IP Library › Granted Patent US 12,322,667
Granted Patent B2
US 12,322,667 · App. 17/806,253 · Granted Jun 3, 2025

Seal for microelectronic assembly

Inventors: Rajesh Katkar (San Jose, CA); Liang Wang (Milpitas, CA); Cyprian Emeka Uzoh (San Jose, CA); Shaowu Huang (Sunnyvale, CA); Guilian Gao (San Jose, CA); Ilyas Mohammed (Santa Clara, CA)
Assignee: ADEIA SEMICONDUCTOR BONDING TECHNOLOGIES INC.
H01L23/10B81B7/0032B81B7/0074B81C1/00261B81C1/00269B81C1/00333H01L23/02H01L23/04H01L23/053B81C2203/038
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 12,322,667
App. No.
17/806,253
Granted
Jun 3, 2025
Kind
B2
Abstract

Representative implementations of techniques and devices provide seals for sealing the joints of bonded microelectronic devices as well as bonded and sealed microelectronic assemblies. Seals are disposed at joined surfaces of stacked dies and wafers to seal the joined surfaces. The seals may be disposed at an exterior periphery of the bonded microelectronic devices or disposed within the periphery using the various techniques.

Claims (21)

1. A microelectronic assembly, comprising:

a first microelectronic component bonded at a first insulating surface to a second insulating surface of a second microelectronic component, the first insulating surface having a first conductive feature and the second insulating surface having a second conductive feature, the first insulating surface and the second insulating surface forming a bond joint where the first insulating surface and the second insulating surface make contact and the bond joint includes a dielectric-to-dielectric bond and a metal-to-metal bond; and

a continuous seal ring extending around a periphery of and at least to the bond joint, the continuous seal ring comprising a metallic material and sealing the bond joint between the first microelectronic component and the second microelectronic component.

2. The microelectronic assembly of claim 1 , wherein the continuous seal ring comprises a hermetic seal arranged to prevent fluid leakage at the bond joint greater than 1×10 −6 atm-cm3 per second.

3. The microelectronic assembly of claim 1 , wherein the microelectronic assembly comprises a microelectromechanical systems (MEMS) device.

4. The microelectronic assembly of claim 1 , wherein the continuous seal ring is disposed over the bond joint and extends around an exterior of at least one of the first microelectronic component and the second microelectronic component.

5. A microelectronic assembly, comprising:

a first microelectronic component bonded at a first insulating surface to a second insulating surface of a second microelectronic component, the first insulating surface having a first conductive feature and the second insulating surface having a second conductive feature, the first insulating surface and the second insulating surface forming a bond joint where the first insulating surface and the second insulating surface make contact and the bond joint includes a dielectric-to-dielectric bond and a metal-to-metal bond; and

a continuous seal ring disposed over the bond joint, the continuous seal ring being annularly continuous around a periphery of the bond joint thereby sealing the bond joint between the first microelectronic component and the second microelectronic component.

6. The microelectronic assembly of claim 5 , further comprising a third microelectronic component coupled to the second microelectronic component such that the second microelectronic component is positioned between the first microelectronic component and the third microelectronic component.

7. The microelectronic assembly of claim 6 , wherein the third microelectronic component comprises a logic device.

8. The microelectronic assembly of claim 7 , wherein the first microelectronic component comprises a cavity die and the second microelectronic component comprises a microelectromechanical systems (MEMS) die.

9. The microelectronic assembly of claim 5 , wherein the continuous seal ring comprises a polymer seal layer and a metallic seal layer.

10. The microelectronic assembly of claim 5 , wherein the continuous seal ring comprises a sinterable conductive paste or a fritted glass composite.

11. A microelectronic assembly, comprising:

a first microelectronic component having a first insulating surface with a first conductive feature;

a second microelectronic component having a second insulating surface with a second conductive feature, the first insulating surface is directly bonded to the second insulating surface without an adhesive thereby forming a bond joint between the first and second insulating surfaces that includes a dielectric-to-dielectric bond and a metal-to-metal bond; and

a seal extending around a periphery of and at least to the bond joint, the seal sealing the bond joint between the first microelectronic component and the second microelectronic component.

12. The microelectronic assembly of claim 11 , wherein the seal comprises a metallic material.

13. The microelectronic assembly of claim 12 , wherein the seal comprises a hermetic seal arranged to prevent fluid leakage at the bond joint greater than 1×10 −6 atm-cm3 per second.

14. The microelectronic assembly of claim 11 , further comprising a third microelectronic component coupled to the second microelectronic component such that the second microelectronic component is positioned between the first microelectronic component and the third microelectronic component.

