Method of making a three-dimensional memory device using composite hard masks for formation of deep via openings
A method includes forming an alternating stack of first material layers and second material layers, forming an etch mask material layer containing an opening over the alternating stack, forming a non-conformal cladding liner over the etch mask material layer, where the non-conformal cladding liner includes a horizontally extending portion that overlies a horizontal top surface of the etch mask material layer and a vertically extending portion contacting a sidewall of the opening in the etch mask material layer, implanting ions of dopant atoms into the non-conformal cladding line, and performing an second anisotropic etch process that etches an unmasked portion of the alternating stack selective to the etch mask material layer and the non-conformal cladding liner. The non-conformal cladding liner provides a higher etch resistance relative to the unmasked portion of the alternating stack after the step of implanting ions than before the step of implanting ions.
1 . A method of forming a structure, comprising:
forming an alternating stack of first material layers and second material layers over a substrate;
forming an etch mask material layer containing an opening over the alternating stack;
performing a first anisotropic etch process that etches unmasked upper portions of the alternating stack to form a via opening below the opening in the etch mask material layer;
forming a non-conformal cladding liner over the etch mask material layer, wherein the non-conformal cladding liner comprises a horizontally extending portion that overlies a horizontal top surface of the etch mask material layer and a vertically extending portion contacting a sidewall of the opening in the etch mask material layer;
implanting ions of dopant atoms into the non-conformal cladding liner; and
vertically extending the via opening by performing a second anisotropic etch process that etches unmasked lower portions of the alternating stack selective to the etch mask material layer and the non-conformal cladding liner, wherein the non-conformal cladding liner provides a higher etch resistance relative to the lower portions of the alternating stack after the step of implanting ions than before the step of implanting ions.
2 . The method of claim 1 , wherein:
the step of implanting ions further implants the ions of the dopant atoms into an upper portion of the etch mask material layer through the non-conformal cladding liner, wherein the etch mask material layer comprises a vertical stack of an unimplanted etch mask material sublayer and an implanted etch mask material sublayer; and
the implanted etch mask material sublayer provides a higher etch resistance relative to the lower portions of the alternating stack than the unimplanted etch mask material sublayer.
3 . The method of claim 2 , wherein the non-conformal cladding liner has a higher etch resistance than the unimplanted etch mask material sublayer during the second anisotropic etch process.
4 . The method of claim 3 , wherein:
a combination of the non-conformal cladding liner and the etch mask material layer develops a contoured top surface profile during the second anisotropic etch process such that the combination has a thickness that decreases with a lateral distance from a periphery of the opening after a top surface of the unimplanted etch mask material sublayer is physically exposed during the second anisotropic etch process;
a top surface of the vertically extending portion of the non-conformal cladding liner protrudes above a remaining portion of the unimplanted etch mask material sublayer after the second anisotropic etch process.
5 . The method of claim 2 , wherein the implanted etch mask material sublayer has a region having a thickness in a range from 1% to 20% of a thickness of the etch mask material layer as measured after the first anisotropic etch process and prior to formation of the non-conformal cladding liner.
6 . The method of claim 5 , wherein the implanted etch mask material sublayer comprises:
a first portion that is laterally spaced from the via opening and has a uniform vertical thickness throughout; and
a second portion located around the opening in the etch mask material layer and extending downward from the first portion with a variable lateral extent that decreases with a vertical distance downward from a horizontal plane including a bottom surface of the first portion.
7 . The method of claim 2 , wherein the implanted etch mask material sublayer has a region having a thickness in a range from 20% to 50% of a thickness of the etch mask material layer as measured after the first anisotropic etch process and prior to formation of the non-conformal cladding liner.
8 . The method of claim 1 , wherein the dopant atoms comprise carbon, nitrogen, oxygen, boron, phosphorus, arsenic, hydrogen, noble gas or transition metal atoms.
9 . The method of claim 1 , wherein the step of implanting ions comprises a tilted ion implantation process.
10 . The method of claim 1 , wherein the step of implanting ions comprises a non-tilted ion implantation process.
11 . The method of claim 1 , wherein the non-conformal cladding liner is deposited by a physical vapor deposition process.
12 . The method of claim 1 , wherein:
the non-conformal cladding liner is deposited by a plasma-enhanced chemical vapor deposition process; and
the non-conformal cladding liner comprises a horizontally extending portion that overlies a horizontal top surface of the etch mask material layer, and a vertically extending portion which is thinner than the horizontally extending portion.
13 . The method of claim 12 , wherein:
the step of implanting ions implants the ions of the dopant atoms into outer portion of the non-conformal cladding liner to form an implanted cladding liner sublayer and an inner unimplanted cladding liner sublayer; and
the implanted cladding liner sublayer provides a higher etch resistance relative to the lower portions of the alternating stack than the unimplanted cladding liner sublayer.
14 . The method of claim 1 , wherein the non-conformal cladding liner comprises an electrically conductive material.
15 . The method of claim 1 , wherein the non-conformal cladding liner comprises diamond-like carbon or silicon carbide.
16 . The method of claim 1 , wherein the non-conformal cladding liner comprises a dielectric metal oxide material having a dielectric constant greater than 7.9.
17 . The method of claim 1 , wherein the etch mask material comprises a carbon-based material including carbon atoms at an atomic percentage greater than 95%.
18 . The method of claim 1 , wherein each of the first anisotropic etch process and the second anisotropic etch process comprise respective reactive ion etch processes.
19 . The method of claim 1 , wherein:
the first material layers comprise silicon oxide layers; and
the second material layers comprise silicon nitride layers.
20 . The method of claim 19 , further comprising:
forming a memory opening fill structure comprising a vertical semiconductor channel and a memory film in the via opening; and
replacing the silicon nitride layers with electrically conductive word line layers.