IP Library › Granted Patent US 12,588,545
Granted Patent B2
US 12,588,545 · App. 17/896,707 · Granted Mar 24, 2026

Electronic chip with contacts

Inventors: Olivier Ory (Tours, FR); Michael De Cruz (Monnaie, FR)
Assignee: STMICROELECTRONICS (TOURS) SAS
H01L23/3114H01L24/05H01L24/13H01L24/18H01L2224/05569H01L2224/12105H01L2924/18162
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 12,588,545
App. No.
17/896,707
Granted
Mar 24, 2026
Kind
B2
Abstract

The present disclosure relates to at least one embodiment of an electronic chip that includes an integrated circuit formed in and on a semiconductor substrate. The flanks of the substrate being coated with a second protective resin. The electronic chip further includes at least one metal contact arranged on a first face of the semiconductor substrate and extending laterally beyond the flanks of the second protective resin. Said at least one metal contact may have a flat connection face extending continuously in part under the semiconductor substrate and extending laterally beyond the flanks of the second protective resin.

Claims (52)

1 . A device, comprising:

a first side and a second side opposite to the first side;

a first resin at the first side, the first resin including a first flank;

a second resin at the second side, the second resin is different from the first resin, and the second resin includes a second flank coplanar with the first flank;

a substrate in the first resin and encased between the first resin and the second resin, the substrate including an integrated circuit;

an interconnection stack on the substrate, the interconnection stack partially covered by the second resin;

a metal contact at the second side, the metal contact includes a bracket portion that protrudes from the first flank of the first resin, the metal contact includes:

an encased portion in the second resin, the encased portion having a first end surface covered by second resin; and

a bracket portion that extends outward from the flank of the first resin; and

a reconnection stud extending from the encased portion to the interconnection stack, the reconnection stud coupling the interconnection stack to the metal contact, and the reconnection stud including a third flank coplanar with the first flank and the second flank, and a second end surface opposite to the third flank and coplanar with the first end surface.

2 . The device of claim 1 , wherein the reconnection stud is partially covered by the second resin.

3 . The device of claim 1 , wherein:

the encased portion has a first length that extends from the bracket portion to a first end of the encased portion in the second resin, the first length is transverse to the flank of the first resin; and

the bracket portion has a second length that extends from the flank of the first resin to a second end of the bracket portion opposite to the first end of the encased portion, the second length is less than the first length, the second length is transverse to the flank of the first resin.

4 . The device of claim 1 , wherein the metal contact is one of a plurality of metal contacts.

5 . A device, comprising:

a first side and a second side opposite to the first side;

a first resin layer that is at the first side, the first resin layer includes a first face and a first flank transverse to the first face;

a second resin layer at the second side, the second resin layer includes a second flank transverse to the first face, and the second flank is coplanar with the first flank;

a metal contact at the first side, the metal contact includes:

a second face flush with the first face of the first resin layer;

a third face opposite to the second face; and

a bracket portion that protrudes from the flank;

a reconnection stud that is on the third face of the metal contact, the reconnection stud includes a third flank that is coplanar with the first flank and the second flank, and the reconnection stud includes an end surface that is exposed from the first resin layer and the second resin layer;

an interconnection stack that is on the reconnection stud; and

a substrate including an integrated circuit that is within the second resin layer and is on the interconnection stack.

6 . The device of claim 5 , wherein:

the metal contact portion further includes an encased portion in the second resin layer, the encased portion has a first length that extends from the bracket portion to a first end of the encased portion in the second resin layer, the first length is transverse to the flank of the first resin layer; and

the bracket portion has a second length that extends from the flank of the first resin layer to a second end of the bracket portion opposite to the first end of the encased portion, the second length is less than the first length, the second length is transverse to the flank of the first resin layer.

7 . The device of claim 5 , wherein the metal contact is one of a plurality of metal contacts.

8 . The device of claim 5 , wherein the first resin layer has a first height and the second resin layer has a second height, and the first height is greater than the second height.

9 . The device of claim 5 , wherein the integrated circuit is encased within the first resin layer and the second resin layer.

10 . The device of claim 5 , wherein the integrated circuit is coupled to the metal contact through the reconnection stud and the interconnection stack.

