IP Library › Granted Patent US 12,278,216
Granted Patent B2
US 12,278,216 · App. 18/668,221 · Granted Apr 15, 2025

3D semiconductor device and structure with metal layers

Inventors: Zvi Or-Bach (Haifa, IL); Brian Cronquist (Klamath Falls, OR)
Assignee: Monolithic 3D Inc.
H01L25/0657H01L21/743H01L21/76898H01L23/481H01L23/485H01L23/522H01L24/25H01L25/50H01L27/0688H01L27/088H01L29/66621H01L27/092H01L29/4236H01L29/78H01L2224/24146H01L2225/06544H01L2225/06589H01L2924/0002H01L2924/01104H01L2924/12032H01L2924/12042H01L2924/13091H01L2924/2064H01L2924/351
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Quick Facts
Patent No.
US 12,278,216
App. No.
18/668,221
Granted
Apr 15, 2025
Kind
B2
Abstract

A 3D semiconductor device including: a first level with first transistors, single crystal layer overlaid by at least one first metal layer which includes interconnects between the first transistors forming first control circuits with a sense amplifier; the first metal-layer(s) overlaid by a second metal-layer which is overlaid by a second level which includes first memory cells which include second transistors with a metal gate, overlaid by a third level which includes second memory cells which include third transistors and are partially disposed atop the control circuits, which control data written to second memory cells; a fourth metal-layer overlaying a third metal-layer which overlays the third level; where third transistor gate locations are aligned to second transistor gate locations within less than 100 nm, the average thickness of fourth metal-layer is at least twice the average thickness of second metal-layer; the fourth metal-layer includes a global power distribution grid.

Claims (110)

1. A 3D semiconductor device, the device comprising:

a first level comprising a first single crystal layer, said first level comprising a plurality of first transistors and at least one first metal layer,

wherein said at least one first metal layer overlays said first single crystal layer, and

wherein said at least one first metal layer comprises interconnects between said first transistors thus comprising formation of first control circuits;

a second metal layer overlaying said at least one first metal layer;

a second level overlaying said second metal layer, said second level comprising a plurality of second transistors;

a third level overlaying said second level, said third level comprising a plurality of third transistors,

wherein said first control circuits comprise at least one sense amplifier,

wherein said second level comprises a plurality of first memory cells, said first memory cells each comprising at least one of said second transistors,

wherein said third level comprises a plurality of second memory cells, said second memory cells each comprising at least one of said third transistors,

wherein at least one of said second memory cells is at least partially disposed atop of said control circuits, and

wherein said first control circuits are connected to control data written to at least one of said second memory cells;

a third metal layer disposed above said third level; and

a fourth metal layer disposed above said third metal layer;

wherein said second transistors comprise second transistor gate locations,

wherein said third transistors comprise third transistors gate locations,

wherein said third transistor gate locations are aligned to said second transistor gate locations within less than 100 nm but more than 0.2 nm alignment error, being formed following two independently aligned lithography steps,

wherein at least one of said second transistors comprises a metal gate,

wherein said fourth metal layer has an average thickness which is at least twice an average thickness of said second metal layer,

wherein said fourth metal layer comprises a global power distribution grid,

wherein said second transistors comprise second gate lines,

wherein said third transistors comprise third gate lines, and

wherein said second gate lines and said third gate lines were deposited in the same process step.

2. The 3D semiconductor device according to claim 1 , further comprising:

a conductive path from said fourth metal layer to said second metal layer,

wherein said conductive path comprises a via disposed through said third level, and

wherein said via has a diameter of less than 1 micron.

3. The 3D semiconductor device according to claim 1 ,

wherein said second transistors are aligned to said first transistors with a less than 450 nm misalignment.

4. The 3D semiconductor device according to claim 1 ,

wherein said first metal layer thickness is at least by 50% thicker than said second metal layer thickness.

5. The 3D semiconductor device according to claim 1 , further comprising:

a fourth level disposed atop of said fourth metal layer,

wherein said fourth level comprises single crystal silicon,

wherein said fourth level comprises a plurality of fourth transistors.

6. The 3D semiconductor device according to claim 1 ,

wherein said device comprises at least one layer deposited using Atomic Layer Deposition (“ALD”).

7. The 3D semiconductor device according to claim 1 ,

wherein at least one of said second transistors comprises a portion being processed by a first lithography step, and

wherein at least one of said third transistors comprises a portion being processed by a second lithography step.

8. A 3D semiconductor device, the device comprising:

a first level comprising a first single crystal layer, said first level comprising a plurality of first transistors, at least one first metal layer, and first control circuits,

wherein said at least one first metal layer overlays said first single crystal layer;

a second metal layer overlaying said at least one first metal layer;

a second level overlaying said second metal layer, said second level comprising a plurality of second transistors;

a third level overlaying said second level, said third level comprising a plurality of third transistors,

wherein said second level comprises a plurality of first memory cells, said first memory cells each comprising at least one of said second transistors,

wherein said third level comprises a plurality of second memory cells, said second memory cells each comprising at least one of said third transistors,

wherein at least one of said second memory cells is at least partially disposed atop of said first control circuits,

wherein said first control circuits are connected to control data written to at least one of said second memory cells, and

wherein said first metal layer thickness is at least by 50% thicker than said second metal layer thickness;

a third metal layer disposed above said third level; and

a fourth metal layer disposed above said third metal layer,

wherein said second transistors comprise second transistor gate locations,

wherein said third transistors comprise third transistor gate locations,

wherein said third transistor gate locations are aligned to said second transistor gate locations within less than 100 nm but more than 0.2 nm alignment error, being formed following two independently aligned lithography steps, and

wherein said fourth metal layer has an average thickness which is at least twice an average thickness of said second metal layer.