Assignments (3)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 23, 2024
From: KATKAR, RAJESH; WANG, LIANG; UZOH, CYPRIAN EMEKA; HUANG, SHAOWU; GAO, GUILIAN; MOHAMMED, ILYAS
To: INVENSAS BONDING TECHNOLOGIES, INC.
Reel/Frame 066544/0219 →
CHANGE OF NAME Recorded Feb 23, 2024
From: INVENSAS BONDING TECHNOLOGIES, INC.
To: ADEIA SEMICONDUCTOR BONDING TECHNOLOGIES INC.
Reel/Frame 066665/0814 →
SECURITY INTEREST Recorded May 3, 2023
From: ADEIA GUIDES INC.; ADEIA IMAGING LLC; ADEIA MEDIA HOLDINGS LLC; ADEIA MEDIA SOLUTIONS INC.; ADEIA SEMICONDUCTOR ADVANCED TECHNOLOGIES INC.; ADEIA SEMICONDUCTOR BONDING TECHNOLOGIES INC.; ADEIA SEMICONDUCTOR INC.; ADEIA SEMICONDUCTOR SOLUTIONS LLC; ADEIA SEMICONDUCTOR TECHNOLOGIES LLC; ADEIA SOLUTIONS LLC
To: BANK OF AMERICA, N.A., AS COLLATERAL AGENT
Reel/Frame 063529/0272 →
Continuity (4)
Continuation 16678058 · Nov 8, 2019
Division 15920759 · Mar 14, 2018
Provisional Application 62474478 · Mar 21, 2017
Related Publication 20220415734A1 · Dec 29, 2022
References Cited (400)
US 4998665A · Hayashi · 1991 [cited by applicant]
US 5087585A · Hayashi · 1992 [cited by applicant]
US 5322593A · Hasegawa et al. · 1994 [cited by applicant]
US 5753536A · Sugiyama et al. · 1998 [cited by applicant]
US 5771555A · Eda et al. · 1998 [cited by applicant]
US 5985739A · Plettner et al. · 1999 [cited by applicant]
US 5998808A · Matsushita · 1999 [cited by applicant]
US 6008126A · Leedy · 1999 [cited by applicant]
US 6080640A · Gardner et al. · 2000 [cited by applicant]
US 6265775B1 · Seyyedy · 2001 [cited by applicant]
US 6374770B1 · Lee · 2002 [cited by applicant]
US 6423640B1 · Lee et al. · 2002 [cited by applicant]
US 6465892B1 · Suga · 2002 [cited by applicant]
US 6872984B1 · Leung · 2005 [cited by applicant]
US 6876062B2 · Lee et al. · 2005 [cited by applicant]
US 6887769B2 · Kellar et al. · 2005 [cited by applicant]
US 6908027B2 · Tolchinsky et al. · 2005 [cited by applicant]
US 6998712B2 · Okada et al. · 2006 [cited by applicant]
US 7045453B2 · Canaperi et al. · 2006 [cited by applicant]
US 7057274B2 · Heschel · 2006 [cited by applicant]
US 7078811B2 · Suga · 2006 [cited by applicant]
US 7105980B2 · Abbott et al. · 2006 [cited by applicant]
US 7193423B1 · Dalton et al. · 2007 [cited by applicant]
US 7354798B2 · Pogge et al. · 2008 [cited by applicant]
US 7359591B2 · Vandentop et al. · 2008 [cited by applicant]
US 7388281B2 · Krueger · 2008 [cited by examiner]
US 7467897B2 · Hauffe et al. · 2008 [cited by applicant]
US 7622324B2 · Enquist et al. · 2009 [cited by applicant]
US 7750488B2 · Patti et al. · 2010 [cited by applicant]
US 7768133B2 · Matsui et al. · 2010 [cited by applicant]
US 7803693B2 · Trezza · 2010 [cited by applicant]
US 7972683B2 · Gudeman et al. · 2011 [cited by applicant]
US 8183127B2 · Patti et al. · 2012 [cited by applicant]
US 8191756B2 · Coppeta et al. · 2012 [cited by applicant]
US 8241961B2 · Kim et al. · 2012 [cited by applicant]
US 8269671B2 · Chen et al. · 2012 [cited by applicant]
US 8314007B2 · Vaufredaz · 2012 [cited by applicant]
US 8349635B1 · Gan et al. · 2013 [cited by applicant]
US 8357931B2 · Schieck et al. · 2013 [cited by applicant]
US 8377798B2 · Peng et al. · 2013 [cited by applicant]
US 8395229B2 · Garcia-Blanco et al. · 2013 [cited by applicant]
US 8411444B2 · Gaynes et al. · 2013 [cited by applicant]
US 8441131B2 · Ryan · 2013 [cited by applicant]
US 8476146B2 · Chen et al. · 2013 [cited by applicant]
