Methods to process 3D semiconductor devices and structures which have metal layers
A method to process a semiconductor device: processing the substrate forming a first level with a first single-crystal silicon-layer, first transistors, input-and-output (“IO”) circuits; forming a first metal-layer; forming a second metal-layer including a power-delivery network, where interconnection of the first transistors includes the first metal-layer and the second metal-layer; processing a second level including second transistors with metal gates and a first array of memory-cells; processing a third level including a plurality of third transistors with metal gates and a second array of memory-cells; third level disposed over the second level; forming a fourth metal-layer over a third metal-layer over the third-level; processing a fourth level including a second single-crystal silicon-layer, fourth level is disposed over the fourth metal-layer; forming a via disposed through the second and third levels, connections of the device to external devices includes the “IO”-circuits; the second level is disposed over the first level.
1 . A method to process a semiconductor device, the method comprising:
providing a substrate;
processing said substrate to form a first level comprising a first single crystal silicon layer and a plurality of first transistors;
forming a first metal layer;
forming a second metal layer,
wherein interconnection of said plurality of first transistors comprises said first metal layer and said second metal layer;
processing a second level comprising a plurality of second transistors;
processing a third level comprising a plurality of third transistors,
wherein said third level is disposed over said second level;
forming a third metal layer disposed over said third level;
forming a fourth metal layer disposed over said third metal layer;
processing a fourth level comprising a second single crystal silicon layer,
wherein said fourth level is disposed over said fourth metal layer,
wherein each of said plurality of second transistors comprises a metal gate, and
wherein said second metal layer comprises a power delivery network; and
forming a via disposed through said second level and through said third level,
wherein each of said plurality of third transistors comprises a metal gate,
wherein said second level comprises a first array of memory cells,
wherein said third level comprises a second array of memory cells,
wherein said first level comprises input and output (“IO”) circuits,
wherein connections of said device to external devices comprises said input and output (“IO”) circuits, and
wherein said second level is disposed over said first level; processing a connection path from said third metal layer to said second metal layer, wherein said connection path comprises said via; processing a power delivery to at least one of said plurality of second transistors, wherein said power delivery path comprises at least a part of said second metal layer.
2 . The method according to claim 1 ,
wherein at least one of said metal gates comprises tungsten.
3 . The method according to claim 1 , further comprising:
processing memory control circuits,
wherein said memory control circuits comprise a portion of said plurality of first transistors.
4 . The method according to claim 1 , further comprising:
processing power control circuits,
wherein said power control circuits comprise a portion of said plurality of first transistors.
5 . The method according to claim 1 , further comprising:
processing another power delivery path to at least one of said plurality of second transistors,
wherein said another power delivery path comprises said via.
6 . A method to process a semiconductor device, the method comprising:
providing a substrate;
processing said substrate to form a first level comprising a first single crystal silicon layer and a plurality of first transistors;
forming a first metal layer;
forming a second metal layer,
wherein interconnection of said plurality of first transistors comprises said first metal layer and said second metal layer;
processing a second level comprising a plurality of second transistors;
processing a third level comprising a plurality of third transistors,
wherein said third level is disposed over said second level;
forming a third metal layer disposed over said third level;
forming a fourth metal layer disposed over said third metal layer;
processing a fourth level comprising a second single crystal silicon layer,
wherein said fourth level is disposed over said fourth metal layer,
wherein each of said plurality of second transistors comprises a metal gate, and
wherein said second metal layer comprises a power delivery network; and
forming a via disposed through said second level and through said third level,
wherein each of said plurality of third transistors comprises a metal gate,
wherein said second level comprises a first array of memory cells,
wherein said third level comprises a second array of memory cells,
wherein formation of said plurality of second transistors comprises a first lithography step,
wherein formation of said plurality of third transistors comprises a second lithography step,
wherein said first level comprises input and output (“IO”) circuits,
wherein connections of said device to external devices comprises said input and output (“IO”) circuits, and
wherein said second level is disposed over said first level; processing a connection path from said third metal layer to said second metal layer, wherein said connection path comprises said via.
7 . The method according to claim 6 , further comprising:
processing a power delivery path to at least one of said plurality of second transistors,
wherein said power delivery path comprises at least a part of said second metal layer.
8 . The method according to claim 6 ,
wherein at least one of said metal gates comprises tungsten.
9 . The method according to claim 6 , further comprising:
processing memory control circuits,
wherein said memory control circuits comprise a portion of said plurality of first transistors.
10 . The method according to claim 6 , further comprising:
processing power control circuits,
wherein said power control circuits comprise a portion of said plurality of first transistors.
11 . The method according to claim 6 , further comprising:
processing a power delivery path to at least one of said plurality of second transistors,
wherein said power delivery path comprises said via.
12 . A method to process a semiconductor device, the method comprising:
providing a substrate;
processing said substrate to form a first level comprising a first single crystal silicon layer and a plurality of first transistors;
forming a first metal layer;
forming a second metal layer,
wherein interconnection of said plurality of first transistors comprises said first metal layer and said second metal layer;
processing a second level comprising a plurality of second transistors;
processing a third level comprising a plurality of third transistors,
wherein said third level is disposed over said second level;
forming a third metal layer disposed over said third level;
forming a fourth metal layer disposed over said third metal layer;
processing a fourth level comprising a second single crystal silicon layer,
wherein said fourth level is disposed over said fourth metal layer,
wherein each of said plurality of second transistors comprises a metal gate, and
wherein said second metal layer comprises a power delivery network; and
forming a via disposed through said second level and through said third level,
wherein each of said plurality of third transistors comprises a metal gate,
wherein said second level comprises a first array of memory cells,
wherein said third level comprises a second array of memory cells, and
wherein said first level comprises power control circuits controlling power delivery to said second transistors,
wherein said power control circuits comprise a portion of said plurality of said first transistors, and
wherein said second level is disposed over said first level; processing a power delivery to at least one of said plurality of second transistors, wherein said power delivery path comprises at least a part of said second metal layer.
13 . The method according to claim 12 , further comprising:
processing a connection path from said third metal layer and said second metal layer,
wherein said connection path comprises said via.
14 . The method according to claim 12 ,
wherein at least one of said metal gates comprises tungsten.
15 . The method according to claim 12 , further comprising:
processing memory control circuits,
wherein said memory control circuits comprise a portion of said plurality of first transistors.
16 . The method according to claim 12 , further comprising:
processing another power delivery path to at least one of said plurality of second transistors,
wherein said another power delivery path comprises said via.