Lithography patterning with a gas phase resist
Disclosed is a method for lithography patterning. The method includes providing a substrate, forming a deposition enhancement layer (DEL) over the substrate, and flowing an organic gas near a surface of the DEL. During the flowing of the organic gas, the method further includes irradiating the DEL and the organic gas with a patterned radiation. Elements of the organic gas polymerize upon the patterned radiation, thereby forming a resist pattern over the DEL. The method further includes etching the DEL with the resist pattern as an etch mask, thereby forming a patterned DEL.
1. A method for lithography patterning, comprising:
providing a substrate;
forming a deposition enhancement layer (DEL) over the substrate;
flowing an organic gas near a surface of the DEL;
during the flowing of the organic gas, irradiating the DEL and the organic gas with a patterned radiation, wherein elements of the organic gas polymerize upon the patterned radiation, thereby forming a resist pattern over the DEL; and
etching the DEL with the resist pattern as an etch mask, thereby forming a patterned DEL.
2. The method of claim 1 , wherein the DEL comprises Ru.
3. The method of claim 1 , wherein the DEL comprises one of: Ce, La, Sb, Pb, Hf, Zr, Ti, Cr, W, Mo, Fe, Os, Co, Rh, Jr, Ni, Pd, Pt, Cu, Ag, Au, Zn, Cd, Al, Ga, Tl, Ge, Sn, and Bi.
4. The method of claim 1 , wherein the DEL comprises a polymer having a functional group selected from a group consisting of: —I, —Br, and —Cl.
5. The method of claim 1 , wherein the DEL comprises a polymer having a functional group selected from a group consisting of: —NH 2 , —COOH, —OH, —SH, —N 3 , and —S(═O)—.
6. The method of claim 1 , wherein the DEL comprises a polymer having a functional group selected from a group consisting of: alkene, alkyne, imine, ether, vinyl ether, acetal, hemiacetal, ester, aldehyde, ketone, amide, sulfone, acetic acid, cyanide, and allene.
7. The method of claim 1 , wherein the DEL comprises an oxide of a metal and the metal is selected from a group consisting of: Ce, La, Sb, Pb, Hf, Zr, Ti, Cr, W, Mo, Fe, Ru, Os, Co, Rh, Jr, Ni, Pd, Pt, Cu, Ag, Au, Zn, Cd, Al, Ga, Tl, Ge, Sn, and Bi.
8. The method of claim 1 , wherein the DEL comprises a metal complex having a metal selected from a group consisting of: Ce, La, Sb, Pb, Hf, Zr, Ti, Cr, W, Mo, Fe, Ru, Os, Co, Rh, Jr, Ni, Pd, Pt, Cu, Ag, Au, Zn, Cd, Al, Ga, Tl, Ge, Sn, and Bi.
9. The method of claim 1 , wherein the organic gas comprises an organic molecule having one or more cross-linkable groups.
10. The method of claim 9 , wherein the one or more cross-linkable groups include a C 3 -C 20 alkyl group having at least one light-sensitive functional group.
11. The method of claim 10 , wherein the light-sensitive functional group is selected from a group consisting of epoxy, azo compounds, alkyl halide, imine, alkene, alkyne, peroxide, ketone, aldehyde, allene, aromatic groups, and heterocyclic groups.
12. The method of claim 11 , wherein the aromatic groups comprise phenyl, napthlenyl, phenanthrenyl, anthracenyl, phenalynyl, and other aromatic derivatives having one to five-membered rings.
13. The method of claim 1 , wherein the organic gas comprises an organic molecule that has a functional group selected from a group consisting of: —I, —Br, and —Cl.
14. The method of claim 1 , wherein the organic gas comprises an organic molecule that has a functional group selected from a group consisting of: —NH 2 , —COOH, —OH, —SH, —N 3 , and —S(═O)—.
15. The method of claim 1 , wherein the organic gas comprises an organic molecule that has a functional group selected from a group consisting of: alkene, alkyne, imine, ether, vinyl ether, acetal, hemiacetal, ester, aldehyde, ketone, amide, sulfone, acetic acid, cyanide, and allene.
16. The method of claim 1 , wherein the organic gas comprises a metal complex, wherein the metal complex has metal atoms of: Ce, La, Sb, Bi, Pb, Hf, Zr, Ti, Cr, W, Mo, Fe, Ru, Os, Co, Rh, Jr, Ni, Pd, Pt, Cu, Ag, Au, Zn, Cd, Al, Ga, Tl, Ge, or Sn.
17. The method of claim 16 , wherein a ligand of the metal complex has a functional group selected from a group consisting of: —I, —Br, —Cl, —NH 2 , —COOH, —OH, —SH, —N 3 , —S(═O)—, alkene, alkyne, imine, ether, vinyl ether, acetal, hemiacetal, ester, aldehyde, ketone, amide, sulfone, acetic acid, cyanide, and allene.
18. The method of claim 1 , wherein the patterned radiation is a patterned EUV beam or a patterned e-beam.
19. A method, comprising:
directing a patterned radiation towards a surface of a deposition enhancement layer (DEL) over a substrate, wherein the DEL comprises a metal, an oxide of the metal, or a metal complex having atoms of the metal, the metal being one of Ru, Ce, La, Sb, Pb, Hf, Zr, Ti, Cr, W, Mo, Fe, Os, Co, Rh, Ir, Ni, Pd, Pt, Cu, Ag, Au, Zn, Cd, Al, Ga, Tl, Ge, Sn, and Bi;
supplying an organic gas near the surface of the DEL, wherein elements of the organic gas polymerize upon the patterned radiation, thereby forming a resist pattern over the surface of the DEL;
moving the substrate and the DEL relative to the patterned radiation such that the resist pattern is formed across an area of the DEL;
stopping the supplying of the organic gas when the resist pattern is formed near an edge of the DEL; and
etching the DEL using the resist pattern as an etch mask.
20. A method for lithography patterning, comprising:
providing a substrate;
forming a deposition enhancement layer (DEL) over the substrate, wherein the DEL comprises a polymer having a functional group selected from a group consisting of —I, —Br, —Cl, —NH 2 , —COOH, —OH, —SH, —N 3 , —S(═O)—, alkene, alkyne, imine, ether, vinyl ether, acetal, hemiacetal, ester, aldehyde, ketone, amide, sulfone, acetic acid, cyanide, and allene;
flowing an organic gas near a surface of the DEL, the organic gas including a C 3 -C 20 alkyl cross-linking group;
during the flowing of the organic gas, irradiating the DEL and the organic gas with a patterned radiation, wherein elements of the organic gas polymerize upon the patterned radiation, thereby forming a resist pattern over the DEL; and
patterning the DEL using the resist pattern.