US 8476165B2 · Trickett et al. · 2013 [cited by applicant]
US 8482132B2 · Yang et al. · 2013 [cited by applicant]
US 8501537B2 · Sadaka et al. · 2013 [cited by applicant]
US 8524533B2 · Tong et al. · 2013 [cited by applicant]
US 8530997B1 · Yang et al. · 2013 [cited by applicant]
US 8546928B2 · Merz et al. · 2013 [cited by applicant]
US 8575748B1 · Farino · 2013 [cited by applicant]
US 8620164B2 · Heck et al. · 2013 [cited by applicant]
US 8647987B2 · Yang et al. · 2014 [cited by applicant]
US 8669602B2 · Hayashi · 2014 [cited by applicant]
US 8697493B2 · Sadaka · 2014 [cited by applicant]
US 8716105B2 · Sadaka et al. · 2014 [cited by applicant]
US 8802538B1 · Liu · 2014 [cited by applicant]
US 8809123B2 · Liu et al. · 2014 [cited by applicant]
US 8841002B2 · Tong · 2014 [cited by applicant]
US 8916448B2 · Cheng et al. · 2014 [cited by applicant]
US 8988299B2 · Kam et al. · 2015 [cited by applicant]
US 9093350B2 · Endo et al. · 2015 [cited by applicant]
US 9119313B2 · Zhang et al. · 2015 [cited by applicant]
US 9142517B2 · Liu et al. · 2015 [cited by applicant]
US 9142532B2 · Suga et al. · 2015 [cited by applicant]
US 9171756B2 · Enquist et al. · 2015 [cited by applicant]
US 9184125B2 · Enquist et al. · 2015 [cited by applicant]
US 9224704B2 · Landru · 2015 [cited by applicant]
US 9230941B2 · Chen et al. · 2016 [cited by applicant]
US 9257399B2 · Kuang et al. · 2016 [cited by applicant]
US 9299736B2 · Chen et al. · 2016 [cited by applicant]
US 9312229B2 · Chen et al. · 2016 [cited by applicant]
US 9318471B2 · Kabe et al. · 2016 [cited by applicant]
US 9337235B2 · Chen et al. · 2016 [cited by applicant]
US 9368866B2 · Yu · 2016 [cited by applicant]
US 9385024B2 · Tong et al. · 2016 [cited by applicant]
US 9386688B2 · MacDonald et al. · 2016 [cited by applicant]
US 9391143B2 · Tong et al. · 2016 [cited by applicant]
US 9394161B2 · Cheng et al. · 2016 [cited by applicant]
US 9431368B2 · Enquist et al. · 2016 [cited by applicant]
US 9437572B2 · Chen et al. · 2016 [cited by applicant]
US 9443796B2 · Chou et al. · 2016 [cited by applicant]
US 9461007B2 · Chun et al. · 2016 [cited by applicant]
US 9496239B1 · Edelstein et al. · 2016 [cited by applicant]
US 9536848B2 · England et al. · 2017 [cited by applicant]
US 9559081B1 · Lai et al. · 2017 [cited by applicant]
US 9601454B2 · Zhao et al. · 2017 [cited by applicant]
US 9620464B2 · Baks et al. · 2017 [cited by applicant]
US 9620481B2 · Edelstein et al. · 2017 [cited by applicant]
US 9656852B2 · Cheng et al. · 2017 [cited by applicant]
US 9723716B2 · Meinhold · 2017 [cited by applicant]
US 9728521B2 · Tsai et al. · 2017 [cited by applicant]
US 9741620B2 · Uzoh et al. · 2017 [cited by applicant]
US 9768307B2 · Yamazaki et al. · 2017 [cited by applicant]
US 9799587B2 · Fujii et al. · 2017 [cited by applicant]
US 9834435B1 · Liu et al. · 2017 [cited by applicant]
US 9852988B2 · Enquist et al. · 2017 [cited by applicant]
US 9881882B2 · Hsu et al. · 2018 [cited by applicant]
US 9893004B2 · Yazdani · 2018 [cited by applicant]
US 9899442B2 · Katkar · 2018 [cited by applicant]
US 9929050B2 · Lin · 2018 [cited by applicant]
US 9941241B2 · Edelstein et al. · 2018 [cited by applicant]
US 9941243B2 · Kim et al. · 2018 [cited by applicant]
US 9953941B2 · Enquist · 2018 [cited by applicant]
US 9960142B2 · Chen et al. · 2018 [cited by applicant]
US 10002844B1 · Wang · 2018 [cited by examiner]
US 10026605B2 · Doub et al. · 2018 [cited by applicant]
