Granted Patent B2

US 12,543,568 · App. 18/067,655 · Granted Feb 3, 2026

Inventors: Belgacem Haba (Saratoga, CA); Rajesh Katkar (Milpitas, CA); Patrick Variot (Los Gatos, CA); Hong Shen (Palo Alto, CA)

Assignee: Adeia Semiconductor Bonding Technologies Inc.

H01L23/38H01L23/3672H01L25/0655H01L25/0657

Abstract

Claims (17)

1 . A microelectronic device comprising:

a first integrated device die;

a thermoelectric element bonded to the first integrated device die; and

a heat sink disposed over at least the thermoelectric element,

wherein the thermoelectric element is configured to transfer heat from the first integrated device die to the heat sink, the thermoelectric element directly bonded to the first integrated device die without an adhesive, wherein an interface between the first integrated device die and the thermoelectric element comprises non-conductor to non-conductor direct bonds.

2 . The microelectronic device of claim 1 , wherein the first integrated device die comprises active circuitry.

3 . The microelectronic device of claim 2 , wherein the thermoelectric element is directly bonded to a backside of the first integrated device die.

4 . The microelectronic device of claim 1 , wherein the interface between the first integrated device die and the thermoelectric element further comprises conductor-to-conductor direct bonds.

5 . The microelectronic device of claim 1 , further comprising a carrier element disposed between the thermoelectric element and the heat sink.

6 . The microelectronic device of claim 1 , wherein the heat is transferred from the first integrated device die to the heat sink during operation of the thermoelectric element.

7 . The microelectronic device of claim 1 , wherein the thermoelectric element is attached to bondwires for connecting to an external electrical power source.

8 . The microelectronic device of claim 1 , wherein the thermoelectric element is electrically connected with the first integrated device die by way of metal contacts.

9 . The microelectronic device of claim 1 , wherein the thermoelectric element is electrically connected with through-substrate vias in the first integrated device die.

10 . The microelectronic device of claim 1 , wherein the thermoelectric element is configured for zoned control of cooling the first integrated device die.

11 . The microelectronic device of claim 10 , further comprising a plurality of temperature sensors disposed in the first integrated device die or the thermoelectric element, wherein each temperature sensor is associated with two electrical contacts for actuating a portion of the thermoelectric element.

12 . The microelectronic device of claim 10 , further comprising a plurality of electrical contact pairs, each electrical contact pair independently controlling a portion of the thermoelectric element.

13 . The microelectronic device of claim 10 , wherein the thermoelectric element is actuated by the first integrated device die, the thermoelectric element, or an external chip.

Assignments (2)

Continuity (2)

References Cited (317)