Semiconductor device
Provided is a semiconductor device having transistor and diode sections. The semiconductor device comprises: a gate metal layer provided above the upper surface of a semiconductor substrate; an emitter electrode provided above the upper surface of the semiconductor substrate; a first conductivity-type emitter region provided on the semiconductor substrate upper surface side in the transistor section; a gate trench section, which is provided on the semiconductor substrate upper surface side in the transistor section, is electrically connected to the gate metal layer, and is in contact with the emitter region; an emitter trench section, which is provided on the semiconductor substrate upper surface side in the diode section, and is electrically connected to the emitter electrode; and a dummy trench section, which is provided on the semiconductor substrate upper surface side, is electrically connected to the gate metal layer, and is not in contact with the emitter region.
1 . A semiconductor device having a first trench portion repetitive region and a second trench portion repetitive region, the semiconductor device comprising:
a gate metal layer provided above an upper surface of a semiconductor substrate;
an emitter electrode provided above the upper surface of the semiconductor substrate;
a first conductivity-type emitter region provided on an upper surface side of the semiconductor substrate at least in the first trench portion repetitive region;
one or more gate trench sections provided on the upper surface side of the semiconductor substrate at least in the first trench portion repetitive region, electrically connected to the gate metal layer and being in contact with the emitter region;
one or more emitter trench sections provided on the upper surface side of the semiconductor substrate in the first trench portion repetitive region and the second trench portion repetitive region and electrically connected to the emitter electrode; and
one or more dummy trench sections provided on the upper surface side of the semiconductor substrate, electrically connected to the gate metal layer and being not in contact with the emitter region.
2 . The semiconductor device according to claim 1 , wherein
each of the gate trench section, the emitter trench section and the dummy trench section includes a trench structure, and
the trench structure includes a trench formed on the upper surface side of the semiconductor substrate; an insulating film formed to cover an inner wall of the trench; and a conductive material provided at an inner side of the insulating film.
3 . The semiconductor device according to claim 2 , wherein
a device structure of the first trench portion repetitive region is different from that of the second trench portion repetitive region.
4 . The semiconductor device according to claim 2 , wherein
the first trench portion repetitive region is a region in which the trench structure is repeated in a first pattern, and
the second trench portion repetitive region is a region in which the trench structure is repeated in a second pattern.
5 . The semiconductor device according to claim 4 , wherein
the first pattern is different from the second pattern in at least one of the trench sections.
6 . The semiconductor device according to claim 4 , wherein
the emitter trench section is provided on each side of the gate trench section in an alignment direction of the trench structure in the first pattern.
7 . The semiconductor device according to claim 6 , wherein
two of the emitter trench sections are arranged on each side of the gate trench section in the alignment direction of the trench structure in the first pattern.
8 . The semiconductor device according to claim 4 , wherein
the trench emitter section is repeatedly arranged in an alignment direction in the second pattern.
9 . The semiconductor device according to claim 4 , wherein
a number of the gate trench section is identical to a number of the emitter trench section in the first pattern.
10 . The semiconductor device according to claim 4 , wherein
a number of the gate trench section is less than a number of the emitter trench section in the first pattern.
11 . The semiconductor device according to claim 2 , wherein
the first trench portion repetitive region is a region in which the trench structure is repeated in a first period, and
the second trench portion repetitive region is a region in which the trench structure is repeated in a second period.
12 . The semiconductor device according to claim 2 , further comprising: a dummy trench mesa section positioned between two of the dummy trench sections.
13 . The semiconductor device according to claim 12 , wherein
the dummy trench mesa section is positioned between the first trench portion repetitive region and the second trench portion repetitive region.
14 . The semiconductor device according to claim 13 , further comprising:
an interlayer dielectric film provided above the upper surface of the semiconductor substrate; and
a contact holes for electrically interconnecting the emitter electrode and the semiconductor substrate; wherein
an upper surface of the dummy trench mesa section is covered by the interlayer dielectric film in a cross section of the trench section in an alignment direction passing the emitter region.
15 . The semiconductor device according to claim 1 , wherein
the dummy trench section is provided between the first trench portion repetitive region and the second trench portion repetitive region.
16 . The semiconductor device according to claim 1 , wherein
the dummy trench section is provided in the first trench portion repetitive region or in the second trench portion repetitive region.
17 . The semiconductor device according to claim 1 , further comprising:
an edge termination region; and
an edge neighboring region adjacent to the edge termination region, wherein
the edge neighboring region is adjacent to the first trench portion repetitive region, and
the dummy trench section is provided in the edge neighboring region.
18 . The semiconductor device according to claim 1 , wherein
when a number of the gate trench section is denoted as G and a number of the dummy trench section is denoted as D, a relationship of 0.01<D/(D+G)<0.2 is satisfied.
19 . The semiconductor device according to claim 1 , wherein
the gate trench section, the emitter trench section and the dummy trench section are aligned in a preset alignment direction, and
a width of the second trench portion repetitive region in the alignment direction is greater than a width of the first trench portion repetitive region in the alignment direction.
20 . The semiconductor device according to claim 1 , further comprising:
a first plug for electrically interconnecting the gate trench section and the gate metal layer in the first trench portion repetitive region,
wherein the first plug includes tungsten.
21 . The semiconductor device according to claim 1 , further comprising:
a second plug for electrically interconnecting the emitter trench section and the emitter electrode in the second trench portion repetitive region,
wherein the second plug includes tungsten.
22 . The semiconductor device according to claim 5 , wherein
the emitter trench section is arranged on each side of the gate trench section in an alignment direction of the trench section in the first pattern.
23 . The semiconductor device according to claim 22 , wherein
two of the emitter trench sections are arranged on each side of the gate trench section in an alignment direction of the trench section in the first pattern.
24 . The semiconductor device according to claim 5 , wherein
the emitter trench section is repeatedly arranged in an alignment direction in the second pattern.
25 . The semiconductor device according to claim 5 , wherein
a number of the gate trench section is identical to a number of the emitter trench section in the first pattern.
26 . The semiconductor device according to claim 5 , wherein
a number of the gate trench section is less than a number of the emitter trench section in the first pattern.
27 . The semiconductor device according to claim 3 , wherein
the first trench portion repetitive region is a region in which the trench structure is repeated in a first pattern, and
the second trench portion repetitive region is a region in which the trench structure is repeated in a second pattern.
28 . The semiconductor device according to claim 3 , wherein
the first trench portion repetitive region is a region in which the trench structure is repeated in a first period, and
the second trench portion repetitive region is a region in which the trench structure is repeated in a second period.
29 . The semiconductor device according to claim 1 , wherein
the semiconductor device includes a drift region of the first conductivity type,
each of the one or more dummy trench sections includes two extension parts,
the emitter electrode is in electrical contact with a contact region between the two extension parts of each of the one or more dummy trench sections,
the contact region is of a second conductivity type that is opposite the first conductivity type, and
the upper surface of the semiconductor substrate between the two extension parts of each of the one or more dummy trench sections is devoid of the emitter region.