US 10075657B2 · Fahim et al. · 2018 [cited by applicant]
US 10204893B2 · Uzoh et al. · 2019 [cited by applicant]
US 10269756B2 · Uzoh · 2019 [cited by applicant]
US 10276619B2 · Kao et al. · 2019 [cited by applicant]
US 10276909B2 · Huang et al. · 2019 [cited by applicant]
US 10418277B2 · Cheng et al. · 2019 [cited by applicant]
US 10446456B2 · Shen et al. · 2019 [cited by applicant]
US 10446487B2 · Huang et al. · 2019 [cited by applicant]
US 10446532B2 · Uzoh et al. · 2019 [cited by applicant]
US 10508030B2 · Katkar et al. · 2019 [cited by applicant]
US 10522499B2 · Enquist et al. · 2019 [cited by applicant]
US 10546832B2 · Wang et al. · 2020 [cited by applicant]
US 10615133B2 · Kamgaing et al. · 2020 [cited by applicant]
US 10658312B2 · Kamgaing et al. · 2020 [cited by applicant]
US 10707087B2 · Uzoh et al. · 2020 [cited by applicant]
US 10727219B2 · Uzoh et al. · 2020 [cited by applicant]
US 10784191B2 · Huang et al. · 2020 [cited by applicant]
US 10790262B2 · Uzoh et al. · 2020 [cited by applicant]
US 10840135B2 · Uzoh · 2020 [cited by applicant]
US 10840205B2 · Fountain, Jr. et al. · 2020 [cited by applicant]
US 10854578B2 · Morein · 2020 [cited by applicant]
US 10879207B2 · Wang et al. · 2020 [cited by applicant]
US 10879210B2 · Enquist · 2020 [cited by examiner]
US 10879212B2 · Uzoh et al. · 2020 [cited by applicant]
US 10886177B2 · DeLaCruz et al. · 2021 [cited by applicant]
US 10892246B2 · Uzoh · 2021 [cited by applicant]
US 10923408B2 · Huang et al. · 2021 [cited by applicant]
US 10923413B2 · DeLaCruz · 2021 [cited by applicant]
US 10950547B2 · Mohammed et al. · 2021 [cited by applicant]
US 10964664B2 · Mandalapu et al. · 2021 [cited by applicant]
US 10985133B2 · Uzoh · 2021 [cited by applicant]
US 10991804B2 · DeLaCruz et al. · 2021 [cited by applicant]
US 10998292B2 · Lee et al. · 2021 [cited by applicant]
US 11004757B2 · Katkar et al. · 2021 [cited by applicant]
US 11011503B2 · Wang et al. · 2021 [cited by applicant]
US 11031285B2 · Katkar et al. · 2021 [cited by applicant]
US 11056348B2 · Theil · 2021 [cited by applicant]
US 11088099B2 · Katkar et al. · 2021 [cited by applicant]
US 11127738B2 · DeLaCruz et al. · 2021 [cited by applicant]
US 11158606B2 · Gao et al. · 2021 [cited by applicant]
US 11171117B2 · Gao et al. · 2021 [cited by applicant]
US 11176450B2 · Teig et al. · 2021 [cited by applicant]
US 11205600B2 · Shen et al. · 2021 [cited by applicant]
US 11256004B2 · Haba et al. · 2022 [cited by applicant]
US 11257727B2 · Katkar et al. · 2022 [cited by applicant]
US 11264357B1 · DeLaCruz et al. · 2022 [cited by applicant]
US 11276676B2 · Enquist et al. · 2022 [cited by applicant]
US 11329034B2 · Tao et al. · 2022 [cited by applicant]
US 11348898B2 · DeLaCruz et al. · 2022 [cited by applicant]
US 11355443B2 · Huang et al. · 2022 [cited by applicant]
US 11380597B2 · Katkar et al. · 2022 [cited by applicant]
US 11417576B2 · Katkar et al. · 2022 [cited by applicant]
US 11485670B2 · Ruben et al. · 2022 [cited by applicant]
US 11600542B2 · Huang et al. · 2023 [cited by applicant]
US 11670615B2 · Wang et al. · 2023 [cited by applicant]
US 11948847B2 · Katkar et al. · 2024 [cited by applicant]
US 11955393B2 · Katkar et al. · 2024 [cited by applicant]
US 12100684B2 · Wang et al. · 2024 [cited by applicant]
US 20020000328A1 · Motomura et al. · 2002 [cited by applicant]
US 20020003307A1 · Suga · 2002 [cited by applicant]
US 20020094608A1 · Brooks · 2002 [cited by applicant]
