Patent Assignment
Reel/Frame 012454/0436
Merger
Recorded: 2002-01-18
Pages: 6
Assignor
MATSUSHITA ELECTRONICS CORPORATION
Executed: 2001-04-04
Assignee
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
1-3-7, SHIROMI, CHUO-KU, MATSUSHITA IMP BLD., 19TH FLOOR, OSAKA 540-6319, JAPAN
Covered Properties
(64)
Liquid Phase Oxidation of Alcohols to Prepare Carboxylic Acids
Patent:
5,166,424 →
Application:
07/810,713 →
Photodetector and a Method for the Fabrication Thereof
Patent:
5,721,447 →
Application:
08/628,424 →
Method of Manufacturing Capacitor Included in Semiconductor Device and the Capacitor Thereof
Patent:
6,143,597 →
Application:
08/678,866 →
Apparatus and Method for Extracting Circuit, System and Method for Generating Information for Simulation, and Netlist
Patent:
6,219,630 →
Application:
08/758,868 →
Electronic Component, Method for Making the Same, and Lead Frame and Mold Assembly for Use Therein
Patent:
5,977,613 →
Application:
08/811,606 →
Semiconductor Laser Apparatus
Patent:
6,084,895 →
Application:
08/904,304 →
Physical Quantity Distribution Sensor and Method for Driving the Same
Patent:
6,469,740 →
Application:
09/017,215 →
Process for Fabrication of a Dram Cell Having a Stacked Capacitor
Patent:
6,110,775 →
Application:
09/018,181 →
Method of Manufacturing a Resistor in a Semiconductor Device
Patent:
6,245,628 →
Application:
09/031,039 →
Lead-Frame Package with Shield Means Between Signal Terminal Electrodes
Patent:
6,166,429 →
Application:
09/033,240 →
Physical Quantity Distribution Sensor, Method of Driving Said Sensor and Method of Producing Said Sensor
Patent:
6,512,543 →
Application:
09/038,903 →
Semiconductor Device and Method for Producing the Same
Patent:
6,165,825 →
Application:
09/047,353 →
Method of Forming Gallium Nitride Crystal
Patent:
6,139,628 →
Application:
09/056,622 →
Method of Forming Gallium Nitride Crystal
Patent:
6,168,659 →
Application:
09/057,476 →
A Semiconductor Device Having a Passivation Layer Which Minimizes Diffusion of Hydrogen into a Dielectric Layer
Patent:
6,169,304 →
Application:
09/071,534 →
A Semiconductor Device Having a Capacitor Exhibiting Improved Moisture Resistance
Patent:
6,333,528 →
Application:
09/071,795 →
Method for Fabricating Semiconductor Device
Patent:
6,150,248 →
Application:
09/102,383 →
Method for Manufacturing Resin-Molded Semiconductor Device
Patent:
6,126,885 →
Application:
09/105,211 →
Semiconductor Device and Method of Manufacturing the Same
Patent:
6,232,179 →
Application:
09/105,213 →
Method of Manufacturing Electronic Device Using Phase-Shifting Mask with Multiple Phase-Shift Regions
Patent:
6,114,095 →
Application:
09/107,443 →
Method for Wafer Polishing and Method for Polishing Pad Dressing
Patent:
6,180,423 →
Application:
09/108,323 →
Method of Manufacturing Semiconductor Device
Patent:
6,100,170 →
Application:
09/110,942 →
Method of Producing Multilayer Wiring Device with Offset Axises of Upper and Lower Plugs
Patent:
6,197,685 →
Application:
09/113,370 →
A Semiconductor Capacitive Device Having Improved Anti-Duffusion Properties and a Method of Making the Same
Patent:
6,239,462 →
Application:
09/120,893 →
Amplifying Solid-State Imaging Device, Method for Driving the Same and Physical Quantity Distribution Sensing Semiconductor Device
Patent:
6,798,452 →
Application:
09/122,589 →
Cubic Nitride Semiconductor Device and Fabrication Method of the Same
Patent:
6,197,441 →
Application:
09/124,889 →
Lead Frame for Use with an Rf Powered Semiconductor
Patent:
6,208,023 →
Application:
09/126,278 →
Method of Polishing Semiconductor Wafer
Patent:
6,291,350 →
Application:
09/127,819 →
Method for Making Semiconductor Device Containing Low Carbon Film for Interconnect Structures
Patent:
6,333,255 →
Application:
09/137,150 →
Apparatus and Method for Chemical/Mechanical Polishing
Patent:
6,191,038 →
Application:
09/145,126 →
Apparatus and Method for Fabricating Semiconductor Device
Image Recognition Method
Patent:
6,236,749 →
Application:
09/147,592 →
Method and Apparatus for Lifetime Prediction of Dielectric Breakdown
Patent:
6,326,792 →
Application:
09/154,026 →
Capacitor for Integrated Circuit and Its Fabrication Method
Patent:
6,214,660 →
Application:
09/177,620 →
Semiconductor Device Having Multilevel Interconnection Structure and Method for Fabricating the Same
Patent:
6,242,336 →
Application:
09/186,067 →
Apparatus and Method for Plasma Etching
Patent:
6,274,502 →
Application:
09/201,826 →
Nonvolatile Semiconductor Memory Device Comprising a Memory Transistor, a Select Transistor and an Intermediate Diffusion Layer
Patent:
6,169,307 →
Application:
09/206,560 →
Method of Manufacturing Semiconductor Device
Method of Evaluating Semiconductor Layer, Method of Manufacturing Semiconductor Device, and Storage Medium
Patent:
6,128,084 →
Application:
