Granted Patent
B2
US 12,364,041 · App. 18/105,407 · Granted Jul 15, 2025
Semiconductor device comprising transistor
H10F39/8053H01L21/76802H10D30/673H10D30/6734H10D30/6739H10D86/021H10D86/423H10D86/451H10D86/60H10D87/00H10D99/00H01L24/32H01L24/48H01L24/73H01L2224/32225H01L2224/48227H01L2224/48463H01L2224/73265H01L2924/181H10B41/70H10D30/6736H10D84/08H10D84/811H10F39/8063
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Abstract
A minute transistor is provided. A transistor with low parasitic capacitance is provided. A transistor having high frequency characteristics is provided. A semiconductor device including the transistor is provided. A semiconductor device includes a first opening, a second opening, and a third opening which are formed by performing first etching and second etching. By the first etching, the first insulator is etched for forming the first opening, the second opening, and the third opening. By the second etching, the first metal oxide, the second insulator, the third insulator, the fourth insulator, the second metal oxide, and the fifth insulator are etched for forming the first opening; the first metal oxide, the second insulator, and the third insulator are etched for forming the second opening; and the first metal oxide is etched for forming the third opening.
Claims (47)
1. A semiconductor device comprising:
a transistor comprising:
a first conductor;
a first insulating film over the first conductor;
an oxide semiconductor layer over the first insulating film;
a source electrode and a drain electrode over the oxide semiconductor layer;
a gate insulating film over the oxide semiconductor layer; and
a gate electrode overlapping with the oxide semiconductor layer,
a first insulator over the oxide semiconductor layer;
a second insulator over the first insulator;
a third insulator over the second insulator;
a fourth insulator over the third insulator;
a second conductor over the fourth insulator, the second conductor reaching the first conductor through a first opening in the first insulating film, the first insulator, the second insulator, and the third insulator; and
a third conductor reaching the gate electrode through a second opening in the second insulator and the third insulator,
wherein the gate insulating film and the gate electrode are provided in an opening in the first insulator,
wherein a level of a topmost surface of the gate electrode is equal to a level of a topmost surface of the first insulator, and
wherein an opening diameter of the first opening in the third insulator is smaller than an opening diameter of the first opening in the second insulator.
2. The semiconductor device according to claim 1 ,
wherein an opening diameter of the first opening in the first insulating film is different from an opening diameter of the first opening in the first insulator.
3. The semiconductor device according to claim 1 ,
wherein an opening diameter of the first opening in the first insulating film is smaller than an opening diameter of the first opening in the first insulator.
4. The semiconductor device according to claim 1 ,
wherein the oxide semiconductor layer comprises indium and zinc.
5. A semiconductor device comprising:
a transistor comprising:
a first conductor;
a first insulating film over the first conductor;
a metal oxide over the first insulating film;
an oxide semiconductor layer over the metal oxide;
a source electrode and a drain electrode over the oxide semiconductor layer;
a gate insulating film over the oxide semiconductor layer; and
a gate electrode overlapping with the oxide semiconductor layer,
a first insulator over the oxide semiconductor layer;
a second insulator over the first insulator;
a third insulator over the second insulator;
a fourth insulator over the third insulator;
a second conductor over the fourth insulator, the second conductor reaching the first conductor through a first opening in the first insulating film, the first insulator, the second insulator, and the third insulator; and
a third conductor reaching the gate electrode through a second opening in the second insulator and the third insulator,
wherein the gate insulating film and the gate electrode are provided in an opening in the first insulator,
wherein a level of a topmost surface of the gate electrode is equal to a level of a topmost surface of the first insulator, and
wherein an opening diameter of the first opening in the third insulator is smaller than an opening diameter of the first opening in the second insulator.
6. The semiconductor device according to claim 5 ,
wherein an opening diameter of the first opening in the first insulating film is different from an opening diameter of the first opening in the first insulator.
7. The semiconductor device according to claim 5 ,
wherein an opening diameter of the first opening in the first insulating film is smaller than an opening diameter of the first opening in the first insulator.
8. The semiconductor device according to claim 5 ,
wherein each of the metal oxide and the oxide semiconductor layer comprises indium and zinc.
Priority Claims (1)
JP 2015-069654
· Mar 30, 2015
· national
Continuity (4)
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