US 20020179921A1 · Cohn · 2002 [cited by applicant]
US 20030098060A1 · Yoshimi · 2003 [cited by applicant]
US 20040084414A1 · Sakai et al. · 2004 [cited by applicant]
US 20040259325A1 · Gan · 2004 [cited by applicant]
US 20050009246A1 · Enquist et al. · 2005 [cited by applicant]
US 20050082653A1 · McWilliams et al. · 2005 [cited by applicant]
US 20050263866A1 · Wan · 2005 [cited by applicant]
US 20060001123A1 · Heck et al. · 2006 [cited by applicant]
US 20060057945A1 · Hsu et al. · 2006 [cited by applicant]
US 20060097335A1 · Kim et al. · 2006 [cited by applicant]
US 20060115323A1 · Coppeta et al. · 2006 [cited by applicant]
US 20060197215A1 · Potter · 2006 [cited by applicant]
US 20060208326A1 · Nasiri et al. · 2006 [cited by applicant]
US 20070029562A1 · Koizumi · 2007 [cited by examiner]
US 20070045781A1 · Carlson et al. · 2007 [cited by applicant]
US 20070045795A1 · McBean · 2007 [cited by applicant]
US 20070096294A1 · Ikeda et al. · 2007 [cited by applicant]
US 20070111386A1 · Kim et al. · 2007 [cited by applicant]
US 20070134891A1 · Adetutu et al. · 2007 [cited by applicant]
US 20070188054A1 · Hasken et al. · 2007 [cited by applicant]
US 20070222048A1 · Huang · 2007 [cited by applicant]
US 20070295456A1 · Gudeman · 2007 [cited by examiner]
US 20080080832A1 · Chen et al. · 2008 [cited by applicant]
US 20080124835A1 · Chen et al. · 2008 [cited by applicant]
US 20080261344A1 · Jafri et al. · 2008 [cited by applicant]
US 20080283995A1 · Bucki et al. · 2008 [cited by applicant]
US 20080290490A1 · Fujii et al. · 2008 [cited by applicant]
US 20080296709A1 · Haba et al. · 2008 [cited by applicant]
US 20090053855A1 · Summers · 2009 [cited by applicant]
US 20090186446A1 · Kwon et al. · 2009 [cited by applicant]
US 20090267165A1 · Okudo et al. · 2009 [cited by applicant]
US 20100078786A1 · Maeda · 2010 [cited by applicant]
US 20100096713A1 · Jung · 2010 [cited by applicant]
US 20100148341A1 · Fuji et al. · 2010 [cited by applicant]
US 20100181676A1 · Montez et al. · 2010 [cited by applicant]
US 20100288525A1 · Basavanhally et al. · 2010 [cited by applicant]
US 20100301432A1 · Kittilsland et al. · 2010 [cited by applicant]
US 20110031633A1 · Hsu et al. · 2011 [cited by applicant]
US 20110115092A1 · Tago · 2011 [cited by applicant]
US 20110147859A1 · Tanaka et al. · 2011 [cited by applicant]
US 20110156242A1 · Sakaguchi et al. · 2011 [cited by applicant]
US 20110180921A1 · Loiselet · 2011 [cited by examiner]
US 20110290552A1 · Palmateer et al. · 2011 [cited by applicant]
US 20120061776A1 · Cheng et al. · 2012 [cited by applicant]
US 20120097733A1 · Ebefors et al. · 2012 [cited by applicant]
US 20120100657A1 · Di Cioccio et al. · 2012 [cited by applicant]
US 20120112335A1 · Ebefors et al. · 2012 [cited by applicant]
US 20120142144A1 · Taheri · 2012 [cited by applicant]
US 20120212384A1 · Kam et al. · 2012 [cited by applicant]
US 20120267730A1 · Renard et al. · 2012 [cited by applicant]
US 20120286380A1 · Yazdi et al. · 2012 [cited by applicant]
US 20120326248A1 · Daneman et al. · 2012 [cited by applicant]
US 20130099331A1 · Chen · 2013 [cited by examiner]
US 20130122702A1 · Volant et al. · 2013 [cited by applicant]
US 20130187245A1 · Chien et al. · 2013 [cited by applicant]
US 20130271066A1 · Signorelli et al. · 2013 [cited by applicant]
US 20130277774A1 · Frey et al. · 2013 [cited by applicant]
US 20130277777A1 · Chang et al. · 2013 [cited by applicant]