11 . A device, comprising:

a first side and a second side opposite to the first side;

a first protective resin at the first side, the first protective resin including one or more first flanks;

a second protective resin at the second side, the second protective resin includes one or more second flanks, and the one or more second flanks are coplanar with the one or more first flanks;

a substrate that has a first surface, a second surface opposite to the first surface, and one or more third flanks that extend from the first surface to the second surface, the substrate includes an integrated circuit, and the one or more third flanks and the second surface are covered by the first protective resin;

an interconnection stack on the first surface of the substrate, and the interconnection stack is at least partially covered by the second protective resin;

a reconnection stud on the interconnection stack, the reconnection stud includes a fourth flank that is coplanar with a corresponding first flank of the one or more first flanks of the first protective resin and a corresponding second flank of the one or more second flanks of the second protective resin, and the fourth flank is exposed from the first protective resin and the second protective resin; and

a metal contact coupled to the reconnection stud, the metal contact includes a bracket portion that protrudes outward and beyond a corresponding first flank of the one or more first flanks and a portion of the metal contact is within the second protective resin.

12 . The device of claim 11 , wherein the second protective resin at the second side includes one or more third flanks, and the one or more third flanks are coplanar with the one or more first flanks of the first protective resin.

13 . The device of claim 12 , wherein the metal contact protrudes outward and beyond a corresponding third flank of the one or more third flanks.

14 . The device of claim 13 , wherein the reconnection stud fully covers the portion of the metal contact within the second protective resin.

15 . The device of claim 13 , wherein the first protective resin and the second protective resin are made of different materials.

16 . The device of claim 11 , wherein the reconnection stud fully covers the portion of the metal contact within the second protective resin.

17 . The device of claim 11 , wherein the first protective resin and the second protective resin are made of the same material.

18 . The device of claim 11 , wherein the first protective resin and the second protective resin are made of different materials.

19 . The device of claim 11 , wherein:

the portion of the metal contact within the second protective resin has a first length that extends from the bracket portion to a first end of the portion of the metal contact that terminates within the second protective resin, and the first length is transverse to the one or more first flanks; and

the bracket portion of the metal contact has a second length that extends from the corresponding first flank of the one or more first flanks from which the bracket portion protrudes outward and beyond, the second length is different from the first length, and the second length is transverse to the one or more first flanks.

