Granted Patent B2

US 12,469,699 · App. 18/486,471 · Granted Nov 11, 2025

Inventors: Rachael L. Myers-Ward (Arlington, VA); Jeehwan Kim (Cambridge, MA); Kuan Qiao (Cambridge, MA); Wei Kong (Cambridge, MA); David Kurt Gaskill (Alexandria, VA); Takuji Maekawa (Kyoto, JP); Noriyuki Masago (Kyoto, JP)

Assignees: Massachusetts Institute of Technology; The Government of the United States of America, as Represented by the Secretary of the Navy; ROHM Co., Ltd.

H01L21/02529H01L21/02378H01L21/02389H01L21/02433H01L21/02444H01L21/02458H01L21/02502H01L21/02598H01L21/0262

Abstract

Claims (19)

1 . A method, comprising:

forming a silicon carbide (SiC) film over a layer comprising graphene and/or hexagonal boron nitride (hBN) that is over a substrate, wherein the SiC film is single crystalline;

wherein at least a portion of the formation of the SiC film occurs in the presence of a gaseous material comprising an inert gas, and

wherein, during the forming of the SiC film, the temperature of an environment of the layer comprising the graphene and/or hBN over the substrate is ramped from a first temperature to a second, higher temperature, wherein the first temperature and the second temperature are greater than or equal to 1350° C. and less than or equal to 1800° C.

2 . The method of claim 1 , wherein the inert gas comprises Argon, Helium, and/or nitrogen (N 2 ).

3 . The method of claim 1 , wherein the inert gas comprises Argon.

4 . The method of claim 1 , further comprising separating the SiC film and the substrate.

5 . The method of claim 4 , wherein the SiC film is a first SiC film, and further comprising forming a second SiC film over the substrate after the first SiC film and the substrate have been separated.

6 . The method of claim 1 , wherein forming the SiC film over the layer comprises using the substrate as a seed for the SiC film.

7 . The method of claim 1 , wherein a surface of the substrate over which the layer is positioned during growth is a SiC surface.

8 . The method of claim 1 , wherein the substrate is a semiconductor substrate.

9 . The method of claim 1 , wherein the substrate is made, in whole or in part, of SiC having an offcut angle of between or equal to 0° and 10°.

10 . The method of claim 1 , wherein the substrate is made, in whole or in part, of (0001) 4H—SiC and/or (0001) 6H—SiC.

11 . The method of claim 1 , wherein the environment of the layer comprising the graphene and/or hBN over the substrate further comprises the gaseous material comprising the inert gas, wherein a flow rate of the gaseous material is between or equal to 10 standard liters per minute (slm) and 80 slm.

12 . The method of claim 1 , wherein the substrate is made, in whole or in part, of a III-Nitride.

13 . The method of claim 1 , wherein the second temperature is greater than or equal to 1620° C. and less than or equal to 1800° C.

14 . The method of claim 1 , further comprising forming the layer over the substrate.

15 . The method of claim 14 , wherein forming the layer over the substrate comprises growing the layer over the substrate.

16 . The method of claim 1 , wherein the layer is single crystalline.

Assignments (3)

Continuity (3)

References Cited (186)