Formation of silicon-containing thin films
Methods for depositing silicon-containing thin films on a substrate in a reaction space are provided. The methods can include at least one plasma enhanced atomic layer deposition (PEALD) cycle including one or more deposition cycles including contacting the substrate with a silicon precursor and a second reactant that does not include oxygen. In some embodiments the methods a deposition cycle can also including contacting the substrate with a carbon precursor.
1. A method of forming a silicon-containing thin film on a substrate in a reaction space by a plasma enhanced atomic layer deposition (PEALD) process, wherein the PEALD process comprises two or more deposition cycles comprising:
contacting a surface of the substrate with a vapor phase silicon precursor comprising a siloxane;
contacting the substrate with at least one reactive species generated by plasma formed from a second reactant comprising hydrogen, wherein the second reactant does not comprise oxygen.
2. The method of claim 1 , wherein the silicon-containing film comprises silicon oxycarbide (SiOC).
3. The method of claim 1 , wherein the silicon-containing film comprises silicon oxycarbonitride (SiOCN).
4. The method of claim 1 , wherein the silicon precursor comprises dichloro-tetraisoprpyldisiloxane (TIPDSiCl 2 ).
5. The method of claim 1 , wherein the silicon precursor comprises a malonate compound.
6. The method of claim 1 , wherein the second reactant comprises H 2.
7. The method of claim 6 , wherein the second reactant further comprises N 2.
8. The method of claim 1 , wherein the second reactant comprises NH 3.
9. The method of claim 1 , wherein the second reactant comprises a noble gas.
10. The method of claim 1 , wherein the silicon-containing film is deposited on a three-dimensional structure on the substrate.
11. The method of claim 5 , wherein the silicon precursor comprises bis(dimethyldichlorosilyl) malonate.
12. The method of claim 5 , wherein the silicon precursor comprises bis(trimethylsilyl) malonate.
13. The method of claim 1 , further comprising contacting the substrate with a vapor phase carbon precursor in the deposition cycle.
14. The method of claim 13 , wherein the substrate is contacted with the vapor phase carbon precursor before the substrate is contacted with at least one reactive species generated by plasma formed from a second reactant.
15. The method of claim 13 , wherein the substrate is contacted with the vapor phase carbon precursor after the substrate is contacted with at least one reactive species generated by plasma formed from a second reactant.
16. The method of claim 15 , further comprising contacting the substrate with at least one reactive species generated by plasma formed from a second reactant comprising hydrogen after contacting the substrate with the carbon precursor, wherein the second reactant does not comprise oxygen.
17. A method for depositing a silicon-containing thin film on a substrate in a reaction space comprising repeating a deposition cycle two or more times, wherein the deposition cycle comprise:
contacting a surface of the substrate with a vapor phase silicon precursor comprising two silicon atoms connected by an oxygen atom;
removing excess silicon precursor and reaction byproducts, if any;
contacting the surface of the substrate with a vapor phase carbon precursor;
removing excess carbon precursor and reaction byproducts, if any;
contacting a surface of the substrate with a second reactant comprising reactive hydrogen species; and
removing excess second reactant and reaction byproducts, if any.
18. The method of claim 17 , wherein the silicon precursor comprises TiPDSiCl 2.
19. The method of claim 17 , wherein the silicon precursor comprises bis(trimethylsilyl) malonate or bis(dimethyldichlorosilyl) malonate.
20. The method of claim 17 , wherein the carbon precursor comprises an amine.
21. The method of claim 20 , wherein the carbon precursor comprises ethylene diamine.