Patent Assignment
Reel/Frame 049629/0240
Change of Name
Recorded: 2019-06-28
Pages: 3
Assignor
POWERCHIP SEMICONDUCTOR CORP.
Executed: 2010-08-09
Assignee
POWERCHIP TECHNOLOGY CORPORATION
NO. 12, LI-HSIN ROAD 1, HSINCHU SCIENCE PARK,, HSINCHU, TAIWAN
Covered Properties
(20)
Method of Manufacturing a Dual Bit Flash Memory
Method of Manufacturing Photodiode
[Split-Gate Flash Memory Structure and Method of Manufacture]
Support Stand
Patent:
6,914,732 →
Application:
10/710,853 →
Method of Managing Wafer Defects
Method of Manufacturing Non-Volatile Memory Cell
Flash Memory Cell and Fabricating Method Thereof
Silicon-On-Insulator Device Structure
Operational Model for Simulating Manufacture Flow and Simulating Method Thereof
Non-Volatile Memory, Non-Volatile Memory Array and Manufacturing Method Thereof
Method of Fabricating a Flash Memory Cell
Flash Memory Cell and Fabricating Method Thereof
Method of Defect Inspection
Flash Memory Cell
Method of Manufacturing Semiconductor Device
Split Gate Flash Memory Cell and Manufacturing Method Thereof
Method for Forming a Titanium Nitride Layer
Method of Fabricating a Photosensitive Structure
Capacity Management System and Method
Method of Forming Si Tip by Single Etching Process and Its Application for Forming Floating Gate
Related Assignments
(4)
Other recorded transfers of the patents in this record — the chain of ownership.
Assignment of Assignor's Interest
Jul 14, 2019
From: POWERCHIP TECHNOLOGY CORPORATION
To: POWERCHIP SEMICONDUCTOR MANUFACTURING CORPORATION
Reel/Frame 049746/0981 →
Assignment of Assignor's Interest
Jul 14, 2019
From: POWERCHIP TECHNOLOGY CORPORATION
To: POWERCHIP SEMICONDUCTOR MANUFACTURING CORPORATION
Reel/Frame 049747/0017 →
Assignment of Assignor's Interest
Apr 8, 2020
From: POWERCHIP SEMICONDUCTOR MANUFACTURING CORPORATION
To: POWERCHIP TECHNOLOGY CORPORATION
Reel/Frame 052337/0735 →
Assignment of Assignor's Interest
Sep 7, 2020
From: POWERCHIP TECHNOLOGY CORPORATION
To: NEXCHIP SEMICONDUCTOR CORPORATION
Reel/Frame 053704/0522 →