20 . The device of claim 19 , wherein the second length is less than the first length.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Nov 14, 2022
From: ORY, OLIVIER; DE CRUZ, MICHAEL
To: STMICROELECTRONICS (TOURS) SAS
Reel/Frame 061762/0515 →
Priority Claims (1)
FR 21/09092 · Aug 31, 2021 · national
Continuity (1)
Related Publication 20230068222A1 · Mar 2, 2023
References Cited (77)
US 4640721A · Uehara et al. · 1987 [cited by applicant]
US 5428248A · Cha · 1995 [cited by applicant]
US 5606198A · Ono et al. · 1997 [cited by applicant]
US 5770888A · Song et al. · 1998 [cited by applicant]
US 5910687A · Chen et al. · 1999 [cited by applicant]
US 5998877A · Ohuchi · 1999 [cited by applicant]
US 6326689B1 · Thomas · 2001 [cited by applicant]
US 6498099B1 · McLellan et al. · 2002 [cited by applicant]
US 7935568B2 · Oganesian et al. · 2011 [cited by applicant]
US 8278213B2 · Kameyama et al. · 2012 [cited by applicant]
US 8551815B2 · Avsian et al. · 2013 [cited by applicant]
US 9177836B1 · Liu · 2015 [cited by examiner]
US 11393785B2 · Fallourd et al. · 2022 [cited by applicant]
US 20030067001A1 · Poo et al. · 2003 [cited by applicant]
US 20050095750A1 · Lo et al. · 2005 [cited by applicant]
US 20060012967A1 · Asai et al. · 2006 [cited by applicant]
US 20060170112A1 · Tanaka et al. · 2006 [cited by applicant]
US 20070026567A1 · Beer et al. · 2007 [cited by applicant]
US 20070096295A1 · Burtzlaff et al. · 2007 [cited by applicant]
US 20090243097A1 · Koroku et al. · 2009 [cited by applicant]
US 20100246152A1 · Lin et al. · 2010 [cited by applicant]
US 20110018116A1 · Feng · 2011 [cited by applicant]
US 20110042799A1 · Kang et al. · 2011 [cited by applicant]
US 20110189822A1 · Sasaki et al. · 2011 [cited by applicant]
US 20110274299A1 · Shaw et al. · 2011 [cited by applicant]
US 20110304008A1 · Yang · 2011 [cited by applicant]
US 20120034760A1 · Schuderer et al. · 2012 [cited by applicant]
US 20120178251A1 · Lim et al. · 2012 [cited by applicant]
US 20120282735A1 · Ahn et al. · 2012 [cited by applicant]
US 20130161813A1 · Miki · 2013 [cited by applicant]
US 20130267124A1 · Chang et al. · 2013 [cited by applicant]
US 20140054796A1 · Gong et al. · 2014 [cited by applicant]
US 20150007939A1 · Sherrer · 2015 [cited by examiner]
US 20150228557A1 · Cheng et al. · 2015 [cited by applicant]
US 20150255349A1 · Holden et al. · 2015 [cited by applicant]
US 20150269472A1 · Finn et al. · 2015 [cited by applicant]
US 20160172275A1 · Marchisi · 2016 [cited by examiner]
US 20170025356A1 · Xue · 2017 [cited by applicant]
US 20170077022A1 · Scanlan et al. · 2017 [cited by applicant]
US 20170084686A1 · Wang et al. · 2017 [cited by applicant]
US 20170222019A1 · Wang et al. · 2017 [cited by applicant]
US 20170271246A1 · Macheiner · 2017 [cited by examiner]
US 20170316957A1 · Chen et al. · 2017 [cited by applicant]
US 20170323840A1 · Chiu et al. · 2017 [cited by applicant]
US 20180005912A1 · Oh et al. · 2018 [cited by applicant]
US 20180008920A1 · Peterson, II et al. · 2018 [cited by applicant]
US 20180033781A1 · Zhou et al. · 2018 [cited by applicant]
US 20180068920A1 · Leung et al. · 2018 [cited by applicant]
US 20180204780A1 · Chiu et al. · 2018 [cited by applicant]
US 20180269138A1 · Villamor · 2018 [cited by examiner]
US 20180330966A1 · Scanlan et al. · 2018 [cited by applicant]
US 20180342453A1 · Ziglioli · 2018 [cited by examiner]
US 20190244853A1 · Berger et al. · 2019 [cited by applicant]
US 20200126877A1 · Takaoka · 2020 [cited by applicant]
US 20210175094A1 · De Cruz · 2021 [cited by examiner]
US 20210175203A1 · Fallourd · 2021 [cited by examiner]
US 20220302013A1 · Pyun · 2022 [cited by examiner]
US 20220344303A1 · Fallourd et al. · 2022 [cited by applicant]
US 20220375840A1 · Ory et al. · 2022 [cited by applicant]
US 20230178380A1 · De Cruz et al. · 2023 [cited by applicant]
CN 1812075A · 2006 [cited by applicant]
CN 1835196B · 2006 [cited by applicant]
CN 103364455A · 2013 [cited by applicant]
CN 104022043A · 2014 [cited by applicant]
CN 105374762A · 2016 [cited by applicant]
CN 107808871A · 2018 [cited by applicant]
CN 108807197A · 2018 [cited by applicant]
CN 112908935A · 2021 [cited by applicant]
EP 1085570A2 · 2001 [cited by applicant]
EP 3154085A1 · 2017 [cited by applicant]
EP 3211670A1 · 2017 [cited by applicant]
EP 3282476A1 · 2018 [cited by applicant]
JP 2009076839A · 2009 [cited by applicant]
KR 20030008646A · 2003 [cited by applicant]
KR 100595885B1 · 2006 [cited by applicant]
WO WO2020250660A1 · 2020 [cited by applicant]
Ganjei, John, “Improved QFN Reliability by Flank Tin Plating Process after Singulation,” 10th International Microsystems, Packaging, Assembly and Circuits Technology Conference (IMPACT), Taipei, TW, pp. 137-140 (Year: 2… [cited by examiner]