input buffer circuitry to the second port.
7. The chiplet-based MCM of claim 1 , wherein the first IC chiplet comprises:
a first processing unit.
8. The chiplet-based MCM of claim 1 , wherein:
the second memory chiplet comprises a fourth port; and
wherein the chiplet-based MCM further comprises a third memory chiplet coupled to the fourth port of the second memory chiplet; and
wherein accesses to the third memory chiplet are carried out via the third port and fourth port of the second memory chiplet.
9. The chiplet-based MCM of claim 1 , realized as a system-in-package (SiP).
10. The chiplet-based MCM of claim 9 , wherein:
the non-silicon package substrate comprises an organic standard package substrate.
11. The chiplet-based MCM of claim 10 , wherein:
the first memory chiplet comprises a first high-bandwidth memory (HBM) chiplet; and
the second memory chiplet comprises a second high-bandwidth memory (HBM) chiplet.
12. A chiplet-based multi-chip module (MCM) to couple to a base substrate, the chiplet-based MCM comprising:
a non-silicon package substrate that is separate from the base substrate;
a first integrated circuit (IC) chiplet coupled to the non-silicon package substrate and comprising a first memory interface;
a first memory chiplet coupled to the non-silicon package substrate and comprising
a first memory comprising a first memory space;
a first port to communicate with the first memory interface of the first IC chiplet;
a second port; and
a second memory chiplet coupled to the non-silicon package substrate and arranged inline with the first memory chiplet, the second memory chiplet comprising
a second memory comprising a second memory space;
a third port to communicate with the second port of the first memory chiplet; and
wherein the first IC chiplet to indirectly accesses the second memory space of the second memory chiplet via the first memory chiplet.
13. The chiplet-based MCM of claim 12 , wherein the first IC chiplet comprises:
a first processing unit.
14. The chiplet-based MCM of claim 12 , wherein:
the first memory comprises a first set of at least one memory IC die;
the first port and the second port are formed on a first logic IC die that is coupled to the first set of at least one memory IC die;
the second memory comprises a second set of at least one memory IC die; and
wherein the third port is formed on a second logic IC die that is coupled to the second set of at least one memory IC die.
15. The chiplet-based MCM of claim 14 , wherein:
the first set of at least one memory IC die is disposed in a horizontal relationship with the first logic IC die; and
the second set of at least one memory IC die is disposed in a horizontal relationship with the second logic IC die.
16. The chiplet-based MCM of claim 15 , wherein:
the first set of at least one memory IC die is disposed in a vertical relationship with the first logic IC die; and
the second set of at least one memory IC die is disposed in a vertical relationship with the second logic IC die.
17. The chiplet-based MCM of claim 12 , wherein the first memory chiplet further comprises:
a fourth port coupled to the first memory space to communicate with a third IC chiplet.
18. The chiplet-based MCM of claim 17 , wherein the third IC chiplet comprises:
a third memory chiplet.
19. The chiplet-based MCM of claim 12 , realized as a system-in-package (SiP).
20. The chiplet-based MCM of claim 19 , wherein:
the non-silicon package substrate comprises an organic standard package substrate.
21. The chiplet-based MCM of claim 20 , wherein:
the first memory chiplet comprises a first high-bandwidth memory (HBM) chiplet; and
the second memory chiplet comprises a second high-bandwidth memory (HBM) chiplet.