IP Library Granted Patent US 10,002,844
Granted Patent B1
US 10,002,844 · App. 15/387,385 · Granted Jun 19, 2018

Bonded structures

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Quick Facts
Patent No.
US 10,002,844
App. No.
15/387,385
Granted
Jun 19, 2018
Kind
B1
Abstract

A bonded structure can include a first element having a first conductive interface feature and a second element having a second conductive interface feature. An integrated device can be coupled to or formed with the first element or the second element. The first conductive interface feature can be directly bonded to the second conductive interface feature to define an interface structure. The interface structure can be disposed about the integrated device in an at least partially annular profile to connect the first and second elements.

Claims (34)

1. A bonded structure comprising:

a first element having a first interface feature;

a second element having a second interface feature; and

an integrated device coupled to or formed with the first element or the second element,

the first interface feature directly bonded to the second interface feature to define an interface structure, the interface structure disposed around the integrated device to define an effectively closed profile to connect the first and second elements, the effectively closed profile substantially sealing an interior region of the bonded structure from gases diffusing into the interior region.

2. The bonded structure of claim 1 , wherein the first interface feature comprises a first conductive interface feature and the second interface feature comprises a second conductive interface feature.

3. The bonded structure of claim 1 , wherein the effectively closed profile comprises a completely closed shape.

4. The bonded structure of claim 1 , wherein the first element comprises a cap and the second element comprises a carrier, the cap bonded to the carrier to define a cavity in which the integrated device is disposed.

5. The bonded structure of claim 1 , wherein the first element comprises a first integrated device die and the second element comprises a second integrated device die.

6. The bonded structure of claim 1 , wherein the first interface feature comprises a plurality of conductive interface features spaced apart from one another by one or more intervening non-conductive interface features.

7. The bonded structure of claim 6 , wherein the plurality of conductive interface features comprise a plurality of incompletely or completely connected conductors that collectively define an enclosed region.

8. The bonded structure of claim 6 , wherein the one or more non-conductive interface features comprises silicon oxide.

9. The bonded structure of claim 1 , further comprising a third interface feature spaced apart by a first spacing from the first interface feature on the first element, a first non-conductive interface feature being disposed between the first and third interface features, the first interface feature having a first width that is greater than the first spacing.

10. A bonded structure comprising:

a first element;

a second element;

an integrated device coupled to or formed within the first element or the second element; and

an interface structure disposed between the first element and the second element, the interface structure comprising a first conductive interface feature extending in a direction from the first element to the second element, a second conductive interface feature extending in a direction from the first element to the second element, and a solid state non-conductive interface feature disposed laterally between the first and second conductive interface features, the interface structure disposed about the integrated device to define an effectively closed profile to connect the first element and the second element.

11. The bonded structure of claim 10 , wherein the first conductive interface feature comprises a first conductive portion on the first element and a second conductive portion on the second element, the first conductive portion being bonded to the second conductive portion.

12. The bonded structure of claim 11 , wherein the first conductive portion is directly bonded to the second conductive portion without an intervening adhesive.

13. The bonded structure of claim 10 , wherein the effectively closed profile comprises a complete annulus.

14. The bonded structure of claim 10 , wherein the first element comprises a cap and the second element comprises a carrier, the cap bonded to the carrier to define a cavity in which the integrated device is disposed.

15. The bonded structure of claim 10 , further comprising a crosswise conductor connecting the first and second conductive interface features.

16. The bonded structure of claim 10 , further comprising an electrical interconnect extending through the non-conductive interface feature to provide electrical communication between the first and second elements.

17. A bonded structure comprising:

a first element;

a second element;

an integrated device coupled to or formed with the first element or the second element;

an interface structure disposed between the first element and the second element, the interface structure comprising

a first conductive interface feature laterally enclosing the integrated device, the conductive interface feature continuously extending between the first and second elements to form at least one of an electrical, mechanical, or thermal connection between the two elements, and

a non-conductive interface feature continuously extending between the first and second elements.

18. The bonded structure of claim 17 , wherein the interface structure creates a hermetic seal around the integrated device.

19. The bonded structure of claim 17 , wherein the first and second elements define a cavity and the interface structure hermetic seals the cavity.

20. The bonded structure of claim 17 , wherein the integrated device is a sensing device.

Assignments (4)
CHANGE OF NAME Recorded Oct 20, 2025
From: INVENSAS BONDING TECHNOLOGIES, INC.
To: ADEIA SEMICONDUCTOR BONDING TECHNOLOGIES INC.
Reel/Frame 073173/0300 →
SECURITY INTEREST Recorded Jun 1, 2020
From: ROVI SOLUTIONS CORPORATION; ROVI TECHNOLOGIES CORPORATION; ROVI GUIDES, INC.; TIVO SOLUTIONS INC.; VEVEO, INC.; INVENSAS CORPORATION; INVENSAS BONDING TECHNOLOGIES, INC.; TESSERA, INC.; TESSERA ADVANCED TECHNOLOGIES, INC.; DTS, INC.; PHORUS, INC.; IBIQUITY DIGITAL CORPORATION
To: BANK OF AMERICA, N.A.
Reel/Frame 053468/0001 →
CHANGE OF NAME Recorded Jun 28, 2017
From: ZIPTRONIX , INC.
To: INVENSAS BONDING TECHNOLOGIES, INC.
Reel/Frame 043029/0657 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 11, 2017
From: WANG, LIANG; KATKAR, RAJESH; DELACRUZ, JAVIER A.; SITARAM, ARKALGUD R.
To: ZIPTRONIX, INC.
Reel/Frame 040945/0601 →
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