Diffusion barrier collar for interconnects
Representative implementations of techniques and devices are used to reduce or prevent conductive material diffusion into insulating or dielectric material of bonded substrates. Misaligned conductive structures can come into direct contact with a dielectric portion of the substrates due to overlap, especially while employing direct bonding techniques. A barrier interface that can inhibit the diffusion is disposed generally between the conductive material and the dielectric at the overlap.
1. A microelectronic assembly, comprising:
a first substrate having a first substantially planar surface, the first substrate comprising an insulating material;
a second substrate having a first substantially planar surface, the second substrate comprising an insulating material, the first surface of the second substrate directly bonded to the first surface of the first substrate without an adhesive;
a first conductive interconnect structure embedded in the first substrate, a surface of the first conductive interconnect structure being exposed through the first surface of the first substrate to form a first interconnect pad;
a second conductive interconnect structure embedded in the second substrate, a surface of the second conductive interconnect structure being exposed through the first surface of the second substrate to form a second interconnect pad; and
a first barrier interface disposed at the first substantially planar surface of the first substrate and at least partially surrounding a perimeter of the first interconnect pad thereby separating the first conductive interconnect structure from the insulating material at the first substantially planar surface, the first barrier interface comprising a first portion of the first barrier interface at least partially surrounding the first conductive interconnect and contacting the second conductive interconnect, and a second portion of the first barrier interface at least partially surrounding the first conductive interconnect without contacting the second conductive interconnect, the first barrier interface comprising a material different from the insulating material of the first substrate, at least a portion of the first barrier interface extending a predetermined depth into the first substrate, the predetermined depth being less than a depth of the first conductive interconnect structure.
2. The microelectronic assembly of claim 1 , wherein the first barrier interface is arranged to inhibit a diffusion of a material of the second conductive interconnect structure into the first substrate.
3. The microelectronic assembly of claim 1 , wherein the first barrier interface is comprised of a conductive material.
4. The microelectronic assembly of claim 3 , wherein the first barrier interface is comprised of cobalt, titanium nitride, tantalum nitride, nickel or a nickel alloy.
5. The microelectronic assembly of claim 1 , wherein the first barrier interface is a single layer that comprises:
a first portion that extends a predetermined depth into the first substrate, the predetermined depth being less than a depth of the first conductive interconnect structure, and
a second portion that extends from the first portion and along the surface of the first conductive interconnect structure.
6. The microelectronic assembly of claim 1 , wherein the first barrier interface is disposed over at least a portion of the first substantially planar surface of the first substrate, and is arranged to protect the first substantially planar surface from erosion due to planarization or polishing of the first substantially planar surface.
7. The microelectronic assembly of claim 1 , further comprising a second barrier interface disposed at the second substrate and at least partially surrounding a perimeter of the second interconnect pad, the second barrier interface comprising a material different from the insulating material of the second substrate.
8. The microelectronic assembly of claim 7 , where in the second barrier interface is arranged to inhibit a diffusion of a material of the first conductive interconnect structure into the second substrate.
9. The microelectronic assembly of claim 7 , wherein a diffusivity of the material of the first conductive interconnect structure or a diffusivity of the material of the second conductive interconnect structure into the material of the first barrier interface or the material of the second barrier interface is less than a diffusivity of the material of the first conductive interconnect structure or a diffusivity of the material of the second conductive interconnect structure into the material of the first substrate or the material of the second substrate.
10. The microelectronic assembly of claim 1 , wherein the material of the first substrate or the material of the second substrate comprises silicon oxide.
11. The microelectronic assembly of claim 1 , wherein the second interconnect pad is bonded to the first interconnect pad to form a single conductive structure.
12. The microelectronic assembly of claim 1 , wherein the second interconnect pad is misaligned with respect to the first interconnect pad, resulting in an overlap of the first interconnect pad beyond a perimeter of the second interconnect pad and/or an overlap of the second interconnect pad beyond the perimeter of the first interconnect pad.
13. The microelectronic assembly of claim 1 , wherein a width of the first interconnect pad is less than a width of the second interconnect pad, the first barrier interface disposed at the first substrate and at least partially surrounding the perimeter of the first interconnect pad, such that the combined width of the first interconnect pad and the first barrier interface is greater than the width of the second interconnect pad.
14. The microelectronic assembly of claim 1 , wherein a perimeter edge of the second interconnect pad is within a perimeter of the first barrier interface.
15. The microelectronic assembly of claim 1 , wherein the insulating material of the first substrate comprises silicon oxide material and the material of the second conductive interconnect structure comprises copper or a copper alloy.
16. The microelectronic assembly of claim 1 , wherein the first barrier interface comprises a dielectric material different from the insulating material of the second substrate.
17. The microelectronic assembly of claim 1 , wherein the first barrier interface is comprised of one or more of silicon nitride, silicon oxynitride, silicon carbide, silicon carbonitride, diamond, boron doped glass or oxide, or aluminum oxide.
18. The microelectronic assembly of claim 1 , wherein a width of the first barrier interface is at least 10% of a diameter of the second interconnect pad and the first barrier interface has a side surface contacting the first conductive interconnect structure and a bottom surface contacting the insulating material of the first substrate.
19. The microelectronic assembly of claim 1 , wherein a width of the first barrier interface is at least 20% of a diameter of the second interconnect pad.
20. The microelectronic assembly of claim 1 , wherein a relative lateral displacement of the first interconnect pad to the second interconnect pad is less than a width of the first barrier interface.
21. The microelectronic assembly of claim 1 , wherein the first barrier interface is embedded in the first substrate and extends into the first substrate to a depth less than or equal to a length of the first conductive structure.
22. The microelectronic assembly of claim 1 , wherein the second interconnect pad is misaligned with respect to the first interconnect pad an offset based on an average inaccuracy of a placement tool used to bond the second substrate to the first substrate.
23. A microelectronic assembly, comprising:
a first substrate having a first substantially planar surface, the first substrate comprising an insulating material;
a second substrate having a first substantially planar surface, the second substrate comprising an insulating material, the first surface of the second substrate directly bonded to the first surface of the first substrate without an adhesive;
a first conductive interconnect structure embedded in the first substrate, a surface of the first conductive interconnect structure being exposed through the first surface of the first substrate to form a first interconnect pad;
a second conductive interconnect structure embedded in the second substrate, a surface of the second conductive interconnect structure being exposed through the first surface of the second substrate to form a second interconnect pad; and
a first barrier interface disposed at the first substantially planar surface of the first substrate and at least partially surrounding a perimeter of the first interconnect pad thereby separating the first conductive interconnect structure from the insulating material at the first substantially planar surface, the first barrier interface comprising a first portion of the first barrier interface at least partially surrounding the first conductive interconnect and a second portion of the first barrier interface at least partially surrounding the first conductive interconnect without contacting the second conductive interconnect, the first barrier interface comprising a material different from the insulating material of the first substrate, at least a portion of the first barrier interface extending a predetermined depth into the first substrate, the predetermined depth being less than a depth of the first conductive interconnect structure.