9. The 3D semiconductor device according to claim 8 , further comprising:

a conductive path from said fourth metal layer to said second metal layer,

wherein said conductive path comprises a via disposed through said third level, and

wherein said via has a diameter of less than 1 micron.

10. The 3D semiconductor device according to claim 8 ,

wherein said fourth metal layer comprises a global power distribution grid.

11. The 3D semiconductor device according to claim 8 ,

wherein said device comprises at least one layer deposited using Atomic Layer Deposition (“ALD”).

12. The 3D semiconductor device according to claim 8 ,

wherein said first control circuits comprise at least one sense amplifier.

13. The 3D semiconductor device according to claim 8 ,

wherein said second transistors comprise second gate lines,

wherein said third transistors comprise third gate lines, and

wherein said second gate lines and said third gate lines were deposited in the same process step.

14. The 3D semiconductor device according to claim 8 ,

wherein at least one of said second transistors comprises a portion being processed by a first lithography step, and

wherein at least one of said third transistors comprises a portion being processed by a second lithography step.

15. A 3D semiconductor device, the device comprising:

a first level comprising a first single crystal layer, said first level comprising a plurality of first transistors and at least one first metal layer,

wherein said at least one first metal layer overlays said first single crystal layer, and

wherein said at least one first metal layer comprises interconnects between said first transistors thus comprising formation of first control circuits;

a second metal layer overlaying said at least one first metal layer;

a second level overlaying said second metal layer, said second level comprising a plurality of second transistors;

a third level overlaying said second level, said third level comprising a plurality of third transistors,

wherein said second level comprises a plurality of first memory cells, said first memory cells each comprising at least one of said second transistors,

wherein said third level comprises a plurality of second memory cells, said second memory cells each comprising at least one of said third transistors,

wherein at least one of said second memory cells is at least partially disposed atop of said first control circuits, and

wherein said first control circuits are connected to control data written to at least one of said second memory cells;

a third metal layer disposed above said third level;

a fourth metal layer disposed above said third metal layer;

wherein said second transistors comprise second transistor channels,

wherein said third transistors comprise third transistor channels,

wherein at least one of said second transistor channels is aligned to at least one of said third transistor channels with a greater than 1 nm but less than 40 nm alignment error,

wherein said second transistor channel lithography step was different than said third transistor channel lithography step, and

wherein said fourth metal layer has an average thickness which is at least twice an average thickness of said second metal layer;

a conductive path from said fourth metal layer to said second metal layer; and

a fourth level disposed above said fourth metal layer,

wherein said fourth level comprises a single crystal layer,

wherein said conductive path comprises a via disposed through said third level, and

wherein said via has a diameter of less than 800 nm.

16. The 3D semiconductor device according to claim 15 ,

wherein said fourth metal layer comprises a global power distribution grid.

17. The 3D semiconductor device according to claim 15 ,

wherein said device comprises at least one layer deposited using Atomic Layer Deposition (“ALD”).

18. The 3D semiconductor device according to claim 15 ,

wherein at least one of said second transistors comprises a metal gate.

19. The 3D semiconductor device according to claim 15 , further comprising:

a top level disposed atop said fourth metal layer,

wherein said top level comprises a second single crystal layer.

20. The 3D semiconductor device according to claim 15 ,

wherein said second transistors comprise second gate lines,

wherein said third transistors comprise third gate lines, and

wherein said second gate lines and said third gate lines were deposited in the same process step.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 19, 2024
From: OR-BACH, ZVI, MR.; CRONQUIST, BRIAN, MR.
To: MONOLITHIC 3D INC.
Reel/Frame 067458/0563 →
Continuity (23)
Continuation 18604695 · Mar 14, 2024
Continuation In Part 18395546 · Dec 23, 2023
Continuation In Part 18236325 · Aug 21, 2023
Continuation In Part 18214524 · Jun 27, 2023
Continuation In Part 18141415 · Apr 29, 2023
Continuation In Part 18105826 · Feb 4, 2023
Continuation In Part 17986831 · Nov 14, 2022
Continuation In Part 17882607 · Aug 8, 2022
Continuation In Part 17750338 · May 21, 2022
Continuation In Part 17680297 · Feb 25, 2022
Continuation In Part 17536019 · Nov 27, 2021
Continuation In Part 17334928 · May 31, 2021
Continuation In Part 17195517 · Mar 8, 2021
Continuation In Part 17020766 · Sep 14, 2020
Continuation In Part 16683244 · Nov 13, 2019
Continuation In Part 16409840 · May 12, 2019
Continuation In Part 15990684 · May 28, 2018
Continuation In Part 15721955 · Oct 1, 2017
Continuation In Part 15008444 · Jan 28, 2016
Continuation In Part 14541452 · Nov 14, 2014
Continuation 14198041 · Mar 5, 2014
Continuation 13726091 · Dec 22, 2012
Related Publication 20240321832A1 · Sep 26, 2024
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