Structure comprising at least a first element bonded to a carrier having a closed metallic channel waveguide formed therein
A structure can include a first element and a carrier bonded to the first element along an interface. A waveguide can be defined at least in part along the interface between the first element and the carrier. The waveguide can comprise an effectively closed metallic channel and a dielectric material within the effectively closed metallic channel, as viewed from a side cross-section of the structure. Various millimeter-wave or sub-terahertz components or circuit structures can also be created based on the waveguide structures disclosed herein.
1. A structure comprising:
a first element;
a carrier bonded to the first element along an interface; and
a waveguide defined at least in part along the interface between the first element and the carrier, the waveguide comprising an effectively closed metallic channel and a dielectric material within the effectively closed metallic channel as viewed from a side cross-section of the structure,
wherein first metallic features are defined in the first element and second metallic features are defined in the carrier, the first and second metallic features being bonded to one another to define the effectively closed metallic channel, and
wherein first dielectric features are defined in the first element and second dielectric features are defined in the carrier, the first and second dielectric features cooperate to define the dielectric material.
2. The structure of claim 1 , wherein the carrier comprises a semiconductor material and the first element comprises an integrated device die.
3. The structure of claim 1 , wherein the first element and the carrier are directly bonded to one another without an intervening adhesive.
4. The structure of claim 1 , wherein the waveguide is at least partially embedded in the carrier with a wall of the metallic channel exposed at an upper surface of the carrier.
5. The structure of claim 1 , wherein the effectively closed metallic channel comprises gaps between portions of the metallic channel, the gaps being smaller than a wavelength of electromagnetic radiation to be propagated along the waveguide.
6. The structure of claim 5 , wherein the gaps are less than 10% of the wavelength of the electromagnetic radiation.
7. The structure of claim 6 , further comprising a second element bonded to the carrier along a second interface and spaced laterally from the first element, the waveguide extending from the first element to the second element and being defined at least in part along the second interface between the carrier and the second element.
8. The structure of claim 7 , wherein the waveguide comprises a first waveguide portion defined by a lower surface of the first element and an upper surface of the carrier and a second waveguide portion underlying a gap between the first and second elements, wherein a height of the second waveguide portion is less than a height of the first waveguide portion.
9. The structure of claim 8 , further comprising a first port extending from the first element through the metallic channel, the first port configured to couple to a first radiating element to transmit electromagnetic radiation to, or to receive electromagnetic radiation from, the waveguide.
10. The structure of claim 7 , further comprising a third element bonded to the carrier and a second wave guide defined at least in part along a third interface, the third element spaced laterally from the first element and the second element, the second waveguide extending from the second element to the third element and being defined at least in part along the third interface between the carrier and the second element.
11. The structure of claim 1 , wherein the carrier comprises a bridge extending between an upper surface of the first element and an upper surface of a second element spaced apart from the first element, the waveguide at least partially embedded in the bridge, wherein the structure further comprises a second carrier, wherein lower surfaces of the first and second elements are bonded to the second carrier.
12. The structure of claim 1 , wherein the waveguide is shaped so as to define a device comprising at least one of a power divider, a coupler, a circulator, and a filter.
13. A structure comprising:
a semiconductor element having a waveguide at least partially embedded therein, the waveguide comprising an effectively closed metallic channel and a dielectric material within the effectively closed metallic channel as viewed from a side cross-section of the structure;
a first port extending through the effectively closed metallic channel to an exterior surface of the semiconductor element, the first port configured to couple to a radiating element to transmit electromagnetic radiation to, or to receive electromagnetic radiation from, the waveguide, wherein the first port comprises a first metallic boundary and a dielectric feature disposed within the first metallic boundary; and
a first element bonded to the semiconductor element, the first element having a second port having a second metallic boundary, the first and second metallic boundaries aligned with and bonded to one another.
14. The structure of claim 13 , wherein the waveguide is completely embedded in the semiconductor element.
15. The structure of claim 13 , further comprising a third port having a third metallic boundary and extending through the effectively closed metallic channel to the exterior surface of the semiconductor element, and a second element bonded to the semiconductor element and laterally spaced from the first element, the second element comprising a fourth port having a fourth metallic boundary, the third and fourth metallic boundaries aligned with and bonded to one another.
16. The structure of claim 13 , wherein the effectively closed metallic channel comprises a completely closed metallic channel.
17. The structure of claim 13 , wherein the effectively closed metallic channel comprises gaps between portions of the metallic channel, the gaps being smaller than a wavelength of electromagnetic radiation to be propagated along the waveguide.
18. A method of forming a structure, the method comprising:
providing a first element and a carrier, wherein the first element comprises first metallic features and first dielectric features exposed on an exterior surface of the first element and the carrier comprises second metallic features and second dielectric features exposed on an exterior surface of the carrier;
bonding the first element to the carrier along an interface to bond the first metallic features and the second metallic features and to bond the first dielectric features and the second dielectric features, the bonded first element and carrier defining a waveguide at least in part along the interface between the first element and the carrier, the waveguide comprising an effectively closed metallic channel and a dielectric material within the effectively closed metallic channel as viewed from a side cross-section of the structure.
19. The method of claim 18 , wherein bonding the first element to the carrier comprises directly bonding the first element to the carrier without an intervening adhesive.
20. A structure comprising:
a first element;
a carrier directly bonded to the first element along an interface without an intervening adhesive; and
a waveguide defined at least in part along the interface between the first element and the carrier, the waveguide comprising an effectively closed metallic channel and a dielectric material within the effectively closed metallic channel as viewed from a side cross-section of the structure,
wherein first metallic features are defined in the first element and second metallic features are defined in the carrier, the first and second metallic features being bonded to one another to define the effectively closed metallic channel, and
wherein first dielectric features are defined in the first element and second dielectric features are defined in the carrier, the first and second dielectric features being bonded to one another to define the dielectric material.
21. The structure of claim 20 , wherein the first and second metallic features are directly bonded without an intervening adhesive.
22. The structure of claim 20 , wherein the first and second dielectric features are directly bonded without an intervening adhesive.
23. The structure of claim 20 , wherein the effectively closed metallic channel comprises gaps between portions of the metallic channel, the gaps being smaller than a wavelength of electromagnetic radiation to be propagated along the waveguide.