Back biasing of FD-SOI circuit blocks
A microelectronic circuit structure comprises a stack of bonded layers comprising a bottom layer and at least one upper layer. At least one of the upper layers comprises an oxide layer having a back surface and a front surface closer to the bottom layer than the back surface, and a plurality of FD-SOI transistors built on the front surface. At least a first back gate line and a second back gate line extend separate from each other above the back surface for independently providing a first back gate bias to a first group of transistors and a second back gate bias to a second different group of transistors.
1. A microelectronic circuit structure comprising a stack of bonded layers including a bottom layer and at least one upper layer, the at least one upper layer comprising an oxide layer having a back surface and a front surface closer to said bottom layer than said back surface, a plurality of fully depleted silicon-on-insulator (FD-SOI) transistors built on the front surface of the oxide layer; and at least a first back gate line and a second separate back gate line in direct contact with and extending above the back surface of the oxide layer for independently providing a first back gate bias to a first group of said plurality of transistors and a second back gate bias to a second different group of said plurality of transistors and maintaining a third group of said plurality of transistors free from electrical communication with the first and second back gate lines and other back gate lines, wherein a first circuit block comprises said first group of said plurality of transistors and a second circuit block comprises said second group of said plurality of transistors, wherein the first and the second circuit blocks are different types of functional circuit blocks configured to receive the independent first and second back gate bias respectively, wherein an end of the first back gate line extends on the oxide layer and vertically overlaps a region defined between the first and the second groups of the transistors,
wherein said at least one upper layer comprises a first upper layer and a second upper layer, wherein the second upper layer is bonded to the first upper layer through direct bonding interconnect (DBI), and
wherein first back gate lines for providing said first back gate bias to respective transistors of the first and second upper layers in said first group are connected to each other.
2. The circuit structure according to claim 1 , wherein said bottom layer comprises a SOl integrated circuit.
3. The circuit structure according to claim 2 , wherein said bottom layer comprises: a lower silicon substrate, an oxide layer having a back surface and a front surface closer to said upper layer than said back surface, and a plurality of FD-SOI transistors built on the front surface of said oxide layer.
4. The circuit structure according to claim 1 , wherein said at least one upper layer comprises at least the first upper layer bonded to the bottom layer through direct bonding interconnect (DBI).
5. The circuit structure according to claim 1 , wherein second back gate lines for providing said second back gate bias to respective transistors of the first and second upper layers in said second group are unconnected to each other for independently providing said second back gate bias to the respective transistors of the first and second upper layers in said second group.
6. The circuit structure according to claim 1 , wherein said upper layer comprises at least first and second different functional circuit blocks, the first back gate bias provided to the first circuit block is different from the second back gate bias provided to comprising said first group of transistors and the second circuit block comprising said second group of transistors.
7. The circuit structure according to claim 6 , wherein said first circuit block comprises a higher-frequency operating circuit block and said second circuit block comprises a slower frequency operating circuit block.
8. The circuit structure according to claim 7 , comprising at least a first clock line and a separate second clock line for independently providing a higher-frequency clock signal and a lower-frequency clock signal to said higher-frequency operating circuit block and said slower-frequency operating circuit block, respectively.
9. The circuit structure according to claim 8 , wherein said higher-frequency operating circuit block comprises memory including faster switching transistors and said slower-frequency operating circuit block comprises memory including slower switching transistors.
10. The circuit structure according to claim 9 , comprising a plurality of faster data lines and a plurality of separate slower data lines for transferring data to or from said faster memory and said slower memory, respectively.
11. A microelectronic circuit comprising:
the circuit structure according to claim 10 ;
power supply circuitry configured to selectively supply said first back gate bias and said second back gate bias to said first back gate line and said second back gate line, respectively, through separate first interconnections;
clock generating circuitry configured to independently supply said higher-frequency clock signal and said lower-frequency clock signal to said first clock line and said second clock lines, respectively, through separate second interconnections; and
memory control circuitry connected to said plurality of faster data lines and said plurality of slower data lines through separate third interconnections and configured to selectively control said faster address lines and said slower data lines to transfer data to or from the faster memory and the slower memory, respectively.
12. The circuit structure according to claim 6 , wherein said first circuit block comprises a processor and said second circuit block comprises a memory, the processor comprising said first group of transistors and the memory comprising said second group of transistors.
13. A microelectronic circuit comprising:
the circuit structure according to claim 1 ; and
power supply circuitry configured to selectively supply the first back gate bias and the second back gate bias to said first back gate line and said second back gate line, respectively, through separate interconnections.
14. The microelectronic circuit according to claim 13 , wherein said power supply circuitry is configured to dynamically vary said first back gate bias independently from the second back gate bias.
15. The microelectronic circuit according to claim 13 , wherein said power supply is configured to provide a constant first back gate bias independent of the second back gate bias.
16. The microelectronic circuit according to claim 13 , wherein said power supply circuitry is configured to selectively supply said first back gate bias to said first back gate line for compensating for variations of one or nominal parameters of the transistors of said first group.
17. The microelectronic circuit structure of claim 1 , wherein the first back gate lines are configured to be dynamically biased independently of the second back gate lines.
18. The microelectronic circuit structure of claim 1 , wherein the end of first back gate lines laterally protrudes outward from a vertical edge of the first group of the transistors.