Thermal oxide equivalent low temperature ALD oxide for dual purpose gate oxide and method for producing the same
Methods of forming conformal low temperature gate oxides on a HV I/O and a core logic and the resulting devices are provided. Embodiments include providing a HV I/O and core logic laterally separated on a Si substrate, each having a fin; forming a gate oxide layer over each fin and the Si substrate; forming a silicon oxy-nitride layer over the gate oxide layer; forming a sacrificial oxide layer over the silicon oxy-nitride layer; removing the sacrificial oxide and silicon oxy-nitride layers and thinning the gate oxide layer; forming a second gate oxide layer over the thinned gate oxide layer; forming a silicon oxy-nitride layer over the second gate oxide layer; removing the silicon oxy-nitride and second gate oxide layers over the core logic fin portion; forming an IL over the core logic fin portion; and forming a HfO x layer over the second silicon oxy-nitride layer and ILs.
1. A method comprising:
providing a high voltage input/output (HV I/O) and a core logic laterally separated on a silicon (Si) substrate, each HV I/O and core logic having a fin;
forming a first gate oxide layer over each fin and the Si substrate;
forming a first silicon oxy-nitride layer over the first gate oxide layer;
forming a sacrificial oxide layer over the silicon oxy-nitride layer;
removing the sacrificial oxide and first silicon oxy-nitride layers and thinning the first gate oxide layer;
forming a second gate oxide layer over the thinned gate oxide layer;
forming a second silicon oxy-nitride layer over the second gate oxide layer;
removing the second silicon oxy-nitride and gate oxide layers over the core logic fin and a portion of the Si substrate;
forming an interfacial layer (IL) over the core logic fin and the portion of the Si substrate; and
forming a hafnium oxide (HfOx) layer over the second silicon oxy-nitride layer and ILs.
2. The method according to claim 1 , comprising forming the first gate oxide layer by:
forming ALD silicon dioxide (SiO 2 ) by plasma-enhanced atomic layer deposition (PEALD) or thermal ALD at a temperature of 385° C. to 425° C.; and
performing a remote plasma treatment using oxygen (O 2 ) or ozone (O 3 ) gas to generate radical oxygen for ALD SiO 2 growth.
3. The method according to claim 1 , comprising forming the first silicon oxy-nitride layer by:
plasma nitridation at a room temperature and up to 450° C. with 9% to 12% of nitrogen (N); and
post nitridation annealing at a temperature of 900° C. to 1000° C. for 30 seconds to 60 seconds.
4. The method according to claim 1 , comprising forming the second silicon oxy-nitride layer by:
plasma nitridation and annealing 3% to 5% of N at a room temperature and up to 450° C.
5. The method according to claim 1 , wherein the sacrificial oxide layer comprises titanium dioxide (TiO 2 ), aluminium oxide (Al 2 O 3 ), silicon nitride (Si 3 N 4 ), lanthanum oxide (LaO x ), SiO 2 , thermal ALD oxide or HfO x .
6. The method according to claim 1 , wherein the first and second gate oxide layers comprises SiO 2 or thermal ALD oxide.
7. The method according to claim 1 , wherein the thinned gate and second gate oxide layers are an inner spacer.
8. The method according to claim 1 , comprising removing the sacrificial oxide layer by dilute hydrofluoric acid (dHF) etching.
9. The method according to claim 1 , comprising thinning the first gate oxide layer to a thickness of 22 Å to 35 Å by wet etching, wherein the wet etching comprises a 100:1 dHF solution (100 parts water (H 2 O), 1 part HF).
10. The method according to claim 1 , comprising removing the second silicon oxy-nitride and thinned gate oxide layer over the core logic fin and the portion of the Si substrate by:
forming a photoresist over the second silicon oxy-nitride layer over the HV I/O fin and the portion of the Si substrate;
removing the second silicon oxy-nitride layer over the thinned gate oxide layer over the core logic fin by ultraviolet (UV) lithography;
removing the thinned gate oxide layer over the core logic fin and the portion of the Si substrate by dHF etching; and
removing the photoresist.
11. The method according to claim 1 , comprising forming the IL over the core logic fin by O 3 /HCL process.
12. A method comprising:
providing a high voltage input/output (HV I/O) and a core logic laterally separated on a silicon (Si) substrate, each HV I/O and core logic having a fin;
forming a first gate oxide layer to a thickness of 30 angstrom (A) to 45 Å over each fin and the Si substrate by plasma-enhanced atomic layer deposition (PEALD) or thermal ALD at a temperature of 385° C. to 425° C., and performing a remote plasma treatment using O 2 or O 3 gas to generate radical O 2 for ALD SiO 2 growth;
forming a first silicon oxy-nitride layer over the first gate oxide layer by plasma nitridation at a room temperature and up to 450° C. with 9% to 12% of nitrogen (N) and post nitridation annealing at a temperature of 900° C. to 1000° C. for 30 seconds to 60 seconds;
forming a sacrificial oxide layer over the silicon oxy-nitride layer by PEALD;
removing the sacrificial oxide and first silicon oxy-nitride layers by dilute hydrofluoric acid (dHF) etching;
thinning the gate oxide layer to a thickness of 22 Å to 35 Å by wet etching;
forming a second gate oxide layer to a thickness of 1 Å to 35 Å over the thinned gate oxide layer by PEALD or thermal ALD;
forming a second silicon oxy-nitride layer over the second gate oxide layer;
removing the second silicon oxy-nitride and gate oxide layers over the core logic fin and a portion of the Si substrate by ultraviolet (UV) lithography and dHF etching, respectively;
forming an interfacial layer (IL) to a thickness of 6 Å to 12 Å over the core logic fin and the portion of the Si substrate by O 3 /HCL process; and
forming a hafnium oxide (HfOx) layer to a thickness of 15 Å to 28 Å over the second silicon oxy-nitride layer and ILs by ALD.
13. The method according to claim 12 , wherein the sacrificial oxide layer comprises titanium dioxide (TiO 2 ), aluminium oxide (Al 2 O 3 ), silicon nitride (Si 3 N 4 ), lanthanum oxide (LaO x ), SiO 2 , thermal ALD oxide or HfO x .
14. The method according to claim 12 , wherein the first and second gate oxide layers comprises SiO 2 or thermal ALD oxide.
15. The method according to claim 12 , wherein the wet etching comprises a 100:1 dHF solution (100 parts H 2 O, 1 part HF).