09/214,826 →
Fabrication Method of Capacitor for Integrated Circuit
Patent:
6,204,111 →
Application:
09/238,157 →
Solid State Imaging Apparatus and Method of Driving the Same
Patent:
6,630,957 →
Application:
09/241,421 →
Lead Frame Method for Manufacturing the Frame Resin - Molded Semiconductor Device and Method for Manufacturing the Device
Patent:
6,166,430 →
Application:
09/244,073 →
Flat Panel Solid State Light Source
Patent:
6,329,676 →
Application:
09/259,607 →
Semiconductor Structures Using a Group Iii-Nitride Quaternary Material System with Reduced Phase Separation and Method of Fabrication
Patent:
6,521,917 →
Application:
09/276,886 →
Nitride Semiconductor Laser Device
Patent:
6,249,534 →
Application:
09/285,648 →
Semiconductor Device
Patent:
6,320,229 →
Application:
09/301,354 →
Plastic Encapsulated Semiconductor Device and Method of Manufacturing the Same
Patent:
6,130,115 →
Application:
09/332,970 →
Lead Frame, Method of Manufacturing Lead Frame, Semiconductor Device and Method of Manufacturing Semiconductor Device
Patent:
6,225,146 →
Application:
09/361,404 →
Semiconductor Structures Using a Group Iii-Nitride Quaternary Material System with Reduced Phase Separation and Method of Fabrication
Patent:
6,229,150 →
Application:
09/365,105 →
Electronic Component, Method for Making the Same, and Lead Frame and Mold Assembly for Use Therein
Patent:
6,187,614 →
Application:
09/379,623 →
Semiconductor Structures Using a Group Iii-Nitride Material System with Reduced Phase Seperation and Method of Fabrication
Patent:
6,903,364 →
Application:
09/442,077 →
Semiconductor Structures Using a Group Iii-Nitride Quaternary Material System with Reduced Phase Separation and Method of Fabrication
Patent:
6,472,679 →
Application:
09/476,017 →
Semiconductor Structures Using a Group Iii-Nitride Quaternary Material System with Reduced Phase Separation and Method of Fabrication
Patent:
6,472,680 →
Application:
09/477,791 →
Lean Frame, Resin-Molded Semiconductor Device, and Method for Manufacturing the Same
Patent:
6,455,348 →
Application:
09/521,670 →
Semiconductor memory
Patent:
6,275,434 →
Application:
09/523,205 →
Semiconductor Substrate, Semiconductor Device and Method of Manufacturing the Same
Patent:
6,593,159 →
Application:
09/532,063 →
Semiconductor device having improved planarization properties and a method for forming the same
Application:
09/536,618 →
Semiconductor device having capacitor and manufacturing method thereof
Patent:
6,294,438 →
Application:
09/589,520 →
Method for manufacturing resin-molded semiconductor device
Patent:
6,258,314 →
Application:
09/597,908 →
Phase-shifting mask with multiple phase-shift regions
Patent:
6,280,888 →
Application:
09/608,168 →
Nonvolatile semiconductor memory device and method for driving the same
Patent:
6,377,490 →
Application:
09/677,844 →
Capacitance Element and Method of Manufacturing the Same
Patent:
6,562,677 →
Application:
09/689,840 →
Apparatus and Method for Chemical/Mechanical Polishing
Method for Wafer Polishing and Method for Polishing-Pad Dressing
Related Assignments
(12)
Other recorded transfers of the patents in this record — the chain of ownership.
Assignment of Assignor's Interest
Jul 12, 1996
From: MATSUDA, AKIHIRO; NAGANO, YOSHIHISA; NASU, TORU; ARITA, KOJI
To: MATSUSHITA ELECTRONICS CORPORATION
Reel/Frame 008108/0823 →
Change of Name
Mar 23, 2009
From: MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
To: PANASONIC CORPORATION
Reel/Frame 022434/0348 →
Change of Name
Jan 8, 2014
From: MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
To: PANASONIC CORPORATION
Reel/Frame 031947/0358 →
Lien
Jan 13, 2014
From: COLLABO INNOVATIONS, INC.
To: PANASONIC CORPORATION
Reel/Frame 031997/0445 →
Assignment of Assignor's Interest
May 5, 2014
From: PANASONIC CORPORATION (FORMERLY KNOWN AS MATSUSHITA ELECTRIC INDUSTRIAL, CO., LTD.)
To: RPX CORPORATION
Reel/Frame 032826/0585 →
Assignment of Assignor's Interest
May 26, 2014
From: PANASONIC CORPORATION
To: COLLABO INNOVATIONS, INC.
Reel/Frame 033021/0806 →
Change of Name
Sep 19, 2014
From: MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
To: PANASONIC CORPORATION
Reel/Frame 033777/0873 →
Assignment of Assignor's Interest
Jul 7, 2015
From: PANASONIC CORPORATION
To: PANNOVA SEMIC, LLC
Reel/Frame 036065/0273 →
Security Agreement
Mar 9, 2016
From: RPX CORPORATION; RPX CLEARINGHOUSE LLC
To: JPMORGAN CHASE BANK, N.A., AS COLLATERAL AGENT
Reel/Frame 038041/0001 →
Release (Reel 038041 / Frame 0001)
Jan 2, 2018
From: JPMORGAN CHASE BANK, N.A.
To: RPX CORPORATION; RPX CLEARINGHOUSE LLC
Reel/Frame 044970/0030 →
Security Interest
Jun 29, 2018
From: RPX CORPORATION
To: JEFFERIES FINANCE LLC
Reel/Frame 046486/0433 →
Release of Security Interest
Oct 26, 2020
From: JEFFERIES FINANCE LLC
To: RPX CORPORATION
Reel/Frame 054486/0422 →