US 20130293428A1 · Souriau et al. · 2013 [cited by applicant]
US 20140042593A1 · Mauder et al. · 2014 [cited by applicant]
US 20140175655A1 · Chen et al. · 2014 [cited by applicant]
US 20140197534A1 · Partosa et al. · 2014 [cited by applicant]
US 20140217557A1 · Chen et al. · 2014 [cited by applicant]
US 20140225206A1 · Lin et al. · 2014 [cited by applicant]
US 20140225795A1 · Yu · 2014 [cited by applicant]
US 20140264653A1 · Cheng et al. · 2014 [cited by applicant]
US 20140361413A1 · Chapelon · 2014 [cited by applicant]
US 20150001632A1 · Liu et al. · 2015 [cited by applicant]
US 20150064498A1 · Tong · 2015 [cited by applicant]
US 20150068666A1 · Abe et al. · 2015 [cited by applicant]
US 20150091153A1 · Liu et al. · 2015 [cited by applicant]
US 20150097215A1 · Chu et al. · 2015 [cited by applicant]
US 20150137345A1 · Choi et al. · 2015 [cited by applicant]
US 20150298965A1 · Tsai et al. · 2015 [cited by applicant]
US 20150336790A1 · Geen et al. · 2015 [cited by applicant]
US 20150336792A1 · Huang et al. · 2015 [cited by applicant]
US 20160002029A1 · Nasiri et al. · 2016 [cited by applicant]
US 20160016789A1 · Yu et al. · 2016 [cited by applicant]
US 20160107881A1 · Thompson et al. · 2016 [cited by applicant]
US 20160137492A1 · Cheng et al. · 2016 [cited by applicant]
US 20160146851A1 · Kamisuki · 2016 [cited by applicant]
US 20160229685A1 · Boysel · 2016 [cited by applicant]
US 20160240495A1 · Lachner et al. · 2016 [cited by applicant]
US 20160318757A1 · Chou · 2016 [cited by examiner]
US 20160343682A1 · Kawasaki · 2016 [cited by applicant]
US 20170001858A1 · Adams et al. · 2017 [cited by applicant]
US 20170008757A1 · Cheng et al. · 2017 [cited by applicant]
US 20170062366A1 · Enquist · 2017 [cited by applicant]
US 20170081181A1 · Zhang et al. · 2017 [cited by applicant]
US 20170135240A1 · Pahl · 2017 [cited by applicant]
US 20170137281A1 · Favier et al. · 2017 [cited by applicant]
US 20170179029A1 · Enquist et al. · 2017 [cited by applicant]
US 20170186732A1 · Chu et al. · 2017 [cited by applicant]
US 20170194271A1 · Hsu et al. · 2017 [cited by applicant]
US 20170200711A1 · Uzoh et al. · 2017 [cited by applicant]
US 20170305738A1 · Chang et al. · 2017 [cited by applicant]
US 20170338214A1 · Uzoh et al. · 2017 [cited by applicant]
US 20180044175A1 · Ogashiwa et al. · 2018 [cited by applicant]
US 20180047682A1 · Chang et al. · 2018 [cited by applicant]
US 20180096931A1 · Huang et al. · 2018 [cited by applicant]
US 20180174995A1 · Wang et al. · 2018 [cited by applicant]
US 20180175012A1 · Wu et al. · 2018 [cited by applicant]
US 20180182639A1 · Uzoh et al. · 2018 [cited by applicant]
US 20180182666A1 · Uzoh et al. · 2018 [cited by applicant]
US 20180190580A1 · Haba et al. · 2018 [cited by applicant]
US 20180190583A1 · DeLaCruz et al. · 2018 [cited by applicant]
US 20180191047A1 · Huang et al. · 2018 [cited by applicant]
US 20180219038A1 · Gambino et al. · 2018 [cited by applicant]
US 20180226375A1 · Enquist et al. · 2018 [cited by applicant]
US 20180269161A1 · Wu et al. · 2018 [cited by applicant]
US 20180273377A1 · Katkar et al. · 2018 [cited by applicant]
US 20180286805A1 · Huang et al. · 2018 [cited by applicant]
US 20180323177A1 · Yu et al. · 2018 [cited by applicant]
US 20180323227A1 · Zhang et al. · 2018 [cited by applicant]
US 20180331066A1 · Uzoh et al. · 2018 [cited by applicant]
US 20180337157A1 · Wang et al. · 2018 [cited by applicant]
US 20190051628A1 · Liu et al. · 2019 [cited by applicant]
