Thin film deposition apparatus
A reaction chamber includes a reactor wall, a susceptor contacting the reactor wall to define a reaction space and a gas flow control device and a showerhead member stacked between the reactor wall and the susceptor. The showerhead member includes a gas channel and a showerhead. Penetration holes are formed through a protruding lateral portion of the gas flow control device, and the reactor wall and a lateral portion of the showerhead member are spaced apart from each other to form a gas discharge path. Gas remaining in the gas discharge path is discharged through the penetration holes and a gas outlet formed in an upper portion of the reactor wall. The reaction chamber provides a reaction space and the gas discharge path from which unnecessary regions are removed to rapidly change gases from one to another, and thus atomic layer deposition may be performed with high efficiency and productivity.
1. A showerhead assembly comprising:
a gas flow control device comprising:
a plate comprising a gas inlet port in a center of the plate; and
a sidewall protruding from the plate and comprising a plurality of holes formed therethrough; and
a showerhead member comprising:
a showerhead connected to the gas inlet port from a bottom side of the plate; and
a gas channel between the gas inlet port and the showerhead,
wherein the gas inlet port has a diameter larger than each of diameters of the plurality of holes,
wherein a gas flow path is formed between the gas channel and the showerhead, and
wherein the showerhead assembly further comprises a gas inlet path connecting the gas inlet port of the gas flow control device to the gas flow path.
2. The showerhead assembly of claim 1 , wherein the gas channel is connected to the showerhead by mechanical connectors.
3. The showerhead assembly of claim 2 , wherein a fixing hole is formed through the plate to connect the gas flow control device and the showerhead member.
4. The showerhead assembly of claim 3 , wherein the fixing hole is disposed between the sidewall and the gas inlet port.
5. The showerhead assembly of claim 4 , further comprising a sealing member between the gas flow control device and the gas channel.
6. The showerhead assembly of claim 4 , wherein the gas flow control device further comprises at least one screw hole and at least one radio frequency (RF) rod hole that are formed through the plate, and
the gas flow control device and the gas channel are mechanically connected to each other by connectors provided in the at least one screw hole.
7. The showerhead assembly of claim 1 , wherein the gas channel extends in a first direction, and wherein the gas flow path extends in a second direction crossing the first direction.
8. A semiconductor manufacturing apparatus comprising:
a reactor wall;
a gas outlet at an upper portion of the reactor wall;
a plate connected to the reactor wall and comprising a gas inlet port in a center of the plate;
a sidewall protruding from the plate and comprising a plurality of holes formed therethrough; and
a showerhead member connected to the gas inlet port from a bottom side of the plate,
wherein the gas inlet port is formed through the plate, and a gas discharge path is formed in a region between the showerhead member and the reactor wall and a region between the plate and the reactor wall,
wherein the gas inlet port has a diameter larger than each of diameters of the plurality of holes,
wherein a space concave from the sidewall is formed by the plate and the sidewall, and
wherein the space is communicated with the gas outlet.
9. The semiconductor manufacturing apparatus of claim 8 , wherein a gas discharge path space is defined from outside of the showerhead member and the plate to the gas outlet through the plurality of holes.
10. The semiconductor manufacturing apparatus of claim 8 , wherein the plate comprises an insulative material.
11. The semiconductor manufacturing apparatus of claim 8 , wherein the gas outlet and the gas inlet port are asymmetrically arranged,
the plurality of holes comprise first holes and second holes, and
at least one of a size of the first holes, a shape of the first holes, and a distance between the first holes is different from that of the second holes.
12. The semiconductor manufacturing apparatus of claim 8 , wherein the plurality of holes comprise first holes arranged within a first distance from a gas outlet and second holes distant from the gas outlet by more than the first distance, and
the first holes are smaller than the second holes or are arranged at intervals greater than intervals between the second holes.
13. The semiconductor manufacturing apparatus of claim 8 , further comprising:
a top lid;
a chamber housing the plate, the sidewall, and the showerhead member; and
a susceptor disposed under the showerhead member,
wherein reaction gas injected form the showerhead member toward the susceptor is discharged through the gas discharge path formed between the showerhead member and the reactor wall, the plurality of holes, and the gas outlet.
14. The semiconductor manufacturing apparatus of claim 13 , further comprising a sealing member between the chamber and the sidewall.
15. The semiconductor manufacturing apparatus of claim 13 , further comprising a sealing member between the plate and a gas channel, wherein the showerhead member comprises the gas channel and a showerhead.
16. The semiconductor manufacturing apparatus of claim 15 , further comprising a gas flow path between the gas channel and the showerhead.
17. The semiconductor manufacturing apparatus of claim 13 , wherein the top lid comprises a heating element.
18. The semiconductor manufacturing apparatus of claim 8 , wherein the space is disposed directly below the gas outlet.