Granted Patent B2

US 12,598,962 · App. 18/183,768 · Granted Apr 7, 2026

Inventors: Jeremy Alfred Theil (Mountain View, CA); Cyprian Emeka Uzoh (San Jose, CA); Gaius Gillman Fountain, Jr. (Youngsville, NC); Belgacem Haba (Saratoga, CA); Rajesh Katkar (Milpitas, CA)

Assignee: ADEIA SEMICONDUCTOR BONDING TECHNOLOGIES INC.

H01L24/80H01L21/0273H01L21/561H01L23/12H01L24/03H01L24/08H01L24/96H01L25/162H01L25/167H01L2224/0345H01L2224/03452H01L2224/03831H01L2224/03845H01L2224/08145H01L2224/80011H01L2224/80895H01L2224/80896H01L2224/80948H01L2224/96H01L2924/12041H01L2924/12042H01L2924/12043

Abstract

Claims (37)

1 . An element comprising:

a substrate; and

a surface layer on the substrate, the surface layer comprising:

at least one first region comprising an optically transparent and electrically insulative first material; and

at least one second region at least partially embedded in the at least one first region, the at least one second region comprising an optically transparent and electrically conductive second material, wherein the second material is selected from the group consisting of: doped and undoped metal oxides, aluminum zinc oxide, indium tin oxide, zinc oxide, zinc tin oxide, indium-doped zinc oxide, indium oxide, cadmium tin oxide, tin oxide, titanium dioxide, niobium-doped titanium dioxide, and transition metal nitrides comprising a IIIB transition metal.

2 . The element of claim 1 , wherein the surface layer is a direct hybrid bonding layer.

3 . The element of claim 1 , wherein the first material comprises a dielectric material.

4 . The element of claim 3 , wherein the dielectric material is selected from the group consisting of: semiconductor oxides, semiconductor nitrides, silicon oxide, silicon nitride, silicon oxynitride, silicon carbonitride, and silicon oxycarbonitride.

5 . An apparatus comprising:

a first substrate;

a first layer on the first substrate, the first layer comprising:

at least one first region comprising an optically transparent and electrically insulative first material; and

at least one second region at least partially embedded in the at least one first region, the at least one second region comprising an optically transparent and electrically conductive second material;

a second substrate; and

a second layer on the second substrate, the second layer directly bonded to the first layer, the second layer comprising:

at least one third region comprising an electrically insulative third material; and

at least one fourth region at least partially embedded in the at least one third region, the at least one fourth region comprising an electrically conductive fourth material, the at least one second region and the at least one fourth region providing an electrically conductive and optically transparent connection between the first substrate and the second substrate.

6 . The apparatus of claim 5 , wherein the at least one first region is directly bonded to the at least one third region and the at least one second region is directly bonded to the at least one fourth region.

7 . The apparatus of claim 6 , wherein the first material is the same as the third material.

8 . The apparatus of claim 6 , wherein the first material is different from the third material.

9 . The apparatus of claim 6 , wherein the second material is the same as the fourth material.

10 . The apparatus of claim 6 , wherein the second material is different from the fourth material.

11 . The apparatus of claim 5 , wherein the at least one third region and the at least one fourth region are optically transparent.

12 . An apparatus comprising:

a first substrate;

a first plurality of layers on the first substrate, the first plurality of layers comprising:

at least one first layer comprising an optically transparent and electrically conductive first material; and

at least one second layer over the at least one first layer, the at least one second layer comprising an optically transparent and electrically conductive second material comprising metal or polysilicon;

a second substrate; and

a second plurality of layers on the second substrate, the second plurality of layers comprising:

at least one third layer comprising an optically transparent and electrically conductive third material; and

at least one fourth layer over the at least one third layer, the at least one fourth layer comprising an optically transparent and electrically conductive fourth material comprising metal or polysilicon, the fourth material directly bonded to the second material.

13 . The apparatus of claim 12 , wherein the first material is the same as the third material.

14 . The apparatus of claim 12 , wherein the first material is different from the third material.

15 . The apparatus of claim 12 , wherein the second material is the same as the fourth material.

16 . The apparatus of claim 12 , wherein the second material is different from the fourth material.

17 . The apparatus of claim 12 , wherein the at least one second layer has a thickness of less than 50 nanometers and the at least one fourth layer has a thickness of less than 50 nanometers.

Assignments (1)

Continuity (1)

References Cited (349)