US 20190096741A1 · Uzoh et al. · 2019 [cited by applicant]
US 20190096842A1 · Fountain, Jr. et al. · 2019 [cited by applicant]
US 20190115277A1 · Yu et al. · 2019 [cited by applicant]
US 20190131277A1 · Yang et al. · 2019 [cited by applicant]
US 20190164914A1 · Hu et al. · 2019 [cited by applicant]
US 20190198407A1 · Huang et al. · 2019 [cited by applicant]
US 20190265411A1 · Huang et al. · 2019 [cited by applicant]
US 20190333550A1 · Fisch · 2019 [cited by applicant]
US 20190348336A1 · Katkar et al. · 2019 [cited by applicant]
US 20190363079A1 · Thei et al. · 2019 [cited by applicant]
US 20190385935A1 · Gao et al. · 2019 [cited by applicant]
US 20190385966A1 · Gao et al. · 2019 [cited by applicant]
US 20200013637A1 · Haba · 2020 [cited by applicant]
US 20200013765A1 · Fountain, Jr. et al. · 2020 [cited by applicant]
US 20200035641A1 · Fountain, Jr. et al. · 2020 [cited by applicant]
US 20200043817A1 · Shen et al. · 2020 [cited by applicant]
US 20200075520A1 · Gao et al. · 2020 [cited by applicant]
US 20200075534A1 · Gao et al. · 2020 [cited by applicant]
US 20200075553A1 · DeLaCruz et al. · 2020 [cited by applicant]
US 20200118973A1 · Wang et al. · 2020 [cited by applicant]
US 20200126906A1 · Uzoh et al. · 2020 [cited by applicant]
US 20200131028A1 · Cheng et al. · 2020 [cited by applicant]
US 20200140267A1 · Katkar et al. · 2020 [cited by applicant]
US 20200140268A1 · Katkar et al. · 2020 [cited by applicant]
US 20200144217A1 · Enquist et al. · 2020 [cited by applicant]
US 20200194396A1 · Uzoh · 2020 [cited by applicant]
US 20200227367A1 · Haba et al. · 2020 [cited by applicant]
US 20200243380A1 · Uzoh et al. · 2020 [cited by applicant]
US 20200279821A1 · Haba et al. · 2020 [cited by applicant]
US 20200294908A1 · Haba et al. · 2020 [cited by applicant]
US 20200328162A1 · Haba et al. · 2020 [cited by applicant]
US 20200328164A1 · DeLaCruz et al. · 2020 [cited by applicant]
US 20200328165A1 · DeLaCruz et al. · 2020 [cited by applicant]
US 20200335408A1 · Gao et al. · 2020 [cited by applicant]
US 20200371154A1 · DeLaCruz et al. · 2020 [cited by applicant]
US 20200395321A1 · Katkar et al. · 2020 [cited by applicant]
US 20200411483A1 · Uzoh et al. · 2020 [cited by applicant]
US 20210098412A1 · Haba et al. · 2021 [cited by applicant]
US 20210118864A1 · DeLaCruz et al. · 2021 [cited by applicant]
US 20210134689A1 · Huang et al. · 2021 [cited by applicant]
US 20210143125A1 · DeLaCruz et al. · 2021 [cited by applicant]
US 20210181510A1 · Katkar et al. · 2021 [cited by applicant]
US 20210193603A1 · Katkar et al. · 2021 [cited by applicant]
US 20210193624A1 · DeLaCruz et al. · 2021 [cited by applicant]
US 20210193625A1 · DeLaCruz et al. · 2021 [cited by applicant]
US 20210202428A1 · Wang et al. · 2021 [cited by applicant]
US 20210242152A1 · Fountain, Jr. et al. · 2021 [cited by applicant]
US 20210265227A1 · Katkar et al. · 2021 [cited by applicant]
US 20210296282A1 · Gao et al. · 2021 [cited by applicant]
US 20210305202A1 · Uzoh et al. · 2021 [cited by applicant]
US 20210366820A1 · Uzoh · 2021 [cited by applicant]
US 20210407941A1 · Haba · 2021 [cited by applicant]
US 20220077063A1 · Haba · 2022 [cited by applicant]
US 20220077087A1 · Haba · 2022 [cited by applicant]
US 20220139867A1 · Uzoh · 2022 [cited by applicant]
US 20220139869A1 · Gao et al. · 2022 [cited by applicant]
US 20220208650A1 · Gao et al. · 2022 [cited by applicant]
US 20220208702A1 · Uzoh · 2022 [cited by applicant]
