Methods of manufacturing multi-band surface acoustic wave filters
A method of manufacturing a packaged surface acoustic wave filter chip is disclosed. The method can include providing a structure having first interdigital transducer electrodes formed with a first piezoelectric layer, second interdigital transducer electrodes formed with a second piezoelectric layer, and a substrate between the first and second piezoelectric layers. The method can include forming a plurality of through electrodes extending at least partially through a thickness of the structure such that a first set of through electrodes of the plurality of through electrodes are electrically connected to the first interdigital transducer electrodes and a second set of through electrodes of the plurality of through electrodes are electrically isolated from the first interdigital transducer electrodes.
1. A method of manufacturing a surface acoustic wave filter, the method comprising:
providing a substrate;
disposing a first piezoelectric layer and a second piezoelectric layer on a first main surface of the substrate and a second main surface of the substrate opposing the first main surface, respectively;
forming a plurality of first surface acoustic wave resonators and a plurality of second surface acoustic wave resonators on a top surface of the first piezoelectric layer and a bottom surface of the second piezoelectric layer, respectively;
forming a first wiring layer and a second wiring layer on the top surface of the first piezoelectric layer and the bottom surface of the second piezoelectric layer, respectively, the first wiring layer connecting the plurality of first surface acoustic wave resonators to each other and the second wiring layer connecting the plurality of second surface acoustic wave resonators to each other;
forming a plurality of through electrodes extending through the substrate, the first piezoelectric layer, and the second piezoelectric layer, the plurality of through electrodes include a through electrode connected to the first wiring layer and/or the second wiring layer; and
forming respective cavities over the plurality of first surface acoustic wave resonators, the first wiring layer, and the plurality of through electrodes on the top surface of the first piezoelectric layer and over the plurality of second surface acoustic wave resonators, the second wiring layer, and the plurality of through electrodes on the bottom surface of the second piezoelectric layer, a circuit including the plurality of first surface acoustic wave resonators and the first wiring layer on the top surface of the first piezoelectric layer forming at least one first radio frequency filter, a circuit including the plurality of second surface acoustic wave resonators and the second wiring layer on the bottom surface of the second piezoelectric layer forming at least one second radio frequency filter, the at least one first radio frequency filter and the at least one second radio frequency filter belonging to different frequency bands.
2. The method of claim 1 further comprising forming respective dielectric layers on the first main surface and the second main surface of the substrate before disposing the first piezoelectric layer and the second piezoelectric layer on the first main surface and the second main surface, respectively, forming the plurality of through electrodes including forming the plurality of through electrodes to extend through the respective dielectric layers.
3. The method of claim 1 wherein forming the respective cavities includes:
forming a first cavity roof and a second cavity roof covering the respective cavities on the top surface of the first piezoelectric layer and the bottom surface of the second piezoelectric layer, respectively;
forming another second wiring layer formed on the bottom surfaces of the second piezoelectric layer and the second cavity roof to connect at least some of the plurality of through electrodes to each other;
forming a resin layer covering the other second wiring layer on the bottom surfaces of the second piezoelectric layer and the second cavity roof; and
forming a packaging terminal on a bottom surface of the resin layer to be connected to the other second wiring layer.
4. The method of claim 3 wherein forming the first cavity roof includes:
forming a first cavity frame on the top surface of the first piezoelectric layer, the first cavity frame having a certain height and extending along a periphery of the substrate to surround the plurality of first surface acoustic wave resonators, the first wiring layer, and the plurality of through electrodes; and
disposing the first cavity roof to be supported by the first cavity frame.
5. The method of claim 4 wherein forming the second cavity roof further includes:
forming a second cavity frame on the bottom surface of the second piezoelectric layer, the second cavity frame having a certain height and extending along a periphery of the substrate to surround the plurality of second surface acoustic wave resonators, the second wiring layer, and the plurality of through electrodes; and
disposing the second cavity roof to be supported by the second cavity frame.
6. The method of claim 5 further comprising forming another seed layer to be connected to at least some of the plurality of through electrodes on the bottom surface of the second piezoelectric layer to cover the second cavity roof, before forming the other second wiring layer, the other second wiring layer being formed on the other seed layer.
7. The method of claim 3 further comprising forming a column electrode to be connected to the other second wiring layer through the resin layer, before forming the resin layer, the packaging terminal being formed on an end face of the column electrode.
8. The method of claim 1 wherein forming the plurality of through electrodes include forming a number of through electrodes adjacently disposed together as a single unit.
9. The method of claim 1 further comprising forming second interdigital transducer electrodes associated with the second piezoelectric layer, and a second cavity frame over the second piezoelectric layer, the second cavity frame laterally surrounding the second interdigital transducer electrodes.
10. The method of claim 1 wherein the plurality of through electrodes include a through electrode electrically isolated from the first wiring layer and/or the second wiring layer.
11. A surface acoustic wave filter assembly comprising:
a first surface acoustic wave filter connected to a common node; and
a second surface acoustic wave filter connected to the common node, at least one of the first surface acoustic wave filter and the second surface acoustic wave filter includes a surface acoustic wave filter manufactured using the method of claim 1 .
12. A method of manufacturing a packaged surface acoustic wave filter chip, the method comprising:
providing a structure having first interdigital transducer electrodes formed with a first piezoelectric layer, second interdigital transducer electrodes formed with a second piezoelectric layer, and a substrate between the first and second piezoelectric layers;
forming a first cavity frame over the first piezoelectric layer, the first cavity frame laterally surrounding the first interdigital transducer electrodes;
forming a first roof over the first cavity frame to define a first cavity between the first piezoelectric layer and the first roof;
forming a second cavity frame over the second piezoelectric layer, the second cavity frame laterally surrounding the second interdigital transducer electrodes;
and forming a second roof over the second cavity frame to define a second cavity between the first piezoelectric layer and the second roof; and
forming a plurality of through electrodes extending at least partially through a thickness of the structure such that a first set of through electrodes of the plurality of through electrodes are electrically connected to the first interdigital transducer electrodes and a second set of through electrodes of the plurality of through electrodes are electrically isolated from the first interdigital transducer electrodes.
13. The method of claim 12 forming a plurality of first surface acoustic wave resonators and a plurality of second surface acoustic wave resonators on a top surface of the first piezoelectric layer and a bottom surface of the second piezoelectric layer.
14. The method of claim 13 wherein forming the first cavity frame forms the first cavity frame to extend along a periphery of the substrate to surround the plurality of first surface acoustic wave resonators.
15. The method of claim 14 wherein forming the second cavity frame over the second piezoelectric layer forms the second cavity frame to extend along a periphery of the substrate to surround the plurality of second surface acoustic wave resonators.
16. The method of claim 12 further comprising providing an encapsulation layer over the second roof.
17. The method of claim 16 further comprising forming a conductive via at least partially through the encapsulation layer.
18. The method of claim 17 further comprising forming a terminal over the conductive via, the terminal electrically connected to the first interdigital transducer electrodes at least partially through the first set of through electrodes and the conductive via.
19. The method of claim 12 wherein a thickness of the first piezoelectric layer is different from a thickness of the second piezoelectric layer.
20. The method of claim 12 wherein the first interdigital transducer electrodes define a first surface acoustic wave filter belonging to a first frequency band and the second interdigital transducer electrodes define a second surface acoustic wave filter belonging to a second frequency band.