US 20220208723A1 · Katkar et al. · 2022 [cited by applicant]
US 20220246497A1 · Fountain, Jr. et al. · 2022 [cited by applicant]
US 20220285303A1 · Mirkarimi et al. · 2022 [cited by applicant]
US 20220319901A1 · Suwito et al. · 2022 [cited by applicant]
US 20220320035A1 · Uzoh et al. · 2022 [cited by applicant]
US 20220320036A1 · Gao et al. · 2022 [cited by applicant]
US 20220367302A1 · Katkar et al. · 2022 [cited by applicant]
US 20230005850A1 · Fountain, Jr. · 2023 [cited by applicant]
US 20230019869A1 · Mirkarimi et al. · 2023 [cited by applicant]
US 20230036441A1 · Haba et al. · 2023 [cited by applicant]
US 20230067677A1 · Lee et al. · 2023 [cited by applicant]
US 20230069183A1 · Haba · 2023 [cited by applicant]
US 20230100032A1 · Haba et al. · 2023 [cited by applicant]
US 20230115122A1 · Uzoh et al. · 2023 [cited by applicant]
US 20230122531A1 · Uzoh · 2023 [cited by applicant]
US 20230123423A1 · Gao et al. · 2023 [cited by applicant]
US 20230125395A1 · Gao et al. · 2023 [cited by applicant]
US 20230130259A1 · Haba et al. · 2023 [cited by applicant]
US 20230132632A1 · Katkar et al. · 2023 [cited by applicant]
US 20230140107A1 · Uzoh et al. · 2023 [cited by applicant]
US 20230142680A1 · Guevara et al. · 2023 [cited by applicant]
US 20230154816A1 · Haba et al. · 2023 [cited by applicant]
US 20230154828A1 · Haba et al. · 2023 [cited by applicant]
US 20230187264A1 · Uzoh et al. · 2023 [cited by applicant]
US 20230187317A1 · Uzoh · 2023 [cited by applicant]
US 20230187412A1 · Gao et al. · 2023 [cited by applicant]
US 20230197453A1 · Fountain, Jr. et al. · 2023 [cited by applicant]
US 20230197496A1 · Theil · 2023 [cited by applicant]
US 20230197559A1 · Haba et al. · 2023 [cited by applicant]
US 20230197560A1 · Katkar et al. · 2023 [cited by applicant]
US 20230197655A1 · Theil et al. · 2023 [cited by applicant]
US 20230207402A1 · Fountain, Jr. et al. · 2023 [cited by applicant]
US 20230207437A1 · Haba · 2023 [cited by applicant]
US 20230207474A1 · Uzoh et al. · 2023 [cited by applicant]
US 20230207514A1 · Gao et al. · 2023 [cited by applicant]
US 20230215836A1 · Haba et al. · 2023 [cited by applicant]
US 20230245950A1 · Haba et al. · 2023 [cited by applicant]
US 20230260858A1 · Huang et al. · 2023 [cited by applicant]
US 20230268300A1 · Uzoh et al. · 2023 [cited by applicant]
US 20230299029A1 · Theil et al. · 2023 [cited by applicant]
US 20230343734A1 · Uzoh et al. · 2023 [cited by applicant]
US 20230360950A1 · Gao · 2023 [cited by applicant]
US 20230361072A1 · Wang et al. · 2023 [cited by applicant]
US 20230361074A1 · Uzoh et al. · 2023 [cited by applicant]
US 20230369136A1 · Uzoh et al. · 2023 [cited by applicant]
US 20230375613A1 · Haba et al. · 2023 [cited by applicant]
US 20230420313A1 · Katkar et al. · 2023 [cited by applicant]
US 20240038702A1 · Uzoh · 2024 [cited by applicant]
US 20240055407A1 · Workman et al. · 2024 [cited by applicant]
US 20240079376A1 · Suwito et al. · 2024 [cited by applicant]
US 20240105674A1 · Uzoh et al. · 2024 [cited by applicant]
US 20240120245A1 · Katkar et al. · 2024 [cited by applicant]
US 20240162102A1 · Katkar et al. · 2024 [cited by applicant]
US 20240170411A1 · Chang et al. · 2024 [cited by applicant]
US 20240186248A1 · Haba et al. · 2024 [cited by applicant]
US 20240186268A1 · Uzoh et al. · 2024 [cited by applicant]
US 20240186269A1 · Haba · 2024 [cited by applicant]
Cited By (2)
US 12,381,